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Implicit and explicit discrete-time realizations of the robust exact filtering differentiator

Journal of the Franklin Institute, 2022-05, Vol.359 (8), p.3951-3978

2022

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Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

Thin solid films, 2010-02, Vol.518 (9), p.2448-2453

2010

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Global Solution of Optimal Shape Design Problems

Zeitschrift für Analysis und ihre Anwendungen, 1999-01, Vol.18 (1), p.143-155

1999

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The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.260-263

2008

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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Journal of applied physics, 2005-08, Vol.98 (4), p.046104-046104-3

2005

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The Theory of Linear Systems

1, 1971

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On the Discretization of Robust Exact Filtering Differentiators

IFAC-PapersOnLine, 2020, Vol.53 (2), p.5153-5158

2020

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Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.151-155

2004

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Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124-125, p.392-396

2005

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Comprehensive, physically based modelling of As in Si

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.135-140

2004

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Physically based modeling of dislocation loops in ion implantation processing in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.404-408

2005

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Physical modeling of Fermi-level effects for decanano device process simulations

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.284-289

2004

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Comprehensive modeling of ion-implant amorphization in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.383-385

2005

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Dose loss and segregation of boron and arsenic at the Si/SiO 2 interface by atomistic kinetic Monte Carlo simulations

Materials science & engineering. B, Solid-state materials for advanced technology, 2005, Vol.124, p.392-396

2005

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A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.345-348

2004

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Bimodal distribution of damage morphology generated by ion implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.389-391

2005

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Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.386-388

2005

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Optimal control problems with unbounded constraint sets

Optimization, 2000-01, Vol.48 (2), p.191-210

Rubio, J.E

2000

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The optimal control of nonlinear diffusion equations with rough initial data

Journal of the Franklin Institute, 2000-09, Vol.337 (6), p.673-690

Rubio, J.E.

2000

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Partial differential equations of evolution

Endeavour (New series), 1991-01, Vol.15 (4), p.190

Rubio, J.E

1991

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Particles and paradoxes: The limits of quantum logic

Endeavour (New series), 1988-01, Vol.12 (4), p.194

Rubio, J.E

1988

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A new variational principle

Optimization, 1994-01, Vol.29 (1), p.57-72

Rubio, J.E.

1994

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Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

Journal of applied physics, 1997-02, Vol.81 (3), p.1488-1494

1997

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Molecular dynamics simulation of amorphous silicon sputtering by Ar + ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995, Vol.102 (1), p.301-304

1995

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An improved molecular dynamics scheme for ion bombardment simulations

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-08, Vol.102 (1), p.7-11

1995

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Implicit and explicit discrete-time realizations of the robust exact filtering differentiator

Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

Global Solution of Optimal Shape Design Problems

The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

The Theory of Linear Systems

On the Discretization of Robust Exact Filtering Differentiators

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

Comprehensive, physically based modelling of As in Si

Physically based modeling of dislocation loops in ion implantation processing in silicon

Physical modeling of Fermi-level effects for decanano device process simulations

Comprehensive modeling of ion-implant amorphization in silicon

Dose loss and segregation of boron and arsenic at the Si/SiO 2 interface by atomistic kinetic Monte Carlo simulations

A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

Bimodal distribution of damage morphology generated by ion implantation

Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

Optimal control problems with unbounded constraint sets

The optimal control of nonlinear diffusion equations with rough initial data

Partial differential equations of evolution

Particles and paradoxes: The limits of quantum logic

A new variational principle

Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

Molecular dynamics simulation of amorphous silicon sputtering by Ar + ions

An improved molecular dynamics scheme for ion bombardment simulations

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