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InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

IEEE electron device letters, 2014-10, Vol.35 (10), p.1010-1012

2014

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100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

TheScientificWorld, 2014-01, Vol.2014, p.136340-6

2014

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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Journal of applied physics, 2022-07, Vol.132 (4)

2022

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High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

Journal of electronic materials, 2023-08, Vol.52 (8), p.5249-5255

2023

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Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors

Applied physics letters, 2006-09, Vol.89 (13), p.131926-1-3

2006

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GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

Micro and nanostructures (2022), 2022-04, Vol.164, p.107116, Article 107116

2022

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Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices

Solid-state electronics, 2023-12, Vol.210, p.108787, Article 108787

2023

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Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions

Applied physics letters, 2013-06, Vol.102 (24), p.243503-1-4

2013

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Room-temperature terahertz emission from nanometer field-effect transistors

Applied physics letters, 2006-04, Vol.88 (14), p.141906-1-3

2006

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Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

Applied physics letters, 2011-11, Vol.99 (20), p.203505-1-3

2011

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Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors

Applied physics letters, 2006-11, Vol.89 (22), p.222109-222109-3

2006

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Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2815-2822

2007

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0.2- \mu InP/GaAsSb DHBT Power Performance With 10 /\mu^ and 25% PAE at 94 GHz

IEEE electron device letters, 2014-03, Vol.35 (3), p.321-323

2014

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0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz

IEEE electron device letters, 2014-03, Vol.35 (3), p.321

2014

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0.2-μm InP/GaAsSb DHBT Power Performance With 10 mW/μm2 and 25% PAE at 94 GHz

IEEE electron device letters, 2014, Vol.35 (3), p.321-323

2014

Volltextzugriff (PDF)

Oblique modes effect on terahertz plasma wave resonant detection in InGaAs∕InAlAs multichannel transistors

Applied physics letters, 2008-06, Vol.92 (24), p.242105-1-3

2008

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Current driven resonant plasma wave detection of terahertz radiation: Toward the Dyakonov-Shur instability

Applied physics letters, 2008-05, Vol.92 (21), p.212101-212101-3

2008

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Terahertz emission induced by optical beating in nanometer-length field-effect transistors

Journal of applied physics, 2012-05, Vol.111 (10), p.103707-103707-9

2012

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Sb-HEMT: Toward 100-mV Cryogenic Electronics

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.1903-1909

2010

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Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature

Semiconductor science and technology, 2010-12, Vol.25 (12), p.125013-1-14

2010

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Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

Nanotechnology, 2003-02, Vol.14 (2), p.117-122

2003

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Microscopic modeling of nonlinear transport in ballistic nanodevices

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1897-1905

2003

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Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

Semiconductor science and technology, 2007-06, Vol.22 (6), p.663-670

2007

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Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

Journal of applied physics, 2009-05, Vol.105 (9), p.094504-094504-7

2009

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Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

Nanotechnology, 2011-11, Vol.22 (44), p.445203-1-5

2011

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InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors

GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices

Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions

Room-temperature terahertz emission from nanometer field-effect transistors

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors

Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

0.2- \mu InP/GaAsSb DHBT Power Performance With 10 /\mu^ and 25% PAE at 94 GHz

0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz

0.2-μm InP/GaAsSb DHBT Power Performance With 10 mW/μm2 and 25% PAE at 94 GHz

Oblique modes effect on terahertz plasma wave resonant detection in InGaAs∕InAlAs multichannel transistors

Current driven resonant plasma wave detection of terahertz radiation: Toward the Dyakonov-Shur instability

Terahertz emission induced by optical beating in nanometer-length field-effect transistors

Sb-HEMT: Toward 100-mV Cryogenic Electronics

Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature

Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

Microscopic modeling of nonlinear transport in ballistic nanodevices

Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

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