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Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures

AIP advances, 2024-04, Vol.14 (4), p.045122-045122-6

2024

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Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency

Physical review letters, 2005-09, Vol.95 (12), p.127402.1-127402.4, Article 127402

2005

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Lattice-matched AlInN in the initial stage of growth

Applied physics letters, 2014-04, Vol.104 (16)

2014

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Indium incorporation into InGaN: The role of the adlayer

Journal of crystal growth, 2017-04, Vol.464, p.112-118

2017

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Strong enhancement of Eu+3 luminescence in europium-implanted GaN by Si and Mg codoping

Applied physics letters, 2013-02, Vol.102 (6)

2013

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Auger recombination in GaInN/GaN quantum well laser structures

Applied physics letters, 2011-07, Vol.99 (3), p.031106-031106-3

2011

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Growth kinetics and island evolution during double-pulsed molecular beam epitaxy of InN

Journal of applied physics, 2016-06, Vol.119 (23)

2016

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Composition dependence of polarization fields in GaInN/GaN quantum wells

Applied physics letters, 2003-08, Vol.83 (6), p.1169-1171

2003

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Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices

Physica Status Solidi. B: Basic Solid State Physics, 2016-01, Vol.253 (1), p.84-92

2016

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Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

Applied physics letters, 2013-04, Vol.102 (13)

2013

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Growth and characterization of InGaN by RF-MBE

Journal of crystal growth, 2011-05, Vol.323 (1), p.72-75

2011

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Intentional anisotropic strain relaxation in (112¯2) oriented Al1−xInxN one-dimensionally lattice matched to GaN

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Adapting epicutaneous patch testing protocols to assess immediate‐type skin reactions

International journal of cosmetic science, 2020-08, Vol.42 (4), p.328-335

2020

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Effects of spontaneous polarization on GaInN/GaN quantum well structures

Journal of applied physics, 2011-06, Vol.109 (12), p.123710-123710-9

2011

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Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes

Applied physics letters, 2006-02, Vol.88 (7)

2006

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Correlated terahertz acoustic and electromagnetic emission in dynamically screened InGaN/GaN quantum wells

Physical review. B, Condensed matter and materials physics, 2011-08, Vol.84 (8), Article 085317

2011

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Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Applied physics letters, 2011-07, Vol.99 (1), p.011901-011901-3

2011

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Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells

Journal of crystal growth, 2015-03, Vol.414, p.49-55

2015

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Dielectric function and bowing parameters of InGaN alloys

physica status solidi (b), 2012-03, Vol.249 (3), p.485-488

2012

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Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures

Physica Status Solidi (b), 2011-03, Vol.248 (3), p.627-631

2011

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Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties

Semiconductor science and technology, 2012-02, Vol.27 (2), p.024013

2012

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Optical Characterization of Porous Materials

Physica status solidi. A, Applied research, 2001-03, Vol.184 (1), p.51-78

Rossow, U.

2001

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Towards understanding the emission efficiency of nitride quantum wells

Physica status solidi. A, Applied research, 2004-09, Vol.201 (12), p.2808-2813

2004

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X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

Physica Status Solidi (b), 2011-03, Vol.248 (3), p.616-621

2011

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Depolarization/mixed polarization corrections of ellipsometry spectra

Thin solid films, 1998-02, Vol.313 (1-2), p.97-101

Rossow, U.

1998

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Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures

Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency

Lattice-matched AlInN in the initial stage of growth

Indium incorporation into InGaN: The role of the adlayer

Strong enhancement of Eu+3 luminescence in europium-implanted GaN by Si and Mg codoping

Auger recombination in GaInN/GaN quantum well laser structures

Growth kinetics and island evolution during double-pulsed molecular beam epitaxy of InN

Composition dependence of polarization fields in GaInN/GaN quantum wells

Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices

Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

Growth and characterization of InGaN by RF-MBE

Intentional anisotropic strain relaxation in (112¯2) oriented Al1−xInxN one-dimensionally lattice matched to GaN

Adapting epicutaneous patch testing protocols to assess immediate‐type skin reactions

Effects of spontaneous polarization on GaInN/GaN quantum well structures

Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes

Correlated terahertz acoustic and electromagnetic emission in dynamically screened InGaN/GaN quantum wells

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells

Dielectric function and bowing parameters of InGaN alloys

Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures

Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties

Optical Characterization of Porous Materials

Towards understanding the emission efficiency of nitride quantum wells

X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

Depolarization/mixed polarization corrections of ellipsometry spectra

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