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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors

Journal of applied physics, 2022-12, Vol.132 (24), p.244303

2022

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Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Applied physics letters, 2018-12, Vol.113 (23)

2018

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Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

IEEE electron device letters, 2020-06, Vol.41 (6), p.828-831

2020

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A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

IEEE transactions on microwave theory and techniques, 2013-02, Vol.61 (2), p.922-930

2013

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High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

Scientific reports, 2017-05, Vol.7 (1), p.2419-7, Article 2419

2017

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Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

IEEE electron device letters, 2015-06, Vol.36 (6), p.537-539

2015

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Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. 113, 041605 (2018)]

Applied physics letters, 2018-08, Vol.113 (7)

2018

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A power detector based on GaN high-electron-mobility transistors for a gigabit on-off keying demodulator at 90 GHz

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD19

2019

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Observations of very fast electron traps at SiC/high-κ dielectric interfaces

APL materials, 2023-11, Vol.11 (11), p.111121-111121-7

2023

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Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

IEEE electron device letters, 2015-03, Vol.36 (3), p.235-237

2015

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Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.393-399

2021

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Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2204-2206

2011

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Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise Amplifiers

IEEE microwave and wireless components letters, 2016-01, Vol.26 (1), p.31-33

2016

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Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2297-2303

2020

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Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs

2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS), 2024, p.1-4

2024

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Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

IEEE transactions on electron devices, 2018-03, Vol.65 (3), p.908-914

2018

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High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a "Buffer-Free" Heterostructure

IEEE electron device letters, 2022-05, Vol.43 (5), p.781-784

2022

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Low Al-content n-type Al x Ga 1 − x N layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Vacuum, 2023-11, Vol.217, p.112481, Article 112481

2023

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Investigation of Isolation Approaches and the Stoichiometry of SiN x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Scientific reports, 2017-02, Vol.7 (1), p.41828-41828, Article 41828

2017

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Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.364-371

2019

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Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Vacuum, 2023-11, Vol.217, Article 112481

2023

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Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2446-2453

2018

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Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8)

2023

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A GaN–SiC hybrid material for high-frequency and power electronics

Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. 113, 041605 (2018)]

A power detector based on GaN high-electron-mobility transistors for a gigabit on-off keying demodulator at 90 GHz

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise Amplifiers

Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a "Buffer-Free" Heterostructure

Low Al-content n-type Al x Ga 1 − x N layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Investigation of Isolation Approaches and the Stoichiometry of SiN x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

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