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Evolution of opto-electronic properties during film formation of complex semiconductors

Scientific reports, 2017-04, Vol.7 (1), p.45463-45463, Article 45463

2017

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Effect of Na presence during CuInSe2 growth on stacking fault annihilation and electronic properties

Applied physics letters, 2015-10, Vol.107 (15)

2015

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Incorporation of alkali metals in chalcogenide solar cells

Solar energy materials and solar cells, 2015-12, Vol.143, p.9-20

2015

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12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.864-869

2011

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Recrystallization of Cu(In,Ga)Se2 thin films studied by X-ray diffraction

Acta materialia, 2013-07, Vol.61 (12), p.4347-4353

2013

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Development of CuInS2-based solar cells and modules

Solar energy materials and solar cells, 2011-06, Vol.95 (6), p.1441-1445

2011

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Real-time study of Ga diffusion processes during the formation of Cu(In,Ga)Se2: The role of Cu and Na content

Solar energy materials and solar cells, 2013-09, Vol.116, p.102-109

2013

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Growth paths for the sulfurization of Cu-rich Cu/In thin films

Thin solid films, 2009-02, Vol.517 (7), p.2140-2144

2009

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In-situ studies of the recrystallization process of CuInS2 thin films by energy dispersive X-ray diffraction

Thin solid films, 2011-08, Vol.519 (21), p.7193-7196

2011

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Pressure-dependent real-time investigations on the rapid thermal sulfurization of Cu–In thin films

Journal of crystal growth, 2008-07, Vol.310 (15), p.3638-3644

2008

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Real-time observation of the phase transformations and microstructural changes during the incorporation of In into a thin Cu film at 770 K

Journal of alloys and compounds, 2014-03, Vol.588, p.644-647

2014

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12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879mV prepared by a rapid thermal process

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.864-869

2011

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Influence of precursor stacking on the absorber growth in Cu(In,Ga)S2 based solar cells prepared by a rapid thermal process

Thin solid films, 2011-08, Vol.519 (21), p.7189-7192

2011

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12.6% efficient CdS/Cu(In,Ga)S 2-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.864-869

2011

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Recrystallization of Cu(In,Ga)Se-2 thin films studied by X-ray diffraction

Acta materialia, 2013-07, Vol.61 (12)

2013

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A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se2

Journal of applied physics, 2014-05, Vol.115 (20)

2014

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A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se{sub 2}

Journal of applied physics, 2014-05, Vol.115 (20)

2014

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Effect of Na presence during CuInSe{sub 2} growth on stacking fault annihilation and electronic properties

Applied physics letters, 2015-10, Vol.107 (15)

2015

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Corrigendum to “Recrystallization of Cu(In,Ga)Se2 thin films studied by X-ray diffraction” [Acta Mater. 61 (2013) 4347–4353]

Acta materialia, 2014-10, Vol.79, p.436-436

2014

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Synthesis of TiO2/ZnO/Au for application in a new type of paper-based photo-microfluidic fuel cell using human blood

Journal of solid state electrochemistry, 2023-10, Vol.27 (10), p.2821-2835

2023

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Real-time observation of the phase transformations and microstructural changes during the incorporation of In into a thin Cu film at 770K

Journal of alloys and compounds, 2014-03, Vol.588, p.644-647

2014

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Real-time study of Ga diffusion processes during the formation of Cu (In,Ga)Se sub(2): The role of Cu and Na content

Solar energy materials and solar cells, 2013-09, Vol.116, p.102-109

2013

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Influence of precursor stacking on the absorber growth in Cu(In,Ga)S 2 based solar cells prepared by a rapid thermal process

Thin solid films, 2011-08, Vol.519 (21), p.7189-7192

2011

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Development of CuInS sub(2)-based solar cells and modules

Solar energy materials and solar cells, 2011-06, Vol.95 (6), p.1441-1445

2011

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12.6% efficient CdS/Cu(In,Ga)S sub(2)-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

Solar energy materials and solar cells, 2011-03, Vol.95 (3), p.864-869

2011

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Evolution of opto-electronic properties during film formation of complex semiconductors

Effect of Na presence during CuInSe2 growth on stacking fault annihilation and electronic properties

Incorporation of alkali metals in chalcogenide solar cells

12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

Recrystallization of Cu(In,Ga)Se2 thin films studied by X-ray diffraction

Development of CuInS2-based solar cells and modules

Real-time study of Ga diffusion processes during the formation of Cu(In,Ga)Se2: The role of Cu and Na content

Growth paths for the sulfurization of Cu-rich Cu/In thin films

In-situ studies of the recrystallization process of CuInS2 thin films by energy dispersive X-ray diffraction

Pressure-dependent real-time investigations on the rapid thermal sulfurization of Cu–In thin films

Real-time observation of the phase transformations and microstructural changes during the incorporation of In into a thin Cu film at 770 K

12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879mV prepared by a rapid thermal process

Influence of precursor stacking on the absorber growth in Cu(In,Ga)S2 based solar cells prepared by a rapid thermal process

12.6% efficient CdS/Cu(In,Ga)S 2-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

Recrystallization of Cu(In,Ga)Se-2 thin films studied by X-ray diffraction

A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se2

A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se{sub 2}

Effect of Na presence during CuInSe{sub 2} growth on stacking fault annihilation and electronic properties

Corrigendum to “Recrystallization of Cu(In,Ga)Se2 thin films studied by X-ray diffraction” [Acta Mater. 61 (2013) 4347–4353]

Synthesis of TiO2/ZnO/Au for application in a new type of paper-based photo-microfluidic fuel cell using human blood

Real-time observation of the phase transformations and microstructural changes during the incorporation of In into a thin Cu film at 770K

Real-time study of Ga diffusion processes during the formation of Cu (In,Ga)Se sub(2): The role of Cu and Na content

Influence of precursor stacking on the absorber growth in Cu(In,Ga)S 2 based solar cells prepared by a rapid thermal process

Development of CuInS sub(2)-based solar cells and modules

12.6% efficient CdS/Cu(In,Ga)S sub(2)-based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process

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