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Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review

Solar energy materials and solar cells, 2018-12, Vol.187, p.263-272

2018

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Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

Journal of applied physics, 2015-01, Vol.117 (4)

2015

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Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

Solar energy materials and solar cells, 2020-06, Vol.210, p.110481, Article 110481

2020

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Reassessing iron–gallium recombination activity in silicon

Journal of applied physics, 2024-04, Vol.135 (13)

2024

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Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (4), p.n/a

2021

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Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman

Journal of applied physics, 2018-12, Vol.124 (24)

2018

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Onset of ring defects in n-type Czochralski-grown silicon wafers

Journal of applied physics, 2020-04, Vol.127 (15)

2020

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Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

Journal of applied physics, 2014-06, Vol.115 (21)

2014

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Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon

Physica status solidi. PSS-RRL. Rapid research letters, 2016-06, Vol.10 (6), p.443-447

2016

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Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells

Solar energy materials and solar cells, 2020-02, Vol.205, p.110287, Article 110287

2020

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Generation and annihilation of boron-oxygen-related recombination centers in compensated p - and n -type silicon

Journal of applied physics, 2010-11, Vol.108 (10), p.103722-103722-9

2010

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Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption

Scientific reports, 2019-10, Vol.9 (1), p.14268-5, Article 14268

2019

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Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

Journal of crystal growth, 2017-02, Vol.460, p.98-104

2017

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Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing

AIP advances, 2023-03, Vol.13 (3), p.035325-035325-9

2023

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Constraints imposed by the sparse solar photon flux on upconversion and hot carrier solar cells

Solar energy, 2022-05, Vol.237, p.44-51

2022

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Defect luminescence from thermal donors in silicon: impact of dopant type and thermal donor concentration

2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2020, p.2652-2654

2020

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The Mechanism of Surface Passivation Degradation in SiO2/SiNx Stack Under Light and Elevated Temperature

IEEE journal of photovoltaics, 2021-11, Vol.11 (6), p.1380-1387

2021

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On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors

IEEE journal of photovoltaics, 2023-07, Vol.13 (4), p.524-534

2023

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Reassessment of the recombination properties of aluminium-oxygen complexes in n- and p-type Czochralski-grown silicon

Physica Status Solidi. B: Basic Solid State Physics, 2016-10, Vol.253 (10), p.2079-2084

2016

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Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Solar energy materials and solar cells, 2014-01, Vol.120, p.390-395

2014

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Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

Journal of applied physics, 2015-08, Vol.118 (8)

2015

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Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy

Solar energy materials and solar cells, 2016-02, Vol.145 (Part 3), p.403-411

2016

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Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

IEEE journal of photovoltaics, 2017-05, Vol.7 (3), p.735-740

2017

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Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review

Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

Reassessing iron–gallium recombination activity in silicon

Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation

Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman

Onset of ring defects in n-type Czochralski-grown silicon wafers

Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon

Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells

Generation and annihilation of boron-oxygen-related recombination centers in compensated p - and n -type silicon

Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption

Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing

Constraints imposed by the sparse solar photon flux on upconversion and hot carrier solar cells

Defect luminescence from thermal donors in silicon: impact of dopant type and thermal donor concentration

The Mechanism of Surface Passivation Degradation in SiO2/SiNx Stack Under Light and Elevated Temperature

On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors

Reassessment of the recombination properties of aluminium-oxygen complexes in n- and p-type Czochralski-grown silicon

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements

Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy

Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

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