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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2024-05, Vol.221 (10)

2024

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A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2023-12, Vol.220 (23), p.n/a

2023

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Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT

AIP advances, 2024-03, Vol.14 (3), p.035206-035206-7

2024

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A Low-Power Ring Oscillator Using Pull-Up Control Scheme Integrated by Metal-Oxide TFTs

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.4946-4951

2017

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A Low-Power High-Stability Flexible Scan Driver Integrated by IZO TFTs

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1779-1782

2016

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A New Voltage-Programmed Pixel Circuit for Enhancing the Uniformity of AMOLED Displays

IEEE electron device letters, 2011-07, Vol.32 (7), p.931-933

2011

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A New Extraction Method of Trap States in Amorphous InGaZnO Thin-Film Transistors

Journal of display technology, 2015-04, Vol.11 (4), p.325-329

2015

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Space charge limited current for bipolar flow with uniform initial velocity

Physics of plasmas, 2021-06, Vol.28 (6)

2021

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An Improvement of the Capacitance-Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.394-399

2014

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Space Charge Limited Current and Induced Particle Reflection With a Time-Varying Current Injection

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4460-4468

2022

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Simulation of Space-Charge-Limited Current for Hot Electrons With Initial Velocity in a Vacuum Diode

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3604-3610

2021

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A new drain current model for amorphous IGZO thin film transistors

European physical journal. Applied physics, 2015-04, Vol.70 (1), p.10101

2015

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Nonuniform Space Charge Limited Current for 2-D Bipolar Flow in Vacuum Diode

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6538-6545

2021

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A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors

European physical journal. Applied physics, 2015-12, Vol.72 (3), p.30102

2015

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Space-Charge-Limited Current Injection Into Free Space and Trap-Filled Solid

IEEE transactions on plasma science, 2021-07, Vol.49 (7), p.2107-2112

2021

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Manchester-encoded data transmission circuit integrated by metal–oxide TFTs suitable for 13.56 MHz radio-frequency identification tag application

IET circuits, devices & systems, 2018-11, Vol.12 (6), p.771-776

2018

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Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2017-12, Vol.31 (35), p.1750332

2017

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A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors

Chinese physics letters, 2012-09, Vol.29 (9), p.97301-1-097301-4

2012

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High-Speed Voltage-Programmed Pixel Circuit for AMOLED Displays Employing Threshold Voltage One-Time Detection Method

IEEE electron device letters, 2013-09, Vol.34 (9), p.1148-1150

2013

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An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3230-3235

2011

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A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor

Wuli xuebao, 2020-03, Vol.69 (5), p.57101

2020

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Gate capacitance model of AlGaN/GaN high electron mobility transistor

Wuli xuebao, 2021-11, Vol.70 (21), p.217301

2021

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An AC Driving Pixel Circuit Compensating for TFTs Threshold-Voltage Shift and OLED Degradation for AMOLED

Journal of display technology, 2013-07, Vol.9 (7), p.572-576

2013

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Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors

Displays, 2018-07, Vol.53, p.14-17

2018

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Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-01, Vol.39 (1)

2021

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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors

Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT

A Low-Power Ring Oscillator Using Pull-Up Control Scheme Integrated by Metal-Oxide TFTs

A Low-Power High-Stability Flexible Scan Driver Integrated by IZO TFTs

A New Voltage-Programmed Pixel Circuit for Enhancing the Uniformity of AMOLED Displays

A New Extraction Method of Trap States in Amorphous InGaZnO Thin-Film Transistors

Space charge limited current for bipolar flow with uniform initial velocity

An Improvement of the Capacitance-Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions

Space Charge Limited Current and Induced Particle Reflection With a Time-Varying Current Injection

Simulation of Space-Charge-Limited Current for Hot Electrons With Initial Velocity in a Vacuum Diode

A new drain current model for amorphous IGZO thin film transistors

Nonuniform Space Charge Limited Current for 2-D Bipolar Flow in Vacuum Diode

A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors

Space-Charge-Limited Current Injection Into Free Space and Trap-Filled Solid

Manchester-encoded data transmission circuit integrated by metal–oxide TFTs suitable for 13.56 MHz radio-frequency identification tag application

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors

High-Speed Voltage-Programmed Pixel Circuit for AMOLED Displays Employing Threshold Voltage One-Time Detection Method

An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor

Gate capacitance model of AlGaN/GaN high electron mobility transistor

An AC Driving Pixel Circuit Compensating for TFTs Threshold-Voltage Shift and OLED Degradation for AMOLED

Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors

Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric

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