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Atomically precise placement of single dopants in si

Physical review letters, 2003-09, Vol.91 (13), p.136104-136104, Article 136104

2003

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Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy

Physical review letters, 2012-10, Vol.109 (14), p.146102-146102, Article 146102

2012

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Measurement of quantum states of neutrons in the Earth’s gravitational field

Physical review. D, Particles and fields, 2003-05, Vol.67 (10), Article 102002

2003

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Quantum states of neutrons in the Earth's gravitational field

Nature (London), 2002-01, Vol.415 (6869), p.297-299

2002

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Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy

Nanotechnology, 2007-01, Vol.18 (4), p.044023-044023 (5)

2007

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Electronic properties of atomically abrupt tunnel junctions in silicon

Physical review. B, Condensed matter and materials physics, 2007-03, Vol.75 (12), Article 121303

2007

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Toward a Fully Autonomous UAV: Research Platform for Indoor and Outdoor Urban Search and Rescue

IEEE robotics & automation magazine, 2012-09, Vol.19 (3), p.46-56

2012

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β -NMR Study of a buried Mn δ-doped layer in a silicon host

Journal of physics. Conference series, 2014, Vol.551 (1), p.12023

2014

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Comparison of GaP and PH3 as dopant sources for STM-based device fabrication

Nanotechnology, 2007-02, Vol.18 (6), p.065301-065301 (6)

2007

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Progress in silicon-based quantum computing

Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences, 2003-07, Vol.361 (1808), p.1451-1471

2003

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The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures

Nanotechnology, 2005-10, Vol.16 (10), p.2446-2449

2005

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Scanning probe microscopy for silicon device fabrication

Molecular simulation, 2005-05, Vol.31 (6-7), p.505-515

2005

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Kinetic Mechanism of Ca2+-controlled Changes of Skeletal Troponin I in Psoas Myofibrils

Biophysical journal, 2012-09, Vol.103 (6), p.1254-1264

2012

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Electrical properties of atomically controlled Si:P nanowires created by scanning probe microscopy

Physics of Semiconductors; Part B, 2007, Vol.893, p.687-688

2007

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Kinetic mechanism of the Ca2+-dependent switch-on and switch-off of cardiac troponin in myofibrils

Biophysical journal, 2007-12, Vol.93 (11), p.3917-3931

2007

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Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures

Applied physics letters, 2008-02, Vol.92 (5)

2008

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State estimation for highly dynamic flying systems using key frame odometry with varying time delays

2012 IEEE/RSJ International Conference on Intelligent Robots and Systems, 2012, p.2997-3004

2012

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Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy

Applied physics letters, 2005-04, Vol.86 (14)

2005

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Kinetic Mechanism of the Ca 2+-Dependent Switch-On and Switch-Off of Cardiac Troponin in Myofibrils

Biophysical journal, 2007-12, Vol.93 (11), p.3917-3931

2007

Volltextzugriff (PDF)

Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

Nano letters, 2004-10, Vol.4 (10), p.1969-1973

2004

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Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts

Journal of applied physics, 2007-08, Vol.102 (3), p.034308-034308-5

2007

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beta -NMR Study of a buried Mu delta -doped layer in a silicon host

Journal of physics. Conference series, 2014-01, Vol.551, p.1-5

2014

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Ohmic conduction of sub- 10 nm P-doped silicon nanowiresat cryogenic temperatures

Applied physics letters, 2008-02, Vol.92 (5), p.052101-052101-3

2008

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Structural and electrical characterization of room temperatureultra-high-vacuum compatible Si O 2 for gating scanning tunneling microscope-patterned devices

Applied physics letters, 2007-11, Vol.91 (22), p.222109-222109-3

2007

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Structural and electrical characterization of room temperature ultra-high-vacuum compatible SiO2 for gating scanning tunneling microscope-patterned devices

Applied physics letters, 2007-11, Vol.91 (22)

2007

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Atomically precise placement of single dopants in si

Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy

Measurement of quantum states of neutrons in the Earth’s gravitational field

Quantum states of neutrons in the Earth's gravitational field

Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy

Electronic properties of atomically abrupt tunnel junctions in silicon

Toward a Fully Autonomous UAV: Research Platform for Indoor and Outdoor Urban Search and Rescue

β -NMR Study of a buried Mn δ-doped layer in a silicon host

Comparison of GaP and PH3 as dopant sources for STM-based device fabrication

Progress in silicon-based quantum computing

The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures

Scanning probe microscopy for silicon device fabrication

Kinetic Mechanism of Ca2+-controlled Changes of Skeletal Troponin I in Psoas Myofibrils

Electrical properties of atomically controlled Si:P nanowires created by scanning probe microscopy

Kinetic mechanism of the Ca2+-dependent switch-on and switch-off of cardiac troponin in myofibrils

Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures

State estimation for highly dynamic flying systems using key frame odometry with varying time delays

Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy

Kinetic Mechanism of the Ca 2+-Dependent Switch-On and Switch-Off of Cardiac Troponin in Myofibrils

Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts

beta -NMR Study of a buried Mu delta -doped layer in a silicon host

Ohmic conduction of sub- 10 nm P-doped silicon nanowiresat cryogenic temperatures

Structural and electrical characterization of room temperatureultra-high-vacuum compatible Si O 2 for gating scanning tunneling microscope-patterned devices

Structural and electrical characterization of room temperature ultra-high-vacuum compatible SiO2 for gating scanning tunneling microscope-patterned devices

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