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In situ surface and interface study of crystalline (3×1)-O on InAs

Applied physics letters, 2016-07, Vol.109 (4)

2016

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A crystalline oxide passivation on In0.53Ga0.47As (100)

Journal of applied physics, 2017-03, Vol.121 (12)

2017

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A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC Integration

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.438-448

2018

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Modeling Transient Negative Capacitance in Steep-Slope FeFETs

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5157-5164

2018

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Lower limits of line resistance in nanocrystalline back end of line Cu interconnects

Applied physics letters, 2016-11, Vol.109 (19)

2016

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A Variation Robust Inference Engine Based on STT-MRAM with Parallel Read-Out

2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, p.1-5

2020

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Band-to-Band Tunneling in Ge-Rich SiGe Devices

IEEE electron device letters, 2014-04, Vol.35 (4), p.473-475

2014

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Modulation of the Schottky Barrier Height for CMOS advanced contacts

Microelectronic engineering, 2016-04, Vol.156, p.82-85

2016

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Is electron transport in nanocrystalline Cu interconnects surface dominated or grain boundary dominated?

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, p.114-116

2016

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Modulation of the Schottky barrier height for advanced contact schemes

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, p.39-42

2015

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A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.28.1.1-28.1.4

2016

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Hot-carrier effects in Hydrogen-passivated p-channel polycrystalline-Si MOSFET's

IEEE transactions on electron devices, 1987-05, Vol.34 (5), p.1079-1083

1987

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On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

MRS proceedings, 1987, Vol.106, Article 77

1987

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High freshwater turtle occupancy of streams within a sustainably managed tropical forest in Borneo

The Journal of wildlife management, 2024-09, Vol.88 (7), p.n/a

2024

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Social studies of scholarly life with sensor-based ethnographic observations

Scientometrics, 2019-06, Vol.119 (3), p.1387-1428

2019

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A transistor performance figure-of-merit including the effect of gate resistance and its application to scaling to sub-0.25-μm CMOS logic technologies

IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1246-1252

1998

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On/off current ratio in P-channel poly-Si MOSFETs: dependence on hot-carrier stress conditions

IEEE electron device letters, 1990-08, Vol.11 (8), p.346-348

Rodder, M.

1990

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Raised source/drain MOSFET with dual sidewall spacers

IEEE electron device letters, 1991-03, Vol.12 (3), p.89-91

1991

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Integration of ALD high-k dipole layers into CMOS SOI nanowire FETs for bi-directional threshold voltage engineering

2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020, p.15-16

2020

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Increased resistance in p-type poly-Si resistors by thermal anneal reduction interface charge

IEEE electron device letters, 1991-04, Vol.12 (4), p.160-162

Rodder, M.

1991

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Modeling of nonhyperbolic sine I-V characteristics in poly-Si resistors

IEEE electron device letters, 1992-02, Vol.13 (2), p.74-76

Rodder, M.

1992

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Leakage-current-induced hot-carrier degradation of p-channel MOSFETs

IEEE electron device letters, 1988-11, Vol.9 (11), p.573-575

Rodder, M.

1988

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Effects of channel width and parasitic bipolar action on p-type poly-Si resistor characteristics

IEEE electron device letters, 1991-05, Vol.12 (5), p.241-243

Rodder, M.

1991

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Utilization of plasma hydrogenation in stacked SRAM's with poly-Si PMOSFET's and bulk-Si NMOSFET's

IEEE electron device letters, 1991-05, Vol.12 (5), p.233-235

1991

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Physical Characterization of Chemical Mechanical Planarized Surface for Trench Isolation

Journal of the Electrochemical Society, 1995, Vol.142 (9), p.3088-3092

1995

Volltextzugriff (PDF)

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In situ surface and interface study of crystalline (3×1)-O on InAs

A crystalline oxide passivation on In0.53Ga0.47As (100)

A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC Integration

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Lower limits of line resistance in nanocrystalline back end of line Cu interconnects

A Variation Robust Inference Engine Based on STT-MRAM with Parallel Read-Out

Band-to-Band Tunneling in Ge-Rich SiGe Devices

Modulation of the Schottky Barrier Height for CMOS advanced contacts

Is electron transport in nanocrystalline Cu interconnects surface dominated or grain boundary dominated?

Modulation of the Schottky barrier height for advanced contact schemes

A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond

Hot-carrier effects in Hydrogen-passivated p-channel polycrystalline-Si MOSFET's

On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

High freshwater turtle occupancy of streams within a sustainably managed tropical forest in Borneo

Social studies of scholarly life with sensor-based ethnographic observations

A transistor performance figure-of-merit including the effect of gate resistance and its application to scaling to sub-0.25-μm CMOS logic technologies

On/off current ratio in P-channel poly-Si MOSFETs: dependence on hot-carrier stress conditions

Raised source/drain MOSFET with dual sidewall spacers

Integration of ALD high-k dipole layers into CMOS SOI nanowire FETs for bi-directional threshold voltage engineering

Increased resistance in p-type poly-Si resistors by thermal anneal reduction interface charge

Modeling of nonhyperbolic sine I-V characteristics in poly-Si resistors

Leakage-current-induced hot-carrier degradation of p-channel MOSFETs

Effects of channel width and parasitic bipolar action on p-type poly-Si resistor characteristics

Utilization of plasma hydrogenation in stacked SRAM's with poly-Si PMOSFET's and bulk-Si NMOSFET's

Physical Characterization of Chemical Mechanical Planarized Surface for Trench Isolation

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