UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

Electronics letters, 2015-09, Vol.51 (19), p.1532-1534

2015

Volltextzugriff (PDF)

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Applied physics letters, 2023-01, Vol.122 (3)

2023

Volltextzugriff (PDF)

Collective acoustic modes in various two-dimensional crystals by ultrafast acoustics: Theory and experiment

Physical review. B, Condensed matter and materials physics, 2008-08, Vol.78 (6), Article 064302

2008

Volltextzugriff (PDF)

Near-self-imaging cavity for three-mode optoacoustic parametric amplifiers using silicon microresonators

Applied optics (2004), 2014-02, Vol.53 (5), p.841

2014

Volltextzugriff (PDF)

Individual and collective vibrational modes of nanostructures studied by picosecond ultrasonics

Ultrasonics, 2006-12, Vol.44, p.e1289-e1294

2006

Volltextzugriff (PDF)

Picosecond ultrasonic investigations of phonons in 2D nano-scaled lattices

Journal of physics. Conference series, 2007-12, Vol.92 (1), p.012027-1-4

2007

Volltextzugriff (PDF)

Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons

Small (Weinheim an der Bergstrasse, Germany), 2008-06, Vol.4 (6), p.716-720

2008

Volltextzugriff (PDF)

High quality factor mg-scale silicon mechanical resonators for 3-mode optoacoustic parametric amplifiers

Journal of applied physics, 2013-07, Vol.114 (1)

2013

Volltextzugriff (PDF)

Epitaxial GaAs for X-ray imaging

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2011-05, Vol.633 (1), p.S65-S68

2011

Volltextzugriff (PDF)

Time-resolved vibrations of two-dimensional hypersonic phononic crystals

Physical review. B, Condensed matter and materials physics, 2007-09, Vol.76 (9), Article 092301

2007

Volltextzugriff (PDF)

Observation of three-mode parametric instability

Physical review. A, Atomic, molecular, and optical physics, 2015-03, Vol.91 (3), Article 033832

2015

Volltextzugriff (PDF)

Collective acoustic modes in various two-dimensional crystals by ultrafast acoustics: theory and experiments

Physical review. B, Condensed matter and materials physics, 2008, Vol.78

2008

Volltextzugriff (PDF)

Development of a reference wafer for on-wafer testing of extreme impedance devices

2016 88th ARFTG Microwave Measurement Conference (ARFTG), 2016, p.1-4

2016

Volltextzugriff (PDF)

Electrolytic Micro‐Capacitors Based on Tantalum Films for High Voltage Applications

Advanced materials technologies, 2024-07

2024

Volltextzugriff (PDF)

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2016-04, Vol.213 (4), p.873-877

2016

Volltextzugriff (PDF)

Nanofeather ruthenium nitride electrodes for electrochemical capacitors

Nature materials, 2024-05, Vol.23 (5), p.670-679

2024

Volltextzugriff (PDF)

Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz

2014 44th European Microwave Conference, 2014, p.1528-1531

2014

Volltextzugriff (PDF)

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors: Above 2000 V breakdown voltage at 600 K

Physica status solidi. A, Applications and materials science, 2016-04, Vol.213 (4), p.873-877

2016

Volltextzugriff (PDF)

Above 2000V breakdown voltage at 600K GaN-on-silicon high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2016-04, Vol.213 (4), p.873-877

2016

Volltextzugriff (PDF)

Gallium nitride MEMS resonators: how residual stress impacts design and performances

Microsystem technologies : sensors, actuators, systems integration, 2018, Vol.24 (1), p.371-377

2018

Volltextzugriff (PDF)

1900 V, 1.6 mΩ cm 2 AlN/GaN-on-Si power devices realized by local substrate removal

Applied physics express, 2014-03, Vol.7 (3), p.34103

2014

Volltextzugriff (PDF)

Complete characterization in thin film using picosecond ultrasonics and nanostructured transducer

The Journal of the Acoustical Society of America, 2008-05, Vol.123 (5_Supplement), p.3705-3705

2008

Volltextzugriff (PDF)

Interlaboratory Investigation of On-wafer S-parameter Measurements from 110 GHz to 1.1 THz

2023 53rd European Microwave Conference (EuMC), 2023, p.624-627

2023

Volltextzugriff (PDF)

On-Wafer Broadband Microwave Measurement of High Impedance Devices-CPW Test Structures with Integrated Metallic Nano-Resistances

2018 48th European Microwave Conference (EuMC), 2018, p.25-28

2018

Volltextzugriff (PDF)

Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz

2014 9th European Microwave Integrated Circuit Conference, 2014, p.584-587

2014

Volltextzugriff (PDF)

1 – 25 von 26

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(18)
Mit Volltextzugriff
(19)

Publikationsform

Artikel
(20)
Tagungsberichte
(6)

Sprache

Englisch
(26)

Erscheinungsjahr

n.n

Thema

Science & Technology
(17)
Physics
(15)
Physical Sciences
(14)
Technology
(12)
Engineering Sciences
(11)
Physics, Applied
(10)
Materials Science
(8)
Materials Science, Multidisciplinary
(7)
Physics, Condensed Matter
(6)
Coplanar Waveguide
(4)
Coplanar Waveguides
(4)
Engineering
(4)
Engineering, Electrical & Electronic
(4)
Silicon
(4)
Substrates
(4)
Acoustics
(3)
Calibration
(3)
High Electron Mobility Transistors
(3)
Micro And Nanotechnologies
(3)
Microelectronics
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Collective acoustic modes in various two-dimensional crystals by ultrafast acoustics: Theory and experiment

Near-self-imaging cavity for three-mode optoacoustic parametric amplifiers using silicon microresonators

Individual and collective vibrational modes of nanostructures studied by picosecond ultrasonics

Picosecond ultrasonic investigations of phonons in 2D nano-scaled lattices

Side-Gated Transport in Focused-Ion-Beam-Fabricated Multilayered Graphene Nanoribbons

High quality factor mg-scale silicon mechanical resonators for 3-mode optoacoustic parametric amplifiers

Epitaxial GaAs for X-ray imaging

Time-resolved vibrations of two-dimensional hypersonic phononic crystals

Observation of three-mode parametric instability

Collective acoustic modes in various two-dimensional crystals by ultrafast acoustics: theory and experiments

Development of a reference wafer for on-wafer testing of extreme impedance devices

Electrolytic Micro‐Capacitors Based on Tantalum Films for High Voltage Applications

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Nanofeather ruthenium nitride electrodes for electrochemical capacitors

Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors: Above 2000 V breakdown voltage at 600 K

Above 2000V breakdown voltage at 600K GaN-on-silicon high electron mobility transistors

Gallium nitride MEMS resonators: how residual stress impacts design and performances

1900 V, 1.6 mΩ cm 2 AlN/GaN-on-Si power devices realized by local substrate removal

Complete characterization in thin film using picosecond ultrasonics and nanostructured transducer

Interlaboratory Investigation of On-wafer S-parameter Measurements from 110 GHz to 1.1 THz

On-Wafer Broadband Microwave Measurement of High Impedance Devices-CPW Test Structures with Integrated Metallic Nano-Resistances

Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz

Suchergebnisse filtern