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Improved measurement of electric fields by nanobeam precession electron diffraction

Journal of applied physics, 2020-05, Vol.127 (20)

2020

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Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

Semiconductor science and technology, 2017-09, Vol.32 (9), p.94006

2017

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Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Applied physics letters, 2018-01, Vol.112 (5)

2018

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Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

Nano letters, 2012-11, Vol.12 (11), p.5691-5696

2012

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Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

Journal of microscopy (Oxford), 2016-05, Vol.262 (2), p.178-182

2016

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Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography

Ultramicroscopy, 2013-08, Vol.131, p.10-23

2013

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Quantitative evaluation of process induced strain in MOS transistors by Convergent Beam Electron Diffraction

Micron (Oxford, England : 1993), 2009-12, Vol.40 (8), p.886-893

2009

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Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate

Nanotechnology, 2024-10, Vol.35 (50), p.505602

2024

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Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

Applied physics letters, 2004-05, Vol.84 (18), p.3684-3686

2004

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Nano-field mapping for the semiconductor industry

Journal of physics. Conference series, 2011-11, Vol.326 (1), p.012054-4

2011

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Proposition of a model elucidating the AlN-on-Si (111) microstructure

Journal of applied physics, 2018-06, Vol.123 (21)

2018

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Theoretical discussions on the geometrical phase analysis

Ultramicroscopy, 2005-12, Vol.106 (1), p.1-17

2005

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Improved precision in strain measurement using nanobeam electron diffraction

Applied physics letters, 2009-09, Vol.95 (12), p.123114-123114-3

2009

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Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model

2015 45th European Solid State Device Research Conference (ESSDERC), 2015, p.210-213

2015

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Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction

Chemistry of materials, 2011-10, Vol.23 (20), p.4515-4524

2011

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Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

Applied physics letters, 1998-08, Vol.73 (5), p.668-670

1998

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Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction

Ultramicroscopy, 2016-01, Vol.160, p.64-73

2016

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Strain distribution in nitride quantum dot multilayers

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (12), Article 125327

2004

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Zero-dimensional excitons in CdTe/ZnTe nanostructures

Journal of applied physics, 2002-04, Vol.91 (8), p.4936-4943

2002

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Hidden defects in silicon nanowires

Nanotechnology, 2012-01, Vol.23 (2), p.025701-1-10

2012

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Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode

Micron (Oxford, England : 1993), 2014-07, Vol.62, p.52-65

2014

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Dark field electron holography for strain measurement

Ultramicroscopy, 2011-02, Vol.111 (3), p.227-238

2011

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Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Phys. Status Solidi (b). Vol. 240, no. 2, pp. 314-317. 2003, 2003-11, Vol.240 (2), p.314-317

2003

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Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

Applied physics letters, 2018-05, Vol.112 (20)

2018

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Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy

Journal of applied physics, 2004-07, Vol.96 (2), p.1104-1110

2004

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Improved measurement of electric fields by nanobeam precession electron diffraction

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography

Quantitative evaluation of process induced strain in MOS transistors by Convergent Beam Electron Diffraction

Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

Nano-field mapping for the semiconductor industry

Proposition of a model elucidating the AlN-on-Si (111) microstructure

Theoretical discussions on the geometrical phase analysis

Improved precision in strain measurement using nanobeam electron diffraction

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model

Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction

Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction

Strain distribution in nitride quantum dot multilayers

Zero-dimensional excitons in CdTe/ZnTe nanostructures

Hidden defects in silicon nanowires

Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode

Dark field electron holography for strain measurement

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy

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