UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI

IEEE electron device letters, 2010-05, Vol.31 (5), p.411-413

2010

Volltextzugriff (PDF)

Line-to-Line TDDB Modeling: LER Specs for Sub-20-nm Pitch Interconnects

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4332-4337

2023

Volltextzugriff (PDF)

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Microelectronics and reliability, 2018-02, Vol.81, p.186-194

2018

Volltextzugriff (PDF)

Possible Origins, Identification, and Screening of Silent Data Corruption in Data Centers

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

Volltextzugriff (PDF)

Origin of NBTI variability in deeply scaled pFETs

2010 IEEE International Reliability Physics Symposium, 2010, p.26-32

2010

Volltextzugriff (PDF)

Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

Microelectronic engineering, 2009-07, Vol.86 (7), p.1582-1584

2009

Volltextzugriff (PDF)

Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics

Microelectronic engineering, 2011-07, Vol.88 (7), p.1243-1246

2011

Volltextzugriff (PDF)

Ubiquitous relaxation in BTI stressing-New evaluation and insights

2008 IEEE International Reliability Physics Symposium, 2008, p.20-27

2008

Volltextzugriff (PDF)

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

Solid-state electronics, 2016-11, Vol.125, p.52-62

2016

Volltextzugriff (PDF)

On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1388-1391

2011

Volltextzugriff (PDF)

Assessment of critical Co electromigration parameters

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.8C.2-1-8C.2-7

2022

Volltextzugriff (PDF)

Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology

2015 IEEE International Reliability Physics Symposium, 2015, p.3B.1.1-3B.1.6

2015

Volltextzugriff (PDF)

Atomistic approach to variability of bias-temperature instability in circuit simulations

2011 International Reliability Physics Symposium, 2011, p.XT.3.1-XT.3.5

2011

Volltextzugriff (PDF)

Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

Applied physics letters, 2011-05, Vol.98 (18), p.183506-183506-3

2011

Volltextzugriff (PDF)

Origins and implications of increased channel hot carrier variability in nFinFETs

2015 IEEE International Reliability Physics Symposium, 2015, p.3B.5.1-3B.5.6

2015

Volltextzugriff (PDF)

A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling

Microelectronic engineering, 2007-09, Vol.84 (9), p.1925-1928

2007

Volltextzugriff (PDF)

Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

Volltextzugriff (PDF)

NBTI from the perspective of defect states with widely distributed time scales

2009 IEEE International Reliability Physics Symposium, 2009, p.55-60

2009

Volltextzugriff (PDF)

Defect-centric perspective of time-dependent BTI variability

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1883-1890

2012

Volltextzugriff (PDF)

Recent trends in bias temperature instability

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

Volltextzugriff (PDF)

Defect-based methodology for workload-dependent circuit lifetime projections - Application to SRAM

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.3A.4.1-3A.4.7

2013

Volltextzugriff (PDF)

On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects

2016 IEEE International Integrated Reliability Workshop (IIRW), 2016, p.18-20

2016

Volltextzugriff (PDF)

Superior reliability of high mobility (Si)Ge channel pMOSFETs

Microelectronic engineering, 2013-09, Vol.109, p.250-256

2013

Volltextzugriff (PDF)

The defect-centric perspective of device and circuit reliability - From individual defects to circuits

2015 45th European Solid State Device Research Conference (ESSDERC), 2015, p.218-225

2015

Volltextzugriff (PDF)

Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.P-MY.5-1-P-MY.5-6

2018

Volltextzugriff (PDF)

1 – 25 von 270

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(167)
Mit Volltextzugriff
(254)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(161)
Physics
(112)
Physical Sciences
(105)
Technology
(100)
Engineering
(88)
Engineering, Electrical & Electronic
(88)
Exact Sciences And Technology
(52)
Physics, Applied
(52)
Logic Gates
(42)
Reliability
(38)
Astronomy & Astrophysics
(35)
Stress
(31)
Astrophysics
(29)
Science & Technology - Other Topics
(28)
Nanoscience & Nanotechnology
(26)
Degradation
(24)
Astronomy
(23)
Sciences Of The Universe
(23)
Earth, Ocean, Space
(20)
Stars: Formation
(20)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI

Line-to-Line TDDB Modeling: LER Specs for Sub-20-nm Pitch Interconnects

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Possible Origins, Identification, and Screening of Silent Data Corruption in Data Centers

Origin of NBTI variability in deeply scaled pFETs

Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics

Ubiquitous relaxation in BTI stressing-New evaluation and insights

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

Assessment of critical Co electromigration parameters

Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology

Atomistic approach to variability of bias-temperature instability in circuit simulations

Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

Origins and implications of increased channel hot carrier variability in nFinFETs

A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling

Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

NBTI from the perspective of defect states with widely distributed time scales

Defect-centric perspective of time-dependent BTI variability

Recent trends in bias temperature instability

Defect-based methodology for workload-dependent circuit lifetime projections - Application to SRAM

On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects

Superior reliability of high mobility (Si)Ge channel pMOSFETs

The defect-centric perspective of device and circuit reliability - From individual defects to circuits

Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown

Suchergebnisse filtern