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Strain-induced modifications of the band structure of In/sub x/Ga/sub 1-x/P-In/sub 0.5/Al/sub 0.5/P multiple quantum wells

IEEE journal of quantum electronics, 1998-01, Vol.34 (1), p.93-100

1998

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Integrated optical inverter using light amplifying optical switch (LAOS)

Electronics letters, 1991-01, Vol.27 (6), p.497-499

1991

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A comparison of Pd Schottky contacts on InP, GaAs and Si

Solid-state electronics, 1981-01, Vol.24 (2), p.99-103

1981

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Characterization of deep levels in modulation-doped AlGaAs/GaAs FET's

IEEE electron device letters, 1983-10, Vol.4 (10), p.360-362

1983

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Extraction of the minimum specific contact resistivity using Kelvin resistors

IEEE electron device letters, 1986-12, Vol.7 (12), p.674-676

1986

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A new technique for characterization of the "End" resistance in modulation-doped FET's

IEEE transactions on electron devices, 1984-10, Vol.31 (10), p.1394-1398

1984

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Carrier lifetime and recombination in long-wavelength quantum-well lasers

IEEE journal of selected topics in quantum electronics, 1999-05, Vol.5 (3), p.613-619

1999

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Gas-source molecular beam epitaxial growth of low threshold current 1.3 μm [formula omitted] lasers

Journal of crystal growth, 1997-05, Vol.175, p.945-947

1997

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A study of Pd2Si films on silicon using Auger electron spectroscopy

Solid-state electronics, 1976-05, Vol.19 (5), p.407-413

1976

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The effects of CdCl/sub 2/ on CdTe electrical properties using a new theory for grain-boundary conduction

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.603-606

2000

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Low threshold current 1.3 [micro sign]m InAsP/InGaAsP lasers grown by gas-source molecular beam epitaxy

Electronics letters, 1996, Vol.32 (12), p.1103, Article 1103

1996

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Optical modulators at 604 nm using strain-balanced InGaP/InGaP MQWs

Electronics letters, 1998-04, Vol.34 (7), p.696

1998

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108-GHz GaInAs/InP p-i-n photodiodes with integrated bias tees and matched resistors

IEEE photonics technology letters, 1993-11, Vol.5 (11), p.1310-1312

1993

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Radiation damage in ReSi sub 2 by a MeV sup 4 He beam

Applied physics letters, 1990-10, Vol.57:16

1990

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Electrical and optical feedback in an InGaAs/InP light-amplifying optical switch (LAOS)

IEEE transactions on electron devices, 1991-11, Vol.38 (11), p.2452-2459

1991

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Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs

Solid-state electronics, 1975-01, Vol.18 (4), p.331-338

Robinson, G.Y.

1975

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Strained layer In/sub x/Ga/sub 1-x/As/GaAs and In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/P multiple-quantum-well optical modulators grown by gas-source MBE

IEEE photonics technology letters, 1993-09, Vol.5 (9), p.987-989

1993

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GSMBE growth of GaAs at low AsH 3 cracking temperatures

Journal of crystal growth, 1991, Vol.111 (1), p.507-510

1991

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Schottky contacts on chemically etched p - and n -type indium phosphide

Applied physics letters, 1982-03, Vol.40 (5), p.426-428

1982

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Improved InGaP/GaAs hetetointerfaces during gas-source MBE growth

Journal of crystal growth, 1991-05, Vol.111 (1), p.525-528

1991

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The effect of growth pause on the composition of InGaP/GaAs Heterointerfaces

Journal of crystal growth, 1990-10, Vol.105 (1), p.244-248

1990

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Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/lnAIP multiple quantum wells and InGaP bulk

Journal of electronic materials, 1994-03, Vol.23 (3), p.359-362

1994

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A study of Pd 2Si films on silicon using Auger electron spectroscopy

Solid-state electronics, 1976, Vol.19 (5), p.407-413

1976

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Specific contact resistivity of InGaAs/InP p-isotype heterojunctions

Electronics letters, 1992-08, Vol.28 (17), p.1568-1570

1992

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Integrated optical NOR gate

IEEE photonics technology letters, 1992-04, Vol.4 (4), p.390-392

1992

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Strain-induced modifications of the band structure of In/sub x/Ga/sub 1-x/P-In/sub 0.5/Al/sub 0.5/P multiple quantum wells

Integrated optical inverter using light amplifying optical switch (LAOS)

A comparison of Pd Schottky contacts on InP, GaAs and Si

Characterization of deep levels in modulation-doped AlGaAs/GaAs FET's

Extraction of the minimum specific contact resistivity using Kelvin resistors

A new technique for characterization of the "End" resistance in modulation-doped FET's

Carrier lifetime and recombination in long-wavelength quantum-well lasers

Gas-source molecular beam epitaxial growth of low threshold current 1.3 μm [formula omitted] lasers

A study of Pd2Si films on silicon using Auger electron spectroscopy

The effects of CdCl/sub 2/ on CdTe electrical properties using a new theory for grain-boundary conduction

Low threshold current 1.3 [micro sign]m InAsP/InGaAsP lasers grown by gas-source molecular beam epitaxy

Optical modulators at 604 nm using strain-balanced InGaP/InGaP MQWs

108-GHz GaInAs/InP p-i-n photodiodes with integrated bias tees and matched resistors

Radiation damage in ReSi sub 2 by a MeV sup 4 He beam

Electrical and optical feedback in an InGaAs/InP light-amplifying optical switch (LAOS)

Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs

Strained layer In/sub x/Ga/sub 1-x/As/GaAs and In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/P multiple-quantum-well optical modulators grown by gas-source MBE

GSMBE growth of GaAs at low AsH 3 cracking temperatures

Schottky contacts on chemically etched p - and n -type indium phosphide

Improved InGaP/GaAs hetetointerfaces during gas-source MBE growth

The effect of growth pause on the composition of InGaP/GaAs Heterointerfaces

Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/lnAIP multiple quantum wells and InGaP bulk

A study of Pd 2Si films on silicon using Auger electron spectroscopy

Specific contact resistivity of InGaAs/InP p-isotype heterojunctions

Integrated optical NOR gate

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