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Nanoscale thermal transport in amorphous and crystalline GeTe thin-films

Applied physics letters, 2019-07, Vol.115 (2)

2019

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Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Applied physics letters, 2020-03, Vol.116 (11)

2020

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Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition

Applied surface science, 2013-07, Vol.277, p.167-175

2013

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Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Applied physics letters, 2012-12, Vol.101 (23)

2012

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Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition

ACS omega, 2017-04, Vol.2 (4), p.1259-1264

2017

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Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

AIP advances, 2020-05, Vol.10 (5), p.055307-055307-7

2020

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Propagon boundary scattering relaxed via crystalline host on multiphase germanium telluride

Applied physics letters, 2024-04, Vol.124 (17)

2024

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Metal-Induced Gap States at a Carbon-Nanotube Intramolecular Heterojunction Observed by Scanning Tunneling Microscopy

Small (Weinheim an der Bergstrasse, Germany), 2007-02, Vol.3 (2), p.280-284

2007

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First-principles study and experimental characterization of metal incorporation in germanium telluride

Journal of applied physics, 2020-12, Vol.128 (22)

2020

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In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

ACS applied materials & interfaces, 2020-04, Vol.12 (14), p.16639-16647

2020

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Examination of the temperature dependent electronic behavior of GeTe for switching applications

Journal of applied physics, 2016-06, Vol.119 (24)

2016

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Nanopatterning of GeTe phase change films via heated-probe lithography

Nanoscale, 2017-07, Vol.9 (25), p.8815-8824

2017

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Quantum point contacts and resistive switching in Ni/NiO nanowire junctions

Applied physics letters, 2016-11, Vol.109 (20)

2016

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Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy

Nanotechnology, 2007-05, Vol.18 (21), p.215202-215202 (6)

2007

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Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

AIP advances, 2014-12, Vol.4 (12), p.127153-127153-6

2014

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First-principles study and experimental characterization of metal incorporation in germanium telluride

Journal of applied physics, 2020-12, Vol.128 (22)

2020

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GaN-based Periodic High-Q RF Acoustic Resonator with Integrated HEMT

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.17.5.1-17.5.4

2019

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Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-07, Vol.33 (4)

2015

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Crystallization Behavior of Zinc-Doped Nb2O5 Thin Films Synthesized by Atomic Layer Deposition

ACS applied electronic materials, 2022-09, Vol.4 (9), p.4280-4287

2022

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Nanopatterning of GeTe phase change films via heated-probe lithographyElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr01482a

2017-06

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Crystallization Behavior of Zinc-Doped Nb 2 O 5 Thin Films Synthesized by Atomic Layer Deposition

ACS applied electronic materials, 2022-09, Vol.4 (9), p.4280-4287

2022

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Scanning tunneling microscopic analysis of Cu(In,Ga)Se2 epitaxial layers

Journal of applied physics, 2010-02, Vol.107 (3)

2010

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Scanning tunneling microscopic analysis of Cu ( In , Ga ) Se 2 epitaxial layers

Journal of applied physics, 2010-02, Vol.107 (3), p.034906-034906-7

2010

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Atomic layer deposition of Al{sub 2}O{sub 3} on GaSb using in situ hydrogen plasma exposure

Applied physics letters, 2012-12, Vol.101 (23)

2012

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Scanning tunneling microscopic analysis of Cu(In,Ga)Se{sub 2} epitaxial layers

Journal of applied physics, 2010-02, Vol.107 (3)

2010

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Nanoscale thermal transport in amorphous and crystalline GeTe thin-films

Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Propagon boundary scattering relaxed via crystalline host on multiphase germanium telluride

Metal-Induced Gap States at a Carbon-Nanotube Intramolecular Heterojunction Observed by Scanning Tunneling Microscopy

First-principles study and experimental characterization of metal incorporation in germanium telluride

In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

Examination of the temperature dependent electronic behavior of GeTe for switching applications

Nanopatterning of GeTe phase change films via heated-probe lithography

Quantum point contacts and resistive switching in Ni/NiO nanowire junctions

Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunnelling spectroscopy

Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

First-principles study and experimental characterization of metal incorporation in germanium telluride

GaN-based Periodic High-Q RF Acoustic Resonator with Integrated HEMT

Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment

Crystallization Behavior of Zinc-Doped Nb2O5 Thin Films Synthesized by Atomic Layer Deposition

Nanopatterning of GeTe phase change films via heated-probe lithographyElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr01482a

Crystallization Behavior of Zinc-Doped Nb 2 O 5 Thin Films Synthesized by Atomic Layer Deposition

Scanning tunneling microscopic analysis of Cu(In,Ga)Se2 epitaxial layers

Scanning tunneling microscopic analysis of Cu ( In , Ga ) Se 2 epitaxial layers

Atomic layer deposition of Al{sub 2}O{sub 3} on GaSb using in situ hydrogen plasma exposure

Scanning tunneling microscopic analysis of Cu(In,Ga)Se{sub 2} epitaxial layers

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