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SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

IEEE journal of microwaves, 2021-01, Vol.1 (1), p.288-298

2021

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Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

IEEE electron device letters, 2015-07, Vol.36 (7), p.642-644

2015

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IEEE_Xplore

Design and Phase Noise Measurements of an Ultrafast Dual-Modulus Prescaler in 130 nm SiGe:C BiCMOS

IEEE transactions on microwave theory and techniques, 2024-01, Vol.72 (1), p.1-13

2024

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A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications

IEEE journal of solid-state circuits, 2014-12, Vol.49 (12), p.2938-2950

2014

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IEEE_Xplore

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Proceedings of the IEEE, 2017-06, Vol.105 (6), p.1035-1050

2017

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IEEE_Xplore

Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4803-4809

2022

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IEEE_Xplore

A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications

IEEE journal of solid-state circuits, 2022-07, Vol.57 (7), p.2024-2034

2022

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A 142-GHz 4/5 Dual-Modulus Prescaler for Wideband and Low Noise Frequency Synthesizers in 130-nm SiGe:C BiCMOS

IEEE microwave and wireless technology letters (Print), 2023-06, Vol.33 (6), p.1-4

2023

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Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors

IEEE journal of selected topics in quantum electronics, 2014-11, Vol.20 (6), p.211-217

2014

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IEEE_Xplore

Effects of Guard-Ring Structures on the Performance of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology

IEEE electron device letters, 2012-01, Vol.33 (1), p.80-82

2012

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IEEE_Xplore

Performance Comparison of Broadband Traveling Wave Amplifiers in 130-nm SiGe:C SG13G2 and SG13G3 BiCMOS Technologies

IEEE microwave and wireless components letters, 2021-06, Vol.31 (6), p.744-747

2021

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IEEE_Xplore

Bandwidth Improvement of CMOS-APD With Carrier-Acceleration Technique

IEEE photonics technology letters, 2015-07, Vol.27 (13), p.1387-1390

2015

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IEEE_Xplore

14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS

2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014, p.256-257

2014

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IEEE_Xplore

Drain-extended MOS transistors capable for operation at 10 V and at radio frequencies

Solid-state electronics, 2011-11, Vol.65-66, p.45-50

2011

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A 1 mW Cryogenic LNA Exploiting Optimized SiGe HBTs to Achieve an Average Noise Temperature of 3.2 K from 4-8 GHz

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.181-184

2020

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IEEE_Xplore

Base doping and dopant profile control of SiGe npn and pnp HBTs

Applied surface science, 2008-07, Vol.254 (19), p.6013-6016

2008

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A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications

ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, p.369-372

2021

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SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

IEEE electron device letters, 2014, Vol.35 (8), p.814-816

2014

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A 140-180-GHz Broadband Amplifier with 7 dBm OP1dB and 400 GHz GBW in SiGe BiCMOS

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015, p.1-4

2015

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IEEE_Xplore

Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.185-188

2020

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IEEE_Xplore

Silicon Photonics-Wireless Interface IC for 60-GHz Wireless Link

IEEE photonics technology letters, 2012-07, Vol.24 (13), p.1112-1114

2012

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IEEE_Xplore

High-performance SiGe HBTs for next generation BiCMOS technology

Semiconductor science and technology, 2018-11, Vol.33 (11), p.114003

2018

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A Silicon Balanced Subharmonic Optoelectronic Mixer for 60-GHz Fiber-Wireless Downlink Application

IEEE photonics technology letters, 2011-12, Vol.23 (23), p.1805-1807

2011

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IEEE_Xplore

SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic Temperatures

IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.1183-1187

2010

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IEEE_Xplore

3-Gb/s 60-GHz Link With SiGe BiCMOS Receiver Front-End and CMOS Mixed-Mode QPSK Demodulator

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2011, 11(4), 44, pp.256-261

2011

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SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Design and Phase Noise Measurements of an Ultrafast Dual-Modulus Prescaler in 130 nm SiGe:C BiCMOS

A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress

A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications

A 142-GHz 4/5 Dual-Modulus Prescaler for Wideband and Low Noise Frequency Synthesizers in 130-nm SiGe:C BiCMOS

Optical-Power Dependence of Gain, Noise, and Bandwidth Characteristics for 850-nm CMOS Silicon Avalanche Photodetectors

Effects of Guard-Ring Structures on the Performance of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology

Performance Comparison of Broadband Traveling Wave Amplifiers in 130-nm SiGe:C SG13G2 and SG13G3 BiCMOS Technologies

Bandwidth Improvement of CMOS-APD With Carrier-Acceleration Technique

14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS

Drain-extended MOS transistors capable for operation at 10 V and at radio frequencies

A 1 mW Cryogenic LNA Exploiting Optimized SiGe HBTs to Achieve an Average Noise Temperature of 3.2 K from 4-8 GHz

Base doping and dopant profile control of SiGe npn and pnp HBTs

A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications

SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

A 140-180-GHz Broadband Amplifier with 7 dBm OP1dB and 400 GHz GBW in SiGe BiCMOS

Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier

Silicon Photonics-Wireless Interface IC for 60-GHz Wireless Link

High-performance SiGe HBTs for next generation BiCMOS technology

A Silicon Balanced Subharmonic Optoelectronic Mixer for 60-GHz Fiber-Wireless Downlink Application

SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic Temperatures

3-Gb/s 60-GHz Link With SiGe BiCMOS Receiver Front-End and CMOS Mixed-Mode QPSK Demodulator

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