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Universal tunneling behavior in technologically relevant P/N junction diodes

Journal of applied physics, 2004-05, Vol.95 (10), p.5800-5812

2004

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Impurity measurements in silicon with D-SIMS and atom probe tomography

Applied surface science, 2008-12, Vol.255 (4), p.1547-1550

2008

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Depth profiling of emerging materials for semiconductor devices

Applied surface science, 2006-07, Vol.252 (19), p.7201-7204

Ronsheim, P.A.

2006

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Mapping of electrostatic potential in deep submicron CMOS devices by electron holography

Physical review letters, 2002-07, Vol.89 (2), p.025502-025502, Article 025502

2002

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High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation

Applied physics letters, 2002-10, Vol.81 (16), p.2956-2958

2002

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Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

Microelectronic engineering, 2011-07, Vol.88 (7), p.1349-1352

2011

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Quantitative analysis of one-dimensional dopant profile by electron holography

Applied physics letters, 2002-04, Vol.80 (17), p.3213-3215

2002

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Electron Holography of CMOS Devices with Epitaxial Layers

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.252-253

2014

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Threshold voltage control in NiSi-gated MOSFETs through SIIS

IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.39-46

2005

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Pulsed-laser atom probe tomography of p -type field effect transistors on Si-on-insulator substrates

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-11, Vol.29 (6)

2011

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Central Prolactin Infusions Stimulate Maternal Behavior in Steroid-Treated, Nulliparous Female Rats

Proceedings of the National Academy of Sciences - PNAS, 1990-10, Vol.87 (20), p.8003-8007

1990

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Impurity Measurments in Polycrystallline Material with Atom Probe Tomography

Microscopy and microanalysis, 2009-07, Vol.15 (S2), p.276-277

2009

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Strained Si CMOS (SS CMOS) technology: opportunities and challenges

Solid-state electronics, 2003-07, Vol.47 (7), p.1133-1139

2003

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Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers

Applied surface science, 2004-06, Vol.231, p.762-767

2004

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Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers

Applied surface science, 2004, Vol.231-32, p.762-767

2004

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Towards Routine Backside SIMS Sample Preparation for Efficient Support of Advanced IC Process Development

2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, 2009, Vol.1173, p.94-98

2009

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Dopant measurements in semiconductors with atom probe tomography

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.C1-C1E4

2010

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Identification and Analysis of Fluorine Clustering in Boron Implants

Microscopy and microanalysis, 2008-08, Vol.14 (S2), p.1250-1251

2008

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Atom-Probe Tomography of Semiconductor Materials and Device Structures

MRS bulletin, 2009-10, Vol.34 (10), p.738-743

2009

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Round-robin study of arsenic implant dose measurement in silicon by SIMS

Applied surface science, 2006-07, Vol.252 (19), p.7232-7235

2006

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Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs

IEEE electron device letters, 1993-08, Vol.14 (8), p.409-411

1993

Volltextzugriff (PDF)

Expression of Fos within luteinizing hormone-releasing hormone neurons, in relation to the steroid-induced luteinizing hormone surge in guinea pigs

Biology of reproduction, 1998-02, Vol.58 (2), p.316-322

1998

Volltextzugriff (PDF)

Probing the Interface Barriers of Dopant-Segregated Silicide-Si Diodes With Internal Photoemission

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2027-2032

2012

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Electron holography of Si:C films and Si:C-based devices

Journal of applied physics, 2011-09, Vol.110 (6), p.063522-063522-6

2011

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Prolactin (PRL) regulation of maternal behavior in rats: bromocriptine treatment delays and PRL promotes the rapid onset of behavior

Endocrinology (Philadelphia), 1990-02, Vol.126 (2), p.837-848

1990

Volltextzugriff (PDF)

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Universal tunneling behavior in technologically relevant P/N junction diodes

Impurity measurements in silicon with D-SIMS and atom probe tomography

Depth profiling of emerging materials for semiconductor devices

Mapping of electrostatic potential in deep submicron CMOS devices by electron holography

High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation

Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

Quantitative analysis of one-dimensional dopant profile by electron holography

Electron Holography of CMOS Devices with Epitaxial Layers

Threshold voltage control in NiSi-gated MOSFETs through SIIS

Pulsed-laser atom probe tomography of p -type field effect transistors on Si-on-insulator substrates

Central Prolactin Infusions Stimulate Maternal Behavior in Steroid-Treated, Nulliparous Female Rats

Impurity Measurments in Polycrystallline Material with Atom Probe Tomography

Strained Si CMOS (SS CMOS) technology: opportunities and challenges

Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers

Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers

Towards Routine Backside SIMS Sample Preparation for Efficient Support of Advanced IC Process Development

Dopant measurements in semiconductors with atom probe tomography

Identification and Analysis of Fluorine Clustering in Boron Implants

Atom-Probe Tomography of Semiconductor Materials and Device Structures

Round-robin study of arsenic implant dose measurement in silicon by SIMS

Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs

Expression of Fos within luteinizing hormone-releasing hormone neurons, in relation to the steroid-induced luteinizing hormone surge in guinea pigs

Probing the Interface Barriers of Dopant-Segregated Silicide-Si Diodes With Internal Photoemission

Electron holography of Si:C films and Si:C-based devices

Prolactin (PRL) regulation of maternal behavior in rats: bromocriptine treatment delays and PRL promotes the rapid onset of behavior

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