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Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

IEEE photonics technology letters, 2003-05, Vol.15 (5), p.649-651

2003

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Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts

IEEE photonics technology letters, 2003-05, Vol.15 (5), p.646-648

2003

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Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

IEEE photonics technology letters, 2003-10, Vol.15 (10), p.1342-1344

2003

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Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n -GaN layers

Applied physics letters, 2003-10, Vol.83 (17), p.3608-3610

2003

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Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2004-02, Vol.43 (No. 2B), p.L264-L266

2004

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Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers

IEEE photonics technology letters, 2003-08, Vol.15 (8), p.1050-1052

2003

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Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures

Japanese Journal of Applied Physics, 2004-06, Vol.43 (6A), p.L740-L742

2004

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Comparative Study of InGaN/GaN Structures Grown by MOCVD Using Various Growth Sequences

physica status solidi (b), 2001-11, Vol.228 (1), p.95-98

2001

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High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes

Japanese Journal of Applied Physics, 2004, Vol.43 (3R), p.968-969

2004

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Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2003-04, Vol.24 (4), p.206-208

2003

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Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers

Japanese Journal of Applied Physics, 1998-09, Vol.37 (9R), p.4732

1998

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Growth, Optical and Structural Characterization of InGaN/GaN/AlGaN Optically Pumped Lasers

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.73-77

2001

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Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2003-04, Vol.24 (4), p.206-208

2003

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Improvement of InGaN/GaN laser diodes by using a Si-doped In/0.23/Ga/0.77/N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2003-04, Vol.24 (4), p.206-208

2003

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Improvement of InGaN/GaN laser diodes by using a Si-doped In sub(0.23)Ga sub(0.77)N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2003-01, Vol.24 (4)

2003

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Performance of AlGaN/GaN heterostructure FETs over temperatures

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, 2004, Vol.3, p.2265-2268 vol.3

2004

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Preeclampsia-eclampsia and future cardiovascular risk among women in Taiwan

Taiwanese journal of obstetrics & gynecology, 2018-06, Vol.57 (3), p.364-369

2018

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Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences

Physica status solidi. B. Basic research, 2001, Vol.228 (1), p.95-98

2001

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Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers

Physica status solidi. A. Applied research, 2001, Vol.188 (1), p.73-77

2001

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Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts

Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n -GaN layers

Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers

Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures

Comparative Study of InGaN/GaN Structures Grown by MOCVD Using Various Growth Sequences

High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes

Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers

Growth, Optical and Structural Characterization of InGaN/GaN/AlGaN Optically Pumped Lasers

Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer

Improvement of InGaN/GaN laser diodes by using a Si-doped In/0.23/Ga/0.77/N/GaN short-period superlattice tunneling contact layer

Improvement of InGaN/GaN laser diodes by using a Si-doped In sub(0.23)Ga sub(0.77)N/GaN short-period superlattice tunneling contact layer

Performance of AlGaN/GaN heterostructure FETs over temperatures

Preeclampsia-eclampsia and future cardiovascular risk among women in Taiwan

Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences

Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers

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