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Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption

Scientific reports, 2019-10, Vol.9 (1), p.14268-5, Article 14268

2019

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Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review

Solar energy materials and solar cells, 2018-12, Vol.187, p.263-272

2018

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Defect luminescence from thermal donors in silicon: impact of dopant type and thermal donor concentration

2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2020, p.2652-2654

2020

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A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

Journal of applied physics, 2015-01, Vol.117 (4)

2015

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Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

Solar energy materials and solar cells, 2020-06, Vol.210, p.110481, Article 110481

2020

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Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

IEEE journal of photovoltaics, 2017-05, Vol.7 (3), p.735-740

2017

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Low Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon Wafers

Solid state phenomena, 2015-10, Vol.242, p.120-125

2015

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Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (4), p.n/a

2021

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Onset of ring defects in n-type Czochralski-grown silicon wafers

Journal of applied physics, 2020-04, Vol.127 (15)

2020

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Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

Journal of applied physics, 2014-06, Vol.115 (21)

2014

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Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells

Solar energy materials and solar cells, 2020-02, Vol.205, p.110287, Article 110287

2020

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Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

Journal of crystal growth, 2017-02, Vol.460, p.98-104

2017

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Constraints imposed by the sparse solar photon flux on upconversion and hot carrier solar cells

Solar energy, 2022-05, Vol.237, p.44-51

2022

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On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors

IEEE journal of photovoltaics, 2023-07, Vol.13 (4), p.524-534

2023

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Reassessment of the recombination properties of aluminium-oxygen complexes in n- and p-type Czochralski-grown silicon

Physica Status Solidi. B: Basic Solid State Physics, 2016-10, Vol.253 (10), p.2079-2084

2016

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Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

Journal of applied physics, 2015-08, Vol.118 (8)

2015

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Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy

Solar energy materials and solar cells, 2016-02, Vol.145 (Part 3), p.403-411

2016

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Influence of Annealing and Bulk Hydrogenation on Lifetime-Limiting Defects in Nitrogen-Doped Floating Zone Silicon

IEEE journal of photovoltaics, 2015-03, Vol.5 (2), p.495-498

2015

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Impact of Carrier Profile and Rear-Side Reflection on Photoluminescence Spectra in Planar Crystalline Silicon Wafers at Different Temperatures

IEEE journal of photovoltaics, 2015-01, Vol.5 (1), p.77-81

2015

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Light-activated surface passivation for more efficient silicon heterojunction solar cells: Origin, physics and stability

Solar energy materials and solar cells, 2024-06, Vol.269, p.112789, Article 112789

2024

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Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers

IEEE journal of photovoltaics, 2018-07, Vol.8 (4), p.990-996

2018

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Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Applied physics letters, 2012-01, Vol.100 (4), p.042110-042110-4

2012

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Heat Flow through Nonideal Contacts in Hot-Carrier Solar Cells

Physical review applied, 2023-09, Vol.20 (3), Article 034001

2023

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Micrometer-Scale Deep-Level Spectral Photoluminescence From Dislocations in Multicrystalline Silicon

IEEE journal of photovoltaics, 2015-05, Vol.5 (3), p.799-804

2015

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Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption

Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review

Defect luminescence from thermal donors in silicon: impact of dopant type and thermal donor concentration

A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

Low Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon Wafers

Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

Onset of ring defects in n-type Czochralski-grown silicon wafers

Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells

Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

Constraints imposed by the sparse solar photon flux on upconversion and hot carrier solar cells

On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors

Reassessment of the recombination properties of aluminium-oxygen complexes in n- and p-type Czochralski-grown silicon

Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy

Influence of Annealing and Bulk Hydrogenation on Lifetime-Limiting Defects in Nitrogen-Doped Floating Zone Silicon

Impact of Carrier Profile and Rear-Side Reflection on Photoluminescence Spectra in Planar Crystalline Silicon Wafers at Different Temperatures

Light-activated surface passivation for more efficient silicon heterojunction solar cells: Origin, physics and stability

Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Heat Flow through Nonideal Contacts in Hot-Carrier Solar Cells

Micrometer-Scale Deep-Level Spectral Photoluminescence From Dislocations in Multicrystalline Silicon

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