UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Solar-Driven Photoelectrochemical Performance of Novel ZnO/Ag2WO4/AgBr Nanorods-Based Photoelectrodes

Nanoscale research letters, 2021-08, Vol.16 (1), p.133-133, Article 133

2021

Volltextzugriff (PDF)

Fabrication of semi-transparent SrTaO2N photoanodes with a GaN underlayer grown via atomic layer deposition

Green chemistry letters and reviews, 2022-07, Vol.15 (3), p.658-670

2022

Volltextzugriff (PDF)

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

The journal of physical chemistry letters, 2021-05, Vol.12 (17), p.4130-4133

2021

Volltextzugriff (PDF)

Chemical vapor deposition of metallic films using plasma electrons as reducing agents

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-05, Vol.38 (3)

2020

Volltextzugriff (PDF)

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-03, Vol.37 (2)

2019

Volltextzugriff (PDF)

Area selective deposition of iron films using temperature sensitive masking materials and plasma electrons as reducing agents

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-07, Vol.39 (4)

2021

Volltextzugriff (PDF)

Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and water

Dalton transactions : an international journal of inorganic chemistry, 2022-03, Vol.51 (12), p.4712-4719

2022

Volltextzugriff (PDF)

Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminum

Journal of physical chemistry. C, 2020-07, Vol.124 (26), p.14176-14181

2020

Volltextzugriff (PDF)

Thermal atomic layer deposition of In 2 O 3 thin films using a homoleptic indium triazenide precursor and water

Dalton transactions : an international journal of inorganic chemistry, 2022-03, Vol.51 (12), p.4712-4719

2022

Volltextzugriff (PDF)

Surface ligand removal in atomic layer deposition of GaN using triethylgallium

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-01, Vol.39 (1)

2021

Volltextzugriff (PDF)

Time-Resolved CVD of Group 13-Nitrides

Rouf, Polla

2021

Volltextzugriff (PDF)

In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

Chemistry of materials, 2020-06, Vol.32 (11), p.4481-4489

2020

Volltextzugriff (PDF)

Solar-Driven Photoelectrochemical Performance of Novel ZnO/Ag 2 WO 4 /AgBr Nanorods-Based Photoelectrodes

Nanoscale research letters, 2021-08, Vol.16 (1), p.133

2021

Volltextzugriff (PDF)

Homogeneous high In content InxGa1−x N films by supercycle atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-12, Vol.40 (6)

2022

Volltextzugriff (PDF)

In0.5Ga0.5N layers by atomic layer deposition

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021, Vol.9 (38), p.13077-13080

2021

Volltextzugriff (PDF)

Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

Chemistry of materials, 2021-05, Vol.33 (9), p.3266-3275

2021

Volltextzugriff (PDF)

Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design

Inorganic chemistry, 2021-08, Vol.60 (15), p.11025-11031

2021

Volltextzugriff (PDF)

The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films

Journal of physical chemistry. C, 2019-10, Vol.123 (42), p.25691-25700

2019

Volltextzugriff (PDF)

Fabrication of semi-transparent SrTaO 2 N photoanodes with a GaN underlayer grown via atomic layer deposition

Green chemistry letters and reviews, 2022-07, Vol.15 (3), p.658-670

2022

Volltextzugriff (PDF)

Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

Journal of physical chemistry. C, 2019-03, Vol.123 (11), p.6701-6710

2019

Volltextzugriff (PDF)

In 0.5 Ga 0.5 N layers by atomic layer deposition

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-10, Vol.9 (38), p.13077-13080

2021

Volltextzugriff (PDF)

InGaN layers by atomic layer deposition

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-10, Vol.9 (38), p.1377-138

2021

Volltextzugriff (PDF)

Epitaxial GaN using Ga(NMe 2 ) 3 and NH 3 plasma by atomic layer deposition

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-07, Vol.8 (25), p.8457-8465

2020

Volltextzugriff (PDF)

Epitaxial GaN using Ga(NMe) and NH plasma by atomic layer deposition

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-07, Vol.8 (25), p.8457-8465

2020

Volltextzugriff (PDF)

Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (25), p.8457-8465

2020

Volltextzugriff (PDF)

1 – 25 von 26

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(24)
Mit Volltextzugriff
(25)

Publikationsform

Artikel
(25)
Dissertationen
(1)

Sprache

Englisch
(24)

Erscheinungsjahr

n.n

Thema

Physical Sciences
(17)
Science & Technology
(17)
Materials Science
(14)
Technology
(14)
Chemistry
(10)
Materials Science, Multidisciplinary
(9)
Physics
(9)
Physics, Applied
(8)
Chemistry, Physical
(6)
Science & Technology - Other Topics
(6)
Materials Science, Coatings & Films
(5)
Nanoscience & Nanotechnology
(5)
Atomic Layer Epitaxy
(4)
Heterojunction
(3)
Thin Films
(3)
Atomschichtabscheidung
(2)
Chemical Vapor Deposition
(2)
Chemistry, Inorganic & Nuclear
(2)
Elektronikgerät
(2)
Gallium
(2)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Solar-Driven Photoelectrochemical Performance of Novel ZnO/Ag2WO4/AgBr Nanorods-Based Photoelectrodes

Fabrication of semi-transparent SrTaO2N photoanodes with a GaN underlayer grown via atomic layer deposition

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Chemical vapor deposition of metallic films using plasma electrons as reducing agents

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Area selective deposition of iron films using temperature sensitive masking materials and plasma electrons as reducing agents

Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and water

Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminum

Thermal atomic layer deposition of In 2 O 3 thin films using a homoleptic indium triazenide precursor and water

Surface ligand removal in atomic layer deposition of GaN using triethylgallium

Time-Resolved CVD of Group 13-Nitrides

In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

Solar-Driven Photoelectrochemical Performance of Novel ZnO/Ag 2 WO 4 /AgBr Nanorods-Based Photoelectrodes

Homogeneous high In content InxGa1−x N films by supercycle atomic layer deposition

In0.5Ga0.5N layers by atomic layer deposition

Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design

The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films

Fabrication of semi-transparent SrTaO 2 N photoanodes with a GaN underlayer grown via atomic layer deposition

Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

In 0.5 Ga 0.5 N layers by atomic layer deposition

InGaN layers by atomic layer deposition

Epitaxial GaN using Ga(NMe 2 ) 3 and NH 3 plasma by atomic layer deposition

Epitaxial GaN using Ga(NMe) and NH plasma by atomic layer deposition

Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition

Suchergebnisse filtern