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Double Avalanche Injection in Diode Avalanche Sharpeners

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.345-349

2020

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Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes

Technical physics letters, 2023-12, Vol.49 (Suppl 1), p.S22-S25

2023

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The Effect of Maintaining a High Conductivity State in High-Voltage GaAs Diodes Switched-on in the Delayed Avalanche Breakdown Mode

Technical physics letters, 2023-12, Vol.49 (Suppl 2), p.S116-S120

2023

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Self-Sustaining of the Conducting State and Bipolar Ionizing Gunn Domains in Pulse Avalanche Gallium Arsenide Diodes

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.765-770

2023

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Wave Effects in a Coaxial Transmission Line under Subnanosecond Switching of a High-Voltage Diode in the Delayed Impact-Ionization Breakdown Mode

Technical physics letters, 2021-09, Vol.47 (9), p.661-664

2021

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Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures

Semiconductors (Woodbury, N.Y.), 2019-03, Vol.53 (3), p.379-384

2019

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Quasi-streamer mode of delayed avalanche breakdown initiated by technological imperfections

Journal of physics. Conference series, 2017-03, Vol.816 (1), p.12033

2017

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Subnanosecond impact-ionization switching of silicon structures without p–n junctions

Technical physics letters, 2017-06, Vol.43 (6), p.527-530

2017

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Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions

Technical physics letters, 2018-02, Vol.44 (2), p.160-163

2018

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Subnanosecond Avalanche Switching Simulations of n.sup.+-n-n.sup.+ Silicon Structures

Semiconductors (Woodbury, N.Y.), 2019-03, Vol.53 (3), p.379

2019

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Novel Closing Switches Based on Propagation of Fast Ionization Fronts in Semiconductors

IEEE transactions on plasma science, 2008-04, Vol.36 (2), p.378-382

2008

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Transverse instability and inhomogeneous dynamics of superfast impact ionization waves in diode structures

Solid-state electronics, 1997, Vol.41 (6), p.813-824

1997

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Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching

Technical physics letters, 2015-04, Vol.41 (4), p.307-309

2015

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Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes

Technical physics letters, 2012-06, Vol.38 (6), p.535-539

2012

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Parameters of silicon carbide diode avalanche shapers for the picosecond range

Technical physics letters, 2016, Vol.42 (1), p.43-46

2016

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Effect of distributed-gate control on current filamentation in thyristors

Solid-state electronics, 1992-09, Vol.35 (9), p.1359-1364

1992

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Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers

Technical physics letters, 2011-09, Vol.37 (9), p.849-853

2011

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Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p-n junctions

Technical physics letters, 2014-04, Vol.40 (4), p.357-360

2014

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Self-sustaining conducting state and bipolar ionizing Gunn domains in pulse avalanche GaAs diodes

Известия Российской академии наук. Серия физическая, 2023-06, Vol.87 (6), p.873-878

2023

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On periodic concentration distributions of a semiconductor plasma

Solid-state electronics, 1990-03, Vol.33 (3), p.387-388

1990

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Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes

Technical Physics Letters, 2022, Vol.48 (10), p.67

2022

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Addressing a model of multistreamer switching in high-voltage silicon p-n junctions above the Zener breakdown threshold

Technical physics letters, 2007-02, Vol.33 (2), p.180-183

2007

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Transverse stability of an impact-ionization front in a Si p +-n-n + structure

Semiconductors (Woodbury, N.Y.), 1997-04, Vol.31 (4), p.366-370

1997

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Current filamentation in bistable semiconductor systems with two global constraints

Zeitschrift für Physik. B, Condensed matter, 1997, Vol.104 (1), p.45-54

1997

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The turing instability and spatially periodic current stratification in a thyristor structure

Journal of communications technology & electronics, 1995, Vol.40 (2), p.49-57

1995

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Double Avalanche Injection in Diode Avalanche Sharpeners

Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes

The Effect of Maintaining a High Conductivity State in High-Voltage GaAs Diodes Switched-on in the Delayed Avalanche Breakdown Mode

Self-Sustaining of the Conducting State and Bipolar Ionizing Gunn Domains in Pulse Avalanche Gallium Arsenide Diodes

Wave Effects in a Coaxial Transmission Line under Subnanosecond Switching of a High-Voltage Diode in the Delayed Impact-Ionization Breakdown Mode

Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures

Quasi-streamer mode of delayed avalanche breakdown initiated by technological imperfections

Subnanosecond impact-ionization switching of silicon structures without p–n junctions

Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions

Subnanosecond Avalanche Switching Simulations of n.sup.+-n-n.sup.+ Silicon Structures

Novel Closing Switches Based on Propagation of Fast Ionization Fronts in Semiconductors

Transverse instability and inhomogeneous dynamics of superfast impact ionization waves in diode structures

Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching

Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes

Parameters of silicon carbide diode avalanche shapers for the picosecond range

Effect of distributed-gate control on current filamentation in thyristors

Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers

Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p-n junctions

Self-sustaining conducting state and bipolar ionizing Gunn domains in pulse avalanche GaAs diodes

On periodic concentration distributions of a semiconductor plasma

Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes

Addressing a model of multistreamer switching in high-voltage silicon p-n junctions above the Zener breakdown threshold

Transverse stability of an impact-ionization front in a Si p +-n-n + structure

Current filamentation in bistable semiconductor systems with two global constraints

The turing instability and spatially periodic current stratification in a thyristor structure

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