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Performance Improvement of GaN-Based Light-Emitting Diodes With a Microhole Array, 45° Sidewalls, and a SiO2 Nanoparticle/Microsphere Passivation Layer

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.505-511

2019

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Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode

International journal of hydrogen energy, 2018-10, Vol.43 (42), p.19816-19824

2018

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On an indium–tin-oxide thin film based ammonia gas sensor

Sensors and actuators. B, Chemical, 2011-12, Vol.160 (1), p.1481-1484

2011

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Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.4079-4086

2011

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Pd-oxide- Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

IEEE sensors journal, 2006-04, Vol.6 (2), p.287

2006

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Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2282-2289

2013

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Effects of the Use of an Aluminum Reflecting and an Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2282-2289

2013

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On a heterostructure field-effect transistor (HFET) based hydrogen sensing system

International journal of hydrogen energy, 2011-12, Vol.36 (24), p.15906-15912

2011

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Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.1963-1971

2004

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Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

IEEE transactions on electron devices, 2003-08, Vol.50 (8), p.1717-1723

2003

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On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance

Sensors and actuators. B, Chemical, 2007-07, Vol.125 (1), p.22-29

2007

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Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)

Semiconductor science and technology, 2004-01, Vol.19 (1), p.87-92

2004

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DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.874-879

2003

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Effect of Formal Passivations on Temperature-Dependent Characteristics of High Electron Mobility Transistors

Journal of the Electrochemical Society, 2007, Vol.154 (3), p.H134

2007

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Influence of Emitter-Edge-Thinning Thickness on the Heterojunction Bipolar Transistor Performance

Journal of the Electrochemical Society, 2007, Vol.154 (4), p.H289

2007

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Investigation of temperature-dependent characteristics of an n+-InGaAs/n-GaAs composite doped channel HFET

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2677

2001

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Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Applied physics letters, 2001-08, Vol.79 (7), p.967-969

2001

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Pd-oxide- Al/sub 0.24/Ga/sub 0.76/As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

IEEE sensors journal, 2006-04, Vol.6 (2), p.287-292

2006

Volltextzugriff (PDF)

Performance Improvement of GaN-Based Light-Emitting Diodes With a Microhole Array, 45° Sidewalls, and a SiO 2 Nanoparticle/Microsphere Passivation Layer

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.505-511

2019

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Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures

Semiconductor science and technology, 2002-01, Vol.17 (1), p.87-92

2002

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Performance modeling and analysis of load balancing policies with priority queueing

The Journal of systems and software, 1993, Vol.20 (2), p.169-187

1993

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On the high-performance Ti-salicide ULSI CMOS devices prepared by a borderless contact technique and double-implant structure

Semiconductor science and technology, 2002-03, Vol.17 (3), p.205-210

2002

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Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

Microelectronics and reliability, 1998-03, Vol.38 (3), p.367-372

1998

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Application of a triple-well superlattice emitter structure to GaAs switching device

Journal of applied physics, 1992-11, Vol.72 (9), p.4414-4416

1992

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Modeling the DC performance of heterostructure-emitter bipolar transistor

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992-08, Vol.31 (8), p.2388-2393

1992

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Performance Improvement of GaN-Based Light-Emitting Diodes With a Microhole Array, 45° Sidewalls, and a SiO2 Nanoparticle/Microsphere Passivation Layer

Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode

On an indium–tin-oxide thin film based ammonia gas sensor

Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach

Pd-oxide- Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface

Effects of the Use of an Aluminum Reflecting and an Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface

On a heterostructure field-effect transistor (HFET) based hydrogen sensing system

Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs

Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance

Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)

DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

Effect of Formal Passivations on Temperature-Dependent Characteristics of High Electron Mobility Transistors

Influence of Emitter-Edge-Thinning Thickness on the Heterojunction Bipolar Transistor Performance

Investigation of temperature-dependent characteristics of an n+-InGaAs/n-GaAs composite doped channel HFET

Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Pd-oxide- Al/sub 0.24/Ga/sub 0.76/As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

Performance Improvement of GaN-Based Light-Emitting Diodes With a Microhole Array, 45° Sidewalls, and a SiO 2 Nanoparticle/Microsphere Passivation Layer

Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures

Performance modeling and analysis of load balancing policies with priority queueing

On the high-performance Ti-salicide ULSI CMOS devices prepared by a borderless contact technique and double-implant structure

Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)

Application of a triple-well superlattice emitter structure to GaAs switching device

Modeling the DC performance of heterostructure-emitter bipolar transistor

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