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A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation

Journal of applied physics, 2007-06, Vol.101 (12), p.124502

2007

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High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

IEEE electron device letters, 2005-02, Vol.26 (2), p.96-98

2005

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Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

Microelectronics and reliability, 2009-05, Vol.49 (5), p.474-477

2009

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Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Semiconductor science and technology, 2007-04, Vol.22 (4), p.307-311

2007

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High Channel Mobility 4H-SiC MOSFETs

Materials science forum, 2006-10, Vol.527-529, p.961-966

2006

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Selecting an appropriate ESD protection for discrete RF power LDMOSTs

Microelectronics and reliability, 2007-07, Vol.47 (7), p.1000-1007

2007

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Design and Fabrication of 4H-SiC RF MOSFETs

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3138-3145

2007

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High-power-density 4H-SiC RF MOSFETs

IEEE electron device letters, 2006-06, Vol.27 (6), p.469-471

2006

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Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2413-2417

2006

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Reliability status of GaN transistors and MMICs in Europe

2010 IEEE International Reliability Physics Symposium, 2010, p.129-133

2010

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Physics-Based Modeling of GaN HEMTs

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.685-693

2012

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High Frequency 4H-SiC MOSFETs

Materials Science Forum, 2007, Vol.556-557, p.795-798

2007

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Predictive Simulation of AlGaN/GaN HEMTs

2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007, p.1-4

2007

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Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Physica status solidi. A, Applications and materials science, 2007-12, Vol.204 (12), p.4230-4240

2007

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Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-09, Vol.118 (1), p.748-752

1996

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High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years

2008 Device Research Conference, 2008, p.133-134

2008

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High field effect mobility in Si face 4H-SiC MOSFET transistors

Electronics letters, 2004-04, Vol.40 (8), p.508

2004

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Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

Physica status solidi. C, 2006-06, Vol.3 (6), p.2231-2236

2006

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Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Electronics letters, 2005-07, Vol.41 (14), p.825-826

2005

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GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability

Physica status solidi. A, Applications and materials science, 2009-06, Vol.206 (6), p.1215-1220

2009

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Long and Short Range Order in Ion Irradiated Ceramics Studied by IBA, EXAFS and Raman

Materials science forum, 1997-01, Vol.248-249, p.319-326

1997

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Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency

Physica status solidi. C, 2010-10, Vol.7 (10), p.2398-2403

2010

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A surface-potential based model for GaN HEMTs in RF power amplifier applications

2010 International Electron Devices Meeting, 2010, p.8.3.1-8.3.4

2010

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Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps

Materials science forum, 2007-01, Vol.556-557, p.487-492

2007

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Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Electronics letters, 2005-07, Vol.41 (14), p.1-1

2005

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A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

High Channel Mobility 4H-SiC MOSFETs

Selecting an appropriate ESD protection for discrete RF power LDMOSTs

Design and Fabrication of 4H-SiC RF MOSFETs

High-power-density 4H-SiC RF MOSFETs

Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

Reliability status of GaN transistors and MMICs in Europe

Physics-Based Modeling of GaN HEMTs

High Frequency 4H-SiC MOSFETs

Predictive Simulation of AlGaN/GaN HEMTs

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling

High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years

High field effect mobility in Si face 4H-SiC MOSFET transistors

Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability

Long and Short Range Order in Ion Irradiated Ceramics Studied by IBA, EXAFS and Raman

Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency

A surface-potential based model for GaN HEMTs in RF power amplifier applications

Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

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