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Blueshifting of InGaAsP-InP laser diodes using a low-energy ion-implantation technique: comparison between strained and lattice-matched quantum-well structures

IEEE journal of selected topics in quantum electronics, 1998-07, Vol.4 (4), p.741-745

1998

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Growth of quantum wire structures by selective area chemical beam epitaxy

Journal of crystal growth, 1996-03, Vol.160 (3), p.220-228

1996

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Efficient difference-frequency mixing of diode lasers in lithium niobate channel waveguides

Applied physics. B, Lasers and optics, 2000-06, Vol.70 (6), p.777-782

2000

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Thermally induced In/Ga interdiffusion in InxGa1−xAs/GaAs strained single quantum well grown by LPMOVPE

Journal of crystal growth, 1988, Vol.93 (1-4), p.336-341

1988

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Tin incorporation in GaAs layers grown by low pressure MOVPE

Journal of crystal growth, 1984-09, Vol.68 (1), p.65-70

1984

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Structural characterization of InGaAs/GaAs superlattices grown on misoriented substrates

Journal of crystal growth, 1992-03, Vol.118 (1), p.117-124

1992

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Absorption edge shift in ZnO thin films at high carrier densities

Solid state communications, 1981-01, Vol.39 (12), p.1269-1271

1981

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3.1 × 105 cm2/Vs peak electron mobilities in InP grown by chemical beam epitaxy

Electronics letters, 1993, Vol.29 (4), p.373-375

1993

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Effects of longitudinal electric fields on the binding energy of excitons in shallow InGaAs-GaAs quantum wells

Solid state communications, 1991, Vol.80 (10), p.811-815

1991

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Structural Defects in Partially Relaxed InGaAs Layers

MRS proceedings, 1993, Vol.325, Article 217

1993

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Chemical beam epitaxy of InP on planar and non-planar substrates

Journal of crystal growth, 1994-03, Vol.136 (1), p.179-185

1994

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Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE

Journal of crystal growth, 1992-05, Vol.120 (1), p.212-217

1992

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Acceptor and exciton states in [formula omitted] strained quantum wells

Superlattices and microstructures, 1989, Vol.6 (3), p.315-318

1989

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Raman Scattering from InGaAs/GaAs strained-layer superlattices

Solid state communications, 1988-10, Vol.68 (2), p.211-214

1988

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Optical properties of CdTe- Cd0.90Mn0.10Te multiple quantum well structures grown by pulsed laser evaporation and epitaxy

Journal of crystal growth, 1992-02, Vol.117 (1), p.862-866

1992

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Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substrates

Journal of crystal growth, 1991-09, Vol.113 (3), p.379-384

1991

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Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe

MRS proceedings, 1989, Vol.160, Article 783

1989

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Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods

Surface science, 1990-04, Vol.228 (1), p.347-350

1990

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Relaxation effect on X-ray rocking curves of InGaAs/GaAs strained layer superlattices

Solid state communications, 1990-05, Vol.74 (7), p.571-575

1990

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Electric Field Effects on the Optical Properties of In x Ga 1-x As/GaAs Strained Quantum Wells and Superlattices

MRS proceedings, 1989, Vol.160, Article 667

1989

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Electric Field Effects on the Optical Properties of InxGa1-xAs/GaAs Strained Quantum Wells and Superlattices

MRS proceedings, 1989, Vol.160

1989

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Efficient channel waveguide device for difference-frequency mixing of diode lasers

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013), 1999, p.229-230

1999

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Characterization of Ga xIn 1− xAs/GaAs heterostructures grown by low pressure MOVPE

Journal of crystal growth, 1986, Vol.77 (1), p.571-578

1986

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Low-pressure MOVPE growth of Sn-doped GaAs

Electronics letters, 1983-01, Vol.19 (25-26), p.1062-1064

1983

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Type-I and type-II Stark ladders in an InGaAs/GaAs superlattice

Superlattices and microstructures, 1993-09, Vol.14 (2-3), p.199-203

1993

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Blueshifting of InGaAsP-InP laser diodes using a low-energy ion-implantation technique: comparison between strained and lattice-matched quantum-well structures

Growth of quantum wire structures by selective area chemical beam epitaxy

Efficient difference-frequency mixing of diode lasers in lithium niobate channel waveguides

Thermally induced In/Ga interdiffusion in InxGa1−xAs/GaAs strained single quantum well grown by LPMOVPE

Tin incorporation in GaAs layers grown by low pressure MOVPE

Structural characterization of InGaAs/GaAs superlattices grown on misoriented substrates

Absorption edge shift in ZnO thin films at high carrier densities

3.1 × 105 cm2/Vs peak electron mobilities in InP grown by chemical beam epitaxy

Effects of longitudinal electric fields on the binding energy of excitons in shallow InGaAs-GaAs quantum wells

Structural Defects in Partially Relaxed InGaAs Layers

Chemical beam epitaxy of InP on planar and non-planar substrates

Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE

Acceptor and exciton states in [formula omitted] strained quantum wells

Raman Scattering from InGaAs/GaAs strained-layer superlattices

Optical properties of CdTe- Cd0.90Mn0.10Te multiple quantum well structures grown by pulsed laser evaporation and epitaxy

Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substrates

Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe

Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods

Relaxation effect on X-ray rocking curves of InGaAs/GaAs strained layer superlattices

Electric Field Effects on the Optical Properties of In x Ga 1-x As/GaAs Strained Quantum Wells and Superlattices

Electric Field Effects on the Optical Properties of InxGa1-xAs/GaAs Strained Quantum Wells and Superlattices

Efficient channel waveguide device for difference-frequency mixing of diode lasers

Characterization of Ga xIn 1− xAs/GaAs heterostructures grown by low pressure MOVPE

Low-pressure MOVPE growth of Sn-doped GaAs

Type-I and type-II Stark ladders in an InGaAs/GaAs superlattice

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