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Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications

Nanoscale, 2016-08, Vol.8 (34), p.15774-15782

2016

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Suppression of 1/ f noise in near-ballistic h -BN-graphene- h- BN heterostructure field-effect transistors

Applied physics letters, 2015-07, Vol.107 (2)

2015

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Terahertz Beam Testing of Millimeter Wave Monolithic Integrated Circuits

IEEE sensors journal, 2017-09, Vol.17 (17), p.5487-5491

2017

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Low-Frequency Current Fluctuations in “Graphene-like” Exfoliated Thin-Films of Bismuth Selenide Topological Insulators

ACS nano, 2011-04, Vol.5 (4), p.2657-2663

2011

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AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches

IEEE access, 2023, Vol.11, p.125909-125917

2023

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Observation of the memory steps in graphene at elevated temperatures

Applied physics letters, 2011-05, Vol.98 (22), p.222107-222107-3

2011

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Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs

Solid-state electronics, 2002-04, Vol.46 (4), p.567-572

2002

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SiC Materials and Devices

AL, SHUR MICHAEL ET

2007

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1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors

Solid-state electronics, 2009-06, Vol.53 (6), p.626-629

2009

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1/ f Noise Characteristics of MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

IEEE electron device letters, 2015-05, Vol.36 (5), p.517-519

2015

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Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors

Japanese Journal of Applied Physics, 2007-07, Vol.46 (7R), p.4011

2007

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Effect of ultraviolet light on 1/f noise in carbon nanotube networks

Materials research bulletin, 2021-02, Vol.134, p.111093, Article 111093

2021

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Low Frequency Noise in 4H-SiC MOSFETs

Materials science forum, 2009-01, Vol.615-617, p.817-820

2009

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Temperature dependence of turn-on processes in 4H–SiC thyristors

Solid-state electronics, 2001-03, Vol.45 (3), p.453-459

2001

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Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applicationsElectronic supplementary information (ESI) available: Details of the material synthesis, device fabrication, transmission electron microscopy and diffraction. See DOI: 10.1039/c6nr03469a

2016-08

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SiC materials and devices: Volume 1

1, 2006

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Breakdown current density in h-BN-capped quasi-1D TaSe 3 metallic nanowires: prospects of interconnect applications

Nanoscale, 2016, Vol.8 (34), p.15774-15782

2016

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1/f noise in conducting channels of topological insulator materials

Physica status solidi. A, Applications and materials science, 2011-01, Vol.208 (1), p.144-146

2011

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Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor

Solid-state electronics, 2000-12, Vol.44 (12), p.2155-2159

2000

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Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors

Materials science forum, 2013-01, Vol.740-742, p.990-993

2013

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Optical Triggering of 12 kV 1 cm super(2) 4H-SiC Thyristors

Materials science forum, 2013-01, Vol.740-742, p.990-993

2013

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"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1703-1710

2001

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1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors

Solid-state electronics, 2009, Vol.53 (6), p.626-629

2009

Volltextzugriff (PDF)

1/f noise in conducting channels of topological insulator materials

Physica status solidi. A, Applications and materials science, 2011, Vol.208 (1), p.144-146

2011

Volltextzugriff (PDF)

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

Materials science forum, 2012, Vol.717-720, p.1105-1108

2012

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Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications

Suppression of 1/ f noise in near-ballistic h -BN-graphene- h- BN heterostructure field-effect transistors

Terahertz Beam Testing of Millimeter Wave Monolithic Integrated Circuits

Low-Frequency Current Fluctuations in “Graphene-like” Exfoliated Thin-Films of Bismuth Selenide Topological Insulators

AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches

Observation of the memory steps in graphene at elevated temperatures

Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs

SiC Materials and Devices

1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors

1/ f Noise Characteristics of MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors

Effect of ultraviolet light on 1/f noise in carbon nanotube networks

Low Frequency Noise in 4H-SiC MOSFETs

Temperature dependence of turn-on processes in 4H–SiC thyristors

Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applicationsElectronic supplementary information (ESI) available: Details of the material synthesis, device fabrication, transmission electron microscopy and diffraction. See DOI: 10.1039/c6nr03469a

SiC materials and devices: Volume 1

Breakdown current density in h-BN-capped quasi-1D TaSe 3 metallic nanowires: prospects of interconnect applications

1/f noise in conducting channels of topological insulator materials

Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor

Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors

Optical Triggering of 12 kV 1 cm super(2) 4H-SiC Thyristors

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors

1/f noise in conducting channels of topological insulator materials

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

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