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Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography

Ultramicroscopy, 2013-08, Vol.131, p.10-23

2013

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Proposition of a model elucidating the AlN-on-Si (111) microstructure

Journal of applied physics, 2018-06, Vol.123 (21)

2018

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Theoretical discussions on the geometrical phase analysis

Ultramicroscopy, 2005-12, Vol.106 (1), p.1-17

2005

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Improved precision in strain measurement using nanobeam electron diffraction

Applied physics letters, 2009-09, Vol.95 (12), p.123114-123114-3

2009

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Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction

Chemistry of materials, 2011-10, Vol.23 (20), p.4515-4524

2011

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Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

Applied physics letters, 2018-05, Vol.112 (20)

2018

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Dark field electron holography for strain measurement

Ultramicroscopy, 2011-02, Vol.111 (3), p.227-238

2011

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Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model

Solid-state electronics, 2016-11, Vol.125, p.175-181

2016

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Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations

Applied physics letters, 2004-07, Vol.85 (4), p.651-653

2004

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Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers

Ultramicroscopy, 2006-08, Vol.106 (10), p.951-959

2006

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Measuring strain on HR-STEM images: application to threading dislocations in Al0.8In0.2N

Journal of physics. Conference series, 2011-11, Vol.326 (1), p.012022

2011

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Visualization of Tm dopant atoms diffused out of GaN quantum dots

Applied physics letters, 2010-06, Vol.96 (25), p.251908-251908-3

2010

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Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure

Microelectronic engineering, 2013-06, Vol.106, p.168-171

2013

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Improved measurement of electric fields by nanobeam precession electron diffraction

Journal of applied physics, 2020-05, Vol.127 (20)

2020

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Improved accuracy in nano beam electron diffraction

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012063

2010

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Strain distribution in GaN∕AlN quantum-dot superlattices

Applied physics letters, 2005-11, Vol.87 (20)

2005

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The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography

Semiconductor science and technology, 2011-12, Vol.26 (12), p.125010

2011

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Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

Semiconductor science and technology, 2017-09, Vol.32 (9), p.94006

2017

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Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

Journal of microscopy (Oxford), 2016-05, Vol.262 (2), p.178-182

2016

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Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation

Journal of applied physics, 2012-04, Vol.111 (8)

2012

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Advanced semiconductor characterization with aberration corrected electron microscopes

Journal of physics. Conference series, 2013-01, Vol.471 (1), p.12001-10

2013

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GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN

Applied physics letters, 2002-10, Vol.81 (16), p.3064-3066

2002

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Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Applied physics letters, 2018-01, Vol.112 (5)

2018

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Growth kinetics and optical properties of self-organized GaN quantum dots

Journal of applied physics, 1998-06, Vol.83 (12), p.7618-7624

1998

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Measuring two dimensional strain state of AlN quantum dots in GaN nanowires by nanobeam electron diffraction

Journal of physics. Conference series, 2011-11, Vol.326 (1), p.012047-4

2011

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Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography

Proposition of a model elucidating the AlN-on-Si (111) microstructure

Theoretical discussions on the geometrical phase analysis

Improved precision in strain measurement using nanobeam electron diffraction

Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

Dark field electron holography for strain measurement

Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model

Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations

Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers

Measuring strain on HR-STEM images: application to threading dislocations in Al0.8In0.2N

Visualization of Tm dopant atoms diffused out of GaN quantum dots

Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure

Improved measurement of electric fields by nanobeam precession electron diffraction

Improved accuracy in nano beam electron diffraction

Strain distribution in GaN∕AlN quantum-dot superlattices

The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation

Advanced semiconductor characterization with aberration corrected electron microscopes

GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Growth kinetics and optical properties of self-organized GaN quantum dots

Measuring two dimensional strain state of AlN quantum dots in GaN nanowires by nanobeam electron diffraction

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