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Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4355-4361

2022

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Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4161-4166

2017

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Modulation of Pb chemical state of epitaxial lead zirconate titanate thin films under high energy irradiation

Journal of applied physics, 2016-09, Vol.120 (11)

2016

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Highly Responsive ZnO/AlN/Si Heterostructure-Based Infrared- and Visible-Blind Ultraviolet Photodetectors With High Rejection Ratio

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1345-1352

2019

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Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

AIP advances, 2015-09, Vol.5 (9), p.097103-097103-11

2015

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Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

Journal of applied physics, 2014-11, Vol.116 (20)

2014

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Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures

APL materials, 2020-02, Vol.8 (2), p.020907-020907-11

2020

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Topological phenomena at the oxide interfaces

Materials for quantum technology, 2023-03, Vol.3 (1), p.12002

2023

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Solid-state synthesis of Pt/C cathode catalysts for direct methanol fuel cells

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-08, Vol.11 (32), p.1172-1181

2023

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Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

Applied physics letters, 2011-10, Vol.99 (16), p.162512-162512-3

2011

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Enhanced UV detection by non-polar epitaxial GaN films

AIP advances, 2015-12, Vol.5 (12), p.127208-127208-7

2015

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Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Journal of applied physics, 2011-11, Vol.110 (9), p.093718-093718-6

2011

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Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

Journal of applied physics, 2011-02, Vol.109 (4), p.44502-44502-5

2011

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Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

AIP advances, 2015-03, Vol.5 (3), p.037130-037130-12

2015

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Impact of Nitridation on Structural and Optical Properties of Epitaxial GaN Films Grown on M-Plane Sapphire by PAMBE

MRS proceedings, 2015, Vol.1736 (1), p.76-82, Article mrsf14-1736-t11-02

2015

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Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

Applied physics express, 2012-08, Vol.5 (8), p.85202

2012

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Temperature dependent transport behavior of n -InN nanodot / p -Si heterojunction structures

Applied physics letters, 2010-11, Vol.97 (20), p.202107-202107-3

2010

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Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

Journal of applied physics, 2011-12, Vol.110 (11), p.114317-114317-5

2011

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Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

Nanoscale research letters, 2011-11, Vol.6 (1), p.609-609, Article 609

2011

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Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector

Journal of physics. D, Applied physics, 2018-08, Vol.51 (37)

2018

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Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

Materials research bulletin, 2010-11, Vol.45 (11), p.1581-1585

2010

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Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

Physica status solidi. A, Applications and materials science, 2012-08, Vol.209 (8), p.1575-1578

2012

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Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

Journal of crystal growth, 2011, Vol.314 (1), p.5-8

2011

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High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

AIP advances, 2015-03, Vol.5 (3), p.037112-037112-9

2015

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Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide

Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer

Modulation of Pb chemical state of epitaxial lead zirconate titanate thin films under high energy irradiation

Highly Responsive ZnO/AlN/Si Heterostructure-Based Infrared- and Visible-Blind Ultraviolet Photodetectors With High Rejection Ratio

Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures

Topological phenomena at the oxide interfaces

Solid-state synthesis of Pt/C cathode catalysts for direct methanol fuel cells

Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

Enhanced UV detection by non-polar epitaxial GaN films

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

Impact of Nitridation on Structural and Optical Properties of Epitaxial GaN Films Grown on M-Plane Sapphire by PAMBE

Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

Temperature dependent transport behavior of n -InN nanodot / p -Si heterojunction structures

Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector

Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

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