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Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.500-506

2002

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New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.904-911

1998

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Dielectric Reliability Study of 21 nm Pitch Interconnects with Barrierless Ru Fill

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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A New TDDB Reliability Prediction Methodology Accounting for Multiple SBD and Wear Out

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1424-1432

2009

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Comphy — A compact-physics framework for unified modeling of BTI

Microelectronics and reliability, 2018-06, Vol.85, p.49-65

2018

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A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.472-481

1998

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Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1705-1712

2007

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Statistical insight into controlled forming and forming free stacks for HfOx RRAM

Microelectronic engineering, 2013-09, Vol.109, p.177-181

2013

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NBTI from the perspective of defect states with widely distributed time scales

2009 IEEE International Reliability Physics Symposium, 2009, p.55-60

2009

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The impact of plasma-charging damage on the RF performance of deep-submicron MOSFET

IEEE electron device letters, 2002-06, Vol.23 (6), p.309-311

2002

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A Statistical Approach to Microdose Induced Degradation in FinFET Devices

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3285-3292

2009

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Charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1261

2003

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SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection

2008 IEEE International Reliability Physics Symposium, 2008, p.324-329

2008

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Evidence of a new degradation mechanism in high-k dielectrics at elevated temperatures

2009 IEEE International Reliability Physics Symposium, 2009, p.493-498

2009

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Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs

2008 Symposium on VLSI Technology, 2008, p.14-15

2008

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Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1261-1269

2003

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Capping-metal gate integration technology for multiple-VT CMOS in MuGFETs

2008 IEEE International SOI Conference, 2008, p.119-120

2008

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On the Recovery of Simulated Plasma Process Induced Damage in High- κ Dielectrics

2006 IEEE International Conference on IC Design and Technology, 2006, p.1-4

2006

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TDDB Reliability Prediction Based on the Statistical Analysis of Hard Breakdown Including Multiple Soft Breakdown and Wear-out

2007 IEEE International Electron Devices Meeting, 2007, p.501-504

2007

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Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectrics

IEEE transactions on device and materials reliability, 2001-06, Vol.1 (2), p.120-127

2001

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Energy and Spatial Distribution of Traps in [Formula Omitted] nMOSFETs

IEEE transactions on device and materials reliability, 2006-12, Vol.6 (4), p.509

2006

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Energy and Spatial Distribution of Traps in \hbox/\hbox\hbox nMOSFETs

IEEE transactions on device and materials reliability, 2006-12, Vol.6 (4), p.509-516

2006

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Pig Thrombomodulin Binds Human Thrombin but Is a Poor Cofactor for Activation of Human Protein C and TAFI

American journal of transplantation, 2008-06, Vol.8 (6), p.1101-1112

2008

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E2-RING Expansion of the NEDD8 Cascade Confers Specificity to Cullin Modification

Molecular cell, 2009-02, Vol.33 (4), p.483-495

2009

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Protective Effects of Transgenic Human Endothelial Protein C Receptor Expression in Murine Models of Transplantation

American journal of transplantation, 2012-09, Vol.12 (9), p.2363-2372

2012

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Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

Dielectric Reliability Study of 21 nm Pitch Interconnects with Barrierless Ru Fill

A New TDDB Reliability Prediction Methodology Accounting for Multiple SBD and Wear Out

Comphy — A compact-physics framework for unified modeling of BTI

A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF

Statistical insight into controlled forming and forming free stacks for HfOx RRAM

NBTI from the perspective of defect states with widely distributed time scales

The impact of plasma-charging damage on the RF performance of deep-submicron MOSFET

A Statistical Approach to Microdose Induced Degradation in FinFET Devices

Charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes

SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection

Evidence of a new degradation mechanism in high-k dielectrics at elevated temperatures

Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs

Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

Capping-metal gate integration technology for multiple-VT CMOS in MuGFETs

On the Recovery of Simulated Plasma Process Induced Damage in High- κ Dielectrics

TDDB Reliability Prediction Based on the Statistical Analysis of Hard Breakdown Including Multiple Soft Breakdown and Wear-out

Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectrics

Energy and Spatial Distribution of Traps in [Formula Omitted] nMOSFETs

Energy and Spatial Distribution of Traps in \hbox/\hbox\hbox nMOSFETs

Pig Thrombomodulin Binds Human Thrombin but Is a Poor Cofactor for Activation of Human Protein C and TAFI

E2-RING Expansion of the NEDD8 Cascade Confers Specificity to Cullin Modification

Protective Effects of Transgenic Human Endothelial Protein C Receptor Expression in Murine Models of Transplantation

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