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Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1633-1640

2024

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Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5720-5727

2021

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On the Channel Hot-Electron's Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4869-4876

2021

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Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-8

2023

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Modeling and Estimation of Friction, Extension, and Coupling Effects in Multisegment Continuum Robots

IEEE/ASME transactions on mechatronics, 2017-04, Vol.22 (2), p.909-920

2017

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Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6465-6472

2023

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Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.80-87

2021

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Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6602-6609

2022

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Topological Control of Synchronization Patterns: Trading Symmetry for Stability

Physical review letters, 2019-02, Vol.122 (5), p.058301-058301, Article 058301

2019

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Neuronal Avalanches Imply Maximum Dynamic Range in Cortical Networks at Criticality

The Journal of neuroscience, 2009-12, Vol.29 (49), p.15595-15600

2009

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Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

IEEE transactions on electron devices, 2024-11, Vol.71 (11), p.6588-6595

2024

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Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs-Part I

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.72-79

2021

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Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs-Part II

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5728-5735

2021

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Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6934-6939

2022

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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6035-6042

2022

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Amino-functionalized graphene quantum dots: origin of tunable heterogeneous photoluminescence

Nanoscale, 2014, Vol.6 (6), p.3384

2014

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Pure Tin Halide Perovskite Solar Cells: Focusing on Preparation and Strategies

Advanced energy materials, 2023-01, Vol.13 (3), p.n/a

2023

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Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1608-1611

2022

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Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5251-5257

2024

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Packet-level and IEEE 802.11 MAC frame-level network traffic traces data of the D-Link IoT devices

Data in brief, 2021-08, Vol.37, p.107208-107208, Article 107208

2021

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Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6211-6216

2023

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Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6183-6189

2023

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Machine Learning Link Inference of Noisy Delay-Coupled Networks with Optoelectronic Experimental Tests

Physical review. X, 2021-07, Vol.11 (3), p.031014, Article 031014

2021

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Complete characterization of the stability of cluster synchronization in complex dynamical networks

Science advances, 2016-04, Vol.2 (4), p.e1501737-e1501737

2016

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Scheduling Status Update for Optimizing Age of Information in the Context of Industrial Cyber-Physical System

IEEE access, 2019, Vol.7, p.95677-95695

2019

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Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si

Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

On the Channel Hot-Electron's Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance

Modeling and Estimation of Friction, Extension, and Coupling Effects in Multisegment Continuum Robots

Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si

Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs-Part II

Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

Topological Control of Synchronization Patterns: Trading Symmetry for Stability

Neuronal Avalanches Imply Maximum Dynamic Range in Cortical Networks at Criticality

Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs-Part I

Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs-Part II

Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

Amino-functionalized graphene quantum dots: origin of tunable heterogeneous photoluminescence

Pure Tin Halide Perovskite Solar Cells: Focusing on Preparation and Strategies

Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs

Packet-level and IEEE 802.11 MAC frame-level network traffic traces data of the D-Link IoT devices

Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes

Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II

Machine Learning Link Inference of Noisy Delay-Coupled Networks with Optoelectronic Experimental Tests

Complete characterization of the stability of cluster synchronization in complex dynamical networks

Scheduling Status Update for Optimizing Age of Information in the Context of Industrial Cyber-Physical System

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