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High-Temperature Sensitivity of a Depletion-Mode AlGaN/GaN MIS-HEMT

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5695-5700

2021

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Efficient Temperature Sensor Based on SOI Gate-All-Around Electrostatically Formed Nanowire Transistor

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3549-3553

2019

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Modeling a Floating-Gate Memristive Device for Computer Aided Design of Neuromorphic Computing

2020 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2020, p.472-477

2020

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A monolithic 180 nm CMOS dosimeter for wireless In Vivo Dosimetry

Radiation measurements, 2016-01, Vol.84, p.55-64

2016

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Non-volatile memory transistor based on Pt nanocrystals with negative differencial resistance

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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A monolithic 180 nm CMOS dosimeter for In Vivo Dosimetry medical application

Radiation measurements, 2014-12, Vol.71, p.389-391

2014

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The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2―HfO2 stacks and Au nanocrystals

Microelectronic engineering, 2011-06, Vol.88 (6), p.964-968

2011

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Bipolar charge transport and contact phenomena in Al2O3

Thin solid films, 2023-09, Vol.781, p.140004, Article 140004

2023

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A 0.18μm CMOS low-power radiation sensor for UWB wireless transmission

Journal of instrumentation, 2012-12, Vol.7 (12), p.1-8, Article C12019

2012

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Radiation effects in nitride read-only memories

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1857-1860

2010

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Peculiarities of hole trapping in Al2O3-SiO2 gate dielectric stack

Microelectronics and reliability, 2017-12, Vol.79, p.265-269

2017

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Peculiarities of hole trapping in Al 2 O 3 -SiO 2 gate dielectric stack

Microelectronics and reliability, 2017-12, Vol.79, p.265-269

2017

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The nature of HT V/sub t/ shift in NROM memory transistors

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.304-313

2006

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Monolithic 180 nm CMOS Dosimeter for In Vivo Medical Applications

IEEE transactions on nuclear science, 2013-04, Vol.60 (2), p.843-849

2013

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Modeling a floating-gate memristive device for computer aided design of neuromorphic computing

Proceedings of the 23rd Conference on Design, Automation and Test in Europe, 2020, p.472-477

2020

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Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

Applied physics letters, 2011-05, Vol.98 (21)

2011

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Behaviour of injected electrons in high- k dielectric layers

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.985-988

2006

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The effect of deposition process parameters and post-deposition treatments on the poly- and amorphous-silicon morphology

Applied surface science, 2002-03, Vol.188 (3), p.539-544

2002

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Ionizing Radiation Effects on Non Volatile Read Only Memory Cells

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3016-3020

2012

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Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2597-2602

2012

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Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

Journal of applied physics, 2013-02, Vol.113 (7)

2013

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Silicon nano-asperities: Morphological evolution and electrical properties of double-polysilicon interlayers

Journal of electronic materials, 2004-07, Vol.33 (7), p.819-825

2004

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Optical properties of nonvolatile memory capacitors based on gold nanoparticles and SiO2–HfO2 sublayers

Applied physics letters, 2011-01, Vol.98 (2)

2011

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Profiling of deep traps in silicon oxide–nitride–oxide structures

Thin solid films, 2005, Vol.471 (1), p.166-169

2005

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Nonvolatile low-voltage memory transistor based on SiO 2 tunnelingand HfO 2 blocking layers with charge storage in Au nanocrystals

Applied physics letters, 2011-05, Vol.98 (21), p.212902-212902-3

2011

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High-Temperature Sensitivity of a Depletion-Mode AlGaN/GaN MIS-HEMT

Efficient Temperature Sensor Based on SOI Gate-All-Around Electrostatically Formed Nanowire Transistor

Modeling a Floating-Gate Memristive Device for Computer Aided Design of Neuromorphic Computing

A monolithic 180 nm CMOS dosimeter for wireless In Vivo Dosimetry

Non-volatile memory transistor based on Pt nanocrystals with negative differencial resistance

A monolithic 180 nm CMOS dosimeter for In Vivo Dosimetry medical application

The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2―HfO2 stacks and Au nanocrystals

Bipolar charge transport and contact phenomena in Al2O3

A 0.18μm CMOS low-power radiation sensor for UWB wireless transmission

Radiation effects in nitride read-only memories

Peculiarities of hole trapping in Al2O3-SiO2 gate dielectric stack

Peculiarities of hole trapping in Al 2 O 3 -SiO 2 gate dielectric stack

The nature of HT V/sub t/ shift in NROM memory transistors

Monolithic 180 nm CMOS Dosimeter for In Vivo Medical Applications

Modeling a floating-gate memristive device for computer aided design of neuromorphic computing

Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

Behaviour of injected electrons in high- k dielectric layers

The effect of deposition process parameters and post-deposition treatments on the poly- and amorphous-silicon morphology

Ionizing Radiation Effects on Non Volatile Read Only Memory Cells

Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

Silicon nano-asperities: Morphological evolution and electrical properties of double-polysilicon interlayers

Optical properties of nonvolatile memory capacitors based on gold nanoparticles and SiO2–HfO2 sublayers

Profiling of deep traps in silicon oxide–nitride–oxide structures

Nonvolatile low-voltage memory transistor based on SiO 2 tunnelingand HfO 2 blocking layers with charge storage in Au nanocrystals

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