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(001) silicon surfacial grain boundaries obtained by direct wafer bonding process: accurate control of the structure before bonding

Philosophical magazine (Abingdon, England), 2005-07, Vol.85 (21), p.2415-2448

2005

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2D/3D growth of GaN by molecular beam epitaxy: towards GaN quantum dots

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.8-11

1997

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Accurate control of the misorientation angles in direct wafer bonding

Applied physics letters, 2002-02, Vol.80 (5), p.793-795

2002

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Acute thrombosis of renal transplant artery: graft salvage by means of intra-arterial fibrinolysis

Transplantation, 2002-02, Vol.73 (3), p.403

2002

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Advanced semiconductor characterization with aberration corrected electron microscopes

Journal of physics. Conference series, 2013-01, Vol.471 (1), p.12001-10

2013

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Alternate dissociation of the screw dislocations in a (0 0 1) buried small-angle twist boundary in silicon

Philosophical magazine (Abingdon, England), 2009-02, Vol.89 (5), p.413-434

2009

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Annealed Si/SiGeC Superlattices Studied by Dark-Field Electron Holography, ToF-SIMS and Infrared Spectroscopy

AIP conference proceedings, 2011, Vol.1395 (1)

2011

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Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Thin solid films, 2018-01, Vol.645, p.5-9

2018

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Apport de l'imagerie dans le cancer de prostate: L'urologie par ses images : rapport du congrès 2003 de l'Association Française d'Urologie

Progrès en urologie (Paris), 2003, Vol.13 (5), p.843-884

2003

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Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study

Journal of applied physics, 1998-10, Vol.84 (8), p.4300-4308

1998

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Atomic layer epitaxy of CdTe, MgTe and MnTe; growth of CdTe/MnTe tilted superlattices on vicinal surfaces

Applied surface science, 1997-03, Vol.112, p.142-147

1997

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Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

Journal of applied physics, 2002-04, Vol.91 (8), p.5498-5500

2002

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Atomic mixing induced in metallic bilayers by high electronic excitations

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-12, Vol.106 (1), p.28-33

1995

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Atomic Scale Analysis of Chemical Intermixing in MBE-Grown GaSb/InAs Superlattices Based on Z-Contrast Imaging

Microscopy and microanalysis, 2013-08, Vol.19 (S2), p.1988-1989

2013

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Atomic structure of ion-sputtered Fe/Ti multilayers studied by HREM

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1990-10, Vol.62 (4), p.415-434

1990

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Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

Physical review. B, Condensed matter, 1998-12, Vol.58 (24), p.R15989-R15992

1998

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Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Phys. Status Solidi (b). Vol. 240, no. 2, pp. 314-317. 2003, 2003-11, Vol.240 (2), p.314-317

2003

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Characterization of piezoresistive coefficients in silicon nanowire transistors

2014 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014, p.49-52

2014

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IEEE_Xplore

Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.83-86

2009

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Comparative study of hexagonal and cubic GaN growth by RF-MBE

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.233-237

1997

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Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures

Semiconductor science and technology, 2006-05, Vol.21 (5), p.612-618

2006

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Comprehensive overview on elastic strain relaxation mechanisms in nitride heterostructures: Stranski-Krastanow versus Frank-Van der Merwe growth mode

Physica status solidi. C, 2003-12 (7), p.2525-2528

2003

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Conclusion

Rouvière, Nicolas

2012

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Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-04, Vol.81 (1-3), p.43-45

2001

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(001) silicon surfacial grain boundaries obtained by direct wafer bonding process: accurate control of the structure before bonding

2D/3D growth of GaN by molecular beam epitaxy: towards GaN quantum dots

Accurate control of the misorientation angles in direct wafer bonding

Acute thrombosis of renal transplant artery: graft salvage by means of intra-arterial fibrinolysis

Advanced semiconductor characterization with aberration corrected electron microscopes

Alternate dissociation of the screw dislocations in a (0 0 1) buried small-angle twist boundary in silicon

Annealed Si/SiGeC Superlattices Studied by Dark-Field Electron Holography, ToF-SIMS and Infrared Spectroscopy

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Apport de l'imagerie dans le cancer de prostate: L'urologie par ses images : rapport du congrès 2003 de l'Association Française d'Urologie

Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study

Atomic layer epitaxy of CdTe, MgTe and MnTe; growth of CdTe/MnTe tilted superlattices on vicinal surfaces

Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

Atomic mixing induced in metallic bilayers by high electronic excitations

Atomic Scale Analysis of Chemical Intermixing in MBE-Grown GaSb/InAs Superlattices Based on Z-Contrast Imaging

Atomic structure of ion-sputtered Fe/Ti multilayers studied by HREM

Bande dessinée et enseignement des humanités

Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Characterization of piezoresistive coefficients in silicon nanowire transistors

Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

Comparative study of hexagonal and cubic GaN growth by RF-MBE

Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures

Comprehensive overview on elastic strain relaxation mechanisms in nitride heterostructures: Stranski-Krastanow versus Frank-Van der Merwe growth mode

Conclusion

Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates

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