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Structure of initial Ge nanoclusters at the edges of Si(1 1 1) steps with the front in the 〈-1 -1 2〉 direction

Journal of crystal growth, 2014-10, Vol.404, p.39-43

2014

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Quantitative characterization of the ionic mobility and concentration in Li-battery cathodes via low frequency electrochemical strain microscopy

Nanoscale, 2018-01, Vol.10 (5), p.2503-2511

2018

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Formation of self-assembled pattern of glycine microcrystals: experiment and computer simulation

Ferroelectrics, 2016-05, Vol.496 (1), p.20-27

2016

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Local electronic transport across probe/ionic conductor interface in scanning probe microscopy

Ultramicroscopy, 2021-01, Vol.220, p.113147-113147, Article 113147

2021

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Formation of Inert Bi2Se3(0001) Cleaved Surface

Crystal growth & design, 2011-12, Vol.11 (12), p.5507-5514

2011

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Surface morphology of Ge layers epitaxially grown on bare and oxidized Si(001) and Si(111) substrates

Surface science, 2014-07, Vol.625, p.50-56

2014

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Inertness and degradation of (0001) surface of Bi2Se3 topological insulator

Journal of applied physics, 2012-12, Vol.112 (11)

2012

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Calibration of the in-plane PFM response by the lateral force curves

Ferroelectrics, 2020-04, Vol.559 (1), p.15-21

2020

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Structure and stability of Ge cluster on Si(111) surface in the presence of Bi surfactant

Surface science, 2013-11, Vol.617, p.68-72

2013

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Orientation and structure of triple step staircase on vicinal Si(1 1 1) surfaces

Surface science, 2006-11, Vol.600 (21), p.4878-4882

2006

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Stability of the (0001) surface of the Bi2Se3 topological insulator

JETP letters, 2011-11, Vol.94 (6), p.465-468

2011

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Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface

JETP letters, 2011-11, Vol.94 (6), p.442-445

2011

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Theoretical and experimental determination of the initial stage of plastic relaxation of misfit stresses in a (111) substrate-film islands heterosystem

Bulletin of the Russian Academy of Sciences. Physics, 2012-03, Vol.76 (3), p.374-377

2012

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Crystal growth of Bi2Te3 and noble cleaved (0001) surface properties

Journal of solid state chemistry, 2016-04, Vol.236, p.203-208

2016

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Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces

Bulletin of the Russian Academy of Sciences. Physics, 2012-03, Vol.76 (3), p.325-327

2012

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Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

Materials science in semiconductor processing, 2018-08, Vol.83, p.107-114

2018

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Quantitative characterization of the ionic mobility and concentration in Li-battery cathodes via low frequency electrochemical strain microscopyElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr08001h

2018-02

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Surface morphology of Ge layers epitaxially grown on bare and oxidized Si(001) and Si(111) substrates

Surface science, 2014, Vol.625, p.50-56

2014

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Structure and stability of Ge cluster on Si(111) surface in the presence of Bi surfactant

Surface science, 2013, Vol.617, p.68-72

2013

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Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

Physics of the solid state, 2004-01, Vol.46 (1), p.80-84

2004

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Formation of Ge clusters at a Si(111)-Bi- $\sqrt 3 \times \sqrt 3$ surface

JETP letters, 2011-08, Vol.93 (11), p.661-666

2011

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Causes of the stability of three-bilayer islands and steps on a Si (111) surface

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (8), p.967-977

2005

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Formation of Inert Bi 2 Se 3 (0001) Cleaved Surface

Crystal growth & design, 2011-12, Vol.11 (12), p.5507-5514

2011

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Formation of Ge clusters at a Si(111)-Bi- surface

JETP letters, 2011, Vol.93 (11)

2011

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Formation of Inert Bi2Se3(0001 ) Cleaved Surface

Crystal growth & design, 2011, Vol.11 (12), p.5507-5514

2011

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Structure of initial Ge nanoclusters at the edges of Si(1 1 1) steps with the front in the 〈-1 -1 2〉 direction

Quantitative characterization of the ionic mobility and concentration in Li-battery cathodes via low frequency electrochemical strain microscopy

Formation of self-assembled pattern of glycine microcrystals: experiment and computer simulation

Local electronic transport across probe/ionic conductor interface in scanning probe microscopy

Formation of Inert Bi2Se3(0001) Cleaved Surface

Surface morphology of Ge layers epitaxially grown on bare and oxidized Si(001) and Si(111) substrates

Inertness and degradation of (0001) surface of Bi2Se3 topological insulator

Calibration of the in-plane PFM response by the lateral force curves

Structure and stability of Ge cluster on Si(111) surface in the presence of Bi surfactant

Orientation and structure of triple step staircase on vicinal Si(1 1 1) surfaces

Stability of the (0001) surface of the Bi2Se3 topological insulator

Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface

Theoretical and experimental determination of the initial stage of plastic relaxation of misfit stresses in a (111) substrate-film islands heterosystem

Crystal growth of Bi2Te3 and noble cleaved (0001) surface properties

Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces

Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

Quantitative characterization of the ionic mobility and concentration in Li-battery cathodes via low frequency electrochemical strain microscopyElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr08001h

Surface morphology of Ge layers epitaxially grown on bare and oxidized Si(001) and Si(111) substrates

Structure and stability of Ge cluster on Si(111) surface in the presence of Bi surfactant

Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

Formation of Ge clusters at a Si(111)-Bi- $\sqrt 3 \times \sqrt 3$ surface

Causes of the stability of three-bilayer islands and steps on a Si (111) surface

Formation of Inert Bi 2 Se 3 (0001) Cleaved Surface

Formation of Ge clusters at a Si(111)-Bi- surface

Formation of Inert Bi2Se3(0001 ) Cleaved Surface

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