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Cyclic bending experiments on free-standing Cu micron lines observed by electron backscatter diffraction

Acta materialia, 2015-01, Vol.83, p.460-469

2015

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Temperature dependent transition of intragranular plastic to intergranular brittle failure in electrodeposited Cu micro-tensile samples

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2014-11, Vol.618, p.398-405

2014

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Damage evolution during cyclic tension–tension loading of micron-sized Cu lines

Acta materialia, 2014-04, Vol.67, p.297-307

2014

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Micro-tension study of miniaturized Cu lines at variable temperatures

Acta materialia, 2015-06, Vol.92, p.243-254

2015

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Influence of initial microstructure on thermomechanical fatigue behavior of Cu films on substrates

Microelectronic engineering, 2015-04, Vol.137, p.5-10

2015

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High cycle fatigue properties of Cu films

Microelectronic engineering, 2015-04, Vol.137, p.64-69

2015

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Novel temperature dependent tensile test of freestanding copper thin film structures

Review of scientific instruments, 2012-06, Vol.83 (6), p.064702-064702-9

2012

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Effective and reliable heat management for power devices exposed to cyclic short overload pulses

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1745-1749

2013

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A reliable technology concept for active power cycling to extreme temperatures

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1927-1932

2011

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Last Metal Copper Metallization for Power Devices

IEEE transactions on semiconductor manufacturing, 2008-08, Vol.21 (3), p.358-362

2008

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High cycle fatigue testing of thermosonic ball bonds

Microelectronics and reliability, 2017-04, Vol.71, p.91-98

2017

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1.5-V single work-function W/WN/n/sup +/-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

IEEE electron device letters, 2002-10, Vol.23 (10), p.621-623

2002

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Magnetic anisotropy and film structure in ultrathin Fe films on Au(111)

Journal of magnetism and magnetic materials, 1993-03, Vol.121 (1), p.498-502

1993

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Copper Metallization for Power Devices

2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 2007, p.259-262

2007

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1.5-V single work-function W/WN/n+-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

IEEE electron device letters, 2002-10, Vol.23 (10), p.621-623

2002

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1.5-V single work-function W/WN/n super(+)-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

IEEE electron device letters, 2002-01, Vol.23 (10)

2002

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Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing

IEEE transactions on device and materials reliability, 2010-03, Vol.10 (1), p.47-54

2010

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1.5-V single work-function W/WN/n(+)-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

IEEE electron device letters, 2002-10, Vol.23 (10), p.621-623

2002

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W/WN/poly gate implementation for sub-130 nm vertical cell DRAM

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001, p.31-32

2001

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The Role of the TiN Liner in Forcefill

Electrochemical and solid-state letters, 1998-08, Vol.1 (2), p.97

Janssen, G. C. A. M.

1998

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Magnetic Anisotropy and Film Structure in Ultrathin Iron Films on Au(111)

Journal of magnetism and magnetic materials, 1992-09, Vol.121 (1-3), p.498-502

1992

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Lithography technique to reduce the alignment errors from die placement in fan-out wafer level packaging applications

2011 IEEE 61st Electronic Components and Technology Conference (ECTC), 2011, p.65-70

2011

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High performance single work-function tungsten gate CMOS devices for gigabit DRAM

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.3.3.1-3.3.4

2001

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Magnetic Anisotropy In Ultrathin Metallic Films And Multilayers: Origin. Phenomena And Structure

[1993] Digests of International Magnetics Conference, 1993, p.GA-GA

1993

Volltextzugriff (PDF)

Integration aspects of Flowfill and spin-on-glass process for sub-0.35 /spl mu/m interconnects

Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102), 1998, p.271-273

1998

Volltextzugriff (PDF)

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Cyclic bending experiments on free-standing Cu micron lines observed by electron backscatter diffraction

Temperature dependent transition of intragranular plastic to intergranular brittle failure in electrodeposited Cu micro-tensile samples

Damage evolution during cyclic tension–tension loading of micron-sized Cu lines

Micro-tension study of miniaturized Cu lines at variable temperatures

Influence of initial microstructure on thermomechanical fatigue behavior of Cu films on substrates

High cycle fatigue properties of Cu films

Novel temperature dependent tensile test of freestanding copper thin film structures

Effective and reliable heat management for power devices exposed to cyclic short overload pulses

A reliable technology concept for active power cycling to extreme temperatures

Last Metal Copper Metallization for Power Devices

High cycle fatigue testing of thermosonic ball bonds

1.5-V single work-function W/WN/n/sup +/-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

Magnetic anisotropy and film structure in ultrathin Fe films on Au(111)

Copper Metallization for Power Devices

1.5-V single work-function W/WN/n+-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

1.5-V single work-function W/WN/n super(+)-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing

1.5-V single work-function W/WN/n(+)-poly gate CMOS device design with 110-nm buried-channel PMOS for 90-nm vertical-cell DRAM

W/WN/poly gate implementation for sub-130 nm vertical cell DRAM

The Role of the TiN Liner in Forcefill

Magnetic Anisotropy and Film Structure in Ultrathin Iron Films on Au(111)

Lithography technique to reduce the alignment errors from die placement in fan-out wafer level packaging applications

High performance single work-function tungsten gate CMOS devices for gigabit DRAM

Magnetic Anisotropy In Ultrathin Metallic Films And Multilayers: Origin. Phenomena And Structure

Integration aspects of Flowfill and spin-on-glass process for sub-0.35 /spl mu/m interconnects

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