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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Energies (Basel), 2019-06, Vol.12 (12), p.2310

2019

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Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs

Applied physics letters, 2020-09, Vol.117 (10)

2020

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Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Applied physics letters, 2013-11, Vol.103 (20)

2013

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Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal of applied physics, 2017-01, Vol.121 (4)

2017

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Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Applied physics letters, 2016-07, Vol.109 (1)

2016

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Selective Doping in Silicon Carbide Power Devices

Materials, 2021-07, Vol.14 (14), p.3923

2021

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Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Applied physics letters, 2014-10, Vol.105 (14)

2014

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Materials and Processes for Schottky Contacts on Silicon Carbide

Materials, 2021-12, Vol.15 (1), p.298

2021

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Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2735-2741

2016

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Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Applied physics letters, 2024-06, Vol.124 (24)

2024

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Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Applied physics letters, 2022-12, Vol.121 (23)

2022

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Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Applied physics letters, 2024-03, Vol.124 (10)

2024

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Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization

ACS applied materials & interfaces, 2017-07, Vol.9 (27), p.23164-23174

2017

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Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Materials, 2022-01, Vol.15 (3), p.830

2022

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Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Applied physics letters, 2020-07, Vol.117 (1)

2020

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Vertical Transistors Based on 2D Materials: Status and Prospects

Crystals (Basel), 2018-02, Vol.8 (2), p.70

2018

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4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Materials, 2024-04, Vol.17 (8), p.1908

2024

Volltextzugriff (PDF)

Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Nanomaterials (Basel, Switzerland), 2020-04, Vol.10 (4), p.803

2020

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Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP advances, 2016-07, Vol.6 (7)

2016

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Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

Volltextzugriff (PDF)

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2012-10, Vol.112 (8)

2012

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Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Applied sciences, 2021-11, Vol.11 (22), p.11052

2021

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Ohmic contacts to Gallium Nitride materials

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Selective Doping in Silicon Carbide Power Devices

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Materials and Processes for Schottky Contacts on Silicon Carbide

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs

Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Vertical Transistors Based on 2D Materials: Status and Prospects

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

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