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A Nanocrystalline Silicon Surface-Passivation Layer on an HR-Si Substrate for RFICs

IEEE electron device letters, 2011-03, Vol.32 (3), p.369-371

2011

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IEEE_Xplore

Single-/multiband CMOS low-noise amplifier using concentric switching inductors

Microwave and optical technology letters, 2012-02, Vol.54 (2), p.309-315

2012

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CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EJ06-5

2014

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Transmission Performances of CPW Lines on a Laser-Crystallization Polysilicon Passivated High-Resistivity Silicon Substrate

IEEE transactions on components, packaging, and manufacturing technology (2011), 2012-05, Vol.2 (5), p.847-851

2012

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IEEE_Xplore

A band-switchable CMOS low noise amplifier using switching inductors

Microwave and optical technology letters, 2011-02, Vol.53 (2), p.462-467

2011

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The Layout Geometry Dependence of the Power Cells on Performances and Reliability

IEEE microwave and wireless components letters, 2010-12, Vol.20 (12), p.687-689

2010

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IEEE_Xplore

Degeneration of CMOS Power Cells After Hot-Carrier and Load Mismatch Stresses

IEEE electron device letters, 2008-09, Vol.29 (9), p.1068-1070

2008

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IEEE_Xplore

Multiple type biosensors fabricated using the CMOS BioMEMS platform

Sensors and actuators. B, Chemical, 2010-02, Vol.144 (2), p.407-412

2010

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Switching-capacitor current-reused VCO with symmetrical differential outputs

Microwave and optical technology letters, 2010-03, Vol.52 (3), p.600-604

2010

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Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer

IEEE electron device letters, 2003-10, Vol.24 (10), p.622-624

2003

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IEEE_Xplore

CMOS pulse-width-modulation readout circuit with a wide modulation range for ion-sensitive FET-based sensors

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DL02-6

2015

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Radio-Frequency Inductors on High-Resistivity Silicon Substrates with a Nanocrystalline Silicon Passivation Layer

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CB03-04CB03-4

2013

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Multisensor readout circuit using a multiple differential-input operation amplifier with pulse output

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EE21-6

2014

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Monolithic CMOS ISFET with Built-in Gold Reference Electrode and Readout Circuit with Frequency-adjustable Pulse Output in Bio Detection

Procedia engineering, 2014, Vol.87, p.272-275

2014

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A High-linearity CMOS Temperature Sensor Using a PTAT-voltage Driving Common-source Amplifier with a Source Resistor

Procedia engineering, 2015, Vol.120, p.1209-1212

2015

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CMOS Biomedical Sensor with In Situ Gold Reference Electrode for Urine Detection Application

Procedia engineering, 2012, Vol.47, p.1005-1008

2012

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The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal--Oxide--Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DC27-04DC27-3

2010

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Stability of Measurement of Heterojunction Bipolar Transistors Current-Voltage Characteristics with Thermal Effect

Japanese Journal of Applied Physics, 2002-12, Vol.41 (Part 2, No. 12A), p.L1360-L1362

2002

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A high sensitivity CMOS compatible urea enzyme field effect transistor without enzyme immobilizationer

2012 IEEE Sensors, 2012, p.1-3

2012

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IEEE_Xplore

A fully compatible CMOS-based hydrogen ion sensor using natural forming sensing membrane for urea detecting application

Procedia chemistry, 2009-09, Vol.1 (1), p.1067-1070

2009

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3~5 GHz Cascoded UWB Power Amplifier

APCCAS 2006 - 2006 IEEE Asia Pacific Conference on Circuits and Systems, 2006, p.367-369

2006

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IEEE_Xplore

ISFET with built-in gold electrode and readout circuit with frequency-adjustable pulse output

2013 Seventh International Conference on Sensing Technology (ICST), 2013, p.457-460

2013

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IEEE_Xplore

Delta-doping interband tunneling diode by metal-organic chemical vapor deposition

IEEE transactions on electron devices, 1993-12, Vol.40 (12), p.2192-2198

1993

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IEEE_Xplore

A low power, good gain flatness SiGe low noise amplifier for 3.1-10.6GHz ultra wide band radio

2007 50th Midwest Symposium on Circuits and Systems, 2007, p.750-753

2007

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IEEE_Xplore

Performance degeneration of CMOS RF power cells after hot-carrier and load mismatch stresses

2007 50th Midwest Symposium on Circuits and Systems, 2007, p.1062-1065

2007

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IEEE_Xplore

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A Nanocrystalline Silicon Surface-Passivation Layer on an HR-Si Substrate for RFICs

Single-/multiband CMOS low-noise amplifier using concentric switching inductors

CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

Transmission Performances of CPW Lines on a Laser-Crystallization Polysilicon Passivated High-Resistivity Silicon Substrate

A band-switchable CMOS low noise amplifier using switching inductors

The Layout Geometry Dependence of the Power Cells on Performances and Reliability

Degeneration of CMOS Power Cells After Hot-Carrier and Load Mismatch Stresses

Multiple type biosensors fabricated using the CMOS BioMEMS platform

Switching-capacitor current-reused VCO with symmetrical differential outputs

Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer

CMOS pulse-width-modulation readout circuit with a wide modulation range for ion-sensitive FET-based sensors

Radio-Frequency Inductors on High-Resistivity Silicon Substrates with a Nanocrystalline Silicon Passivation Layer

Multisensor readout circuit using a multiple differential-input operation amplifier with pulse output

Monolithic CMOS ISFET with Built-in Gold Reference Electrode and Readout Circuit with Frequency-adjustable Pulse Output in Bio Detection

A High-linearity CMOS Temperature Sensor Using a PTAT-voltage Driving Common-source Amplifier with a Source Resistor

CMOS Biomedical Sensor with In Situ Gold Reference Electrode for Urine Detection Application

The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal--Oxide--Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System

Stability of Measurement of Heterojunction Bipolar Transistors Current-Voltage Characteristics with Thermal Effect

A high sensitivity CMOS compatible urea enzyme field effect transistor without enzyme immobilizationer

A fully compatible CMOS-based hydrogen ion sensor using natural forming sensing membrane for urea detecting application

3~5 GHz Cascoded UWB Power Amplifier

ISFET with built-in gold electrode and readout circuit with frequency-adjustable pulse output

Delta-doping interband tunneling diode by metal-organic chemical vapor deposition

A low power, good gain flatness SiGe low noise amplifier for 3.1-10.6GHz ultra wide band radio

Performance degeneration of CMOS RF power cells after hot-carrier and load mismatch stresses

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