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Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Journal of applied physics, 2008-06, Vol.103 (12), p.124309-124309-6

2008

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Patterns of Ensemble Variation of the Optical Properties of ZnO Nanowires Grown with Copper and Gold Catalysts

Journal of physical chemistry. C, 2009-02, Vol.113 (6), p.2277-2285

2009

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Isomorphic contact resonance force microscopy and piezoresponse force microscopy of an AlN thin film: demonstration of a new contact resonance technique

Nano futures, 2020-06, Vol.4 (2), p.25003

2020

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Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

Journal of applied physics, 2007-06, Vol.101 (11), p.113506-113506-8

2007

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Investigation of the structure of barium titanate thin films by Raman spectroscopy

Journal of applied physics, 1994-12, Vol.76 (11), p.7487-7498

1994

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Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects

Journal of applied physics, 2007-06, Vol.101 (11), p.113505-113505-8

2007

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High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa1−xAs films

Journal of applied physics, 2003-04, Vol.93 (7), p.3747-3759

2003

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Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si-doped GaN epitaxial films

Physica status solidi. C, 2005-05, Vol.2 (7), p.2433-2436

2005

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Defect mapping of a synthetic diamond single crystal by cathodoluminescence spectroscopy

Journal of materials research, 1994-05, Vol.9 (5), p.1298-1307

1994

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Cathodoluminescence spectroscopy of free and bound excitons in chemical-vapor-deposited diamond

Physical review. B, Condensed matter, 1993-11, Vol.48 (19), p.14167-14181

1993

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Photoluminescence excitation by band-gap optical absorption in chemical vapor deposition diamond films

Journal of applied physics, 1991-03, Vol.69 (6), p.3702-3708

1991

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Composition and carrier-concentration dependence of the electronic structure of In y Ga 1 − y As 1 − x N x films with nitrogen mole fraction of lessthan 0.012

Journal of applied physics, 2005-11, Vol.98 (9), p.093714-093714-14

2005

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Composition and carrier-concentration dependence of the electronic structure of InyGa1−yAs1−xNx films with nitrogen mole fraction of less than 0.012

Journal of applied physics, 2005-11, Vol.98 (9)

2005

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Composition and carrier-concentration dependence of the electronic structure of In{sub y}Ga{sub 1-y}As{sub 1-x}N{sub x} films with nitrogen mole fraction of less than 0.012

Journal of applied physics, 2005-11, Vol.98 (9)

2005

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Extended x-ray absorption fine structure study of AlxGa(1−x)N films

Applied physics letters, 1997-04, Vol.70 (16), p.2108-2110

1997

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Nitrogen-activated bowing of dilute InyGa1−yAs1−xNx based on photoreflectance studies

Journal of applied physics, 2003-12, Vol.94 (12), p.7576-7580

2003

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Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates

MRS proceedings, 2004, Vol.831, Article E3.2

2004

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Low-Electron-Energy Cathodoluminescence Study Of Polishing And Etching Effects On The Optical Properties Of Bulk Single-Crystal Gallium Nitride

MRS proceedings, 2002, Vol.743, Article L3.38

2002

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Cathodoluminescence, Photoluminescence, and Optical Absorbance Spectroscopy of Aluminum Gallium Nitride (AlxGa1−xN) Films

Journal of materials research, 1998-09, Vol.13 (9), p.2480-2497

1998

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Structure of barium titanate thin films [investigated] by Raman spectroscopy

Journal of applied physics, 1994-01, Vol.76 (11), p.7487-7498

1994

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Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGaN Films Using Prism-Coupling Techniques Correlated with Spectroscopic Reflection/Transmission Analysisa

MRS proceedings, 2002, Vol.743

2002

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Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGaN Films Using Prism-Coupling Techniques Correlated with Spectroscopic Reflection/Transmission Analysis a

MRS proceedings, 2002, Vol.743, Article L11.21

2002

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Cathodoluminescence measurement of strained alumina single crystals

Journal of the European Ceramic Society, 1991, Vol.7 (2), p.109-116

1991

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Spatially and spectrally resolved cathodoluminescence of hot-filament chemical-vapor-deposited diamond particles

Journal of materials research, 1992-02, Vol.7 (2), p.394-403

1992

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Studies of defects in diamond films and particles by luminescence and Raman spectroscopies

Carbon (New York), 1990, Vol.28 (6), p.792-792

1990

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1 – 25 von 135

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Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Patterns of Ensemble Variation of the Optical Properties of ZnO Nanowires Grown with Copper and Gold Catalysts

Isomorphic contact resonance force microscopy and piezoresponse force microscopy of an AlN thin film: demonstration of a new contact resonance technique

Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

Investigation of the structure of barium titanate thin films by Raman spectroscopy

Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects

High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa1−xAs films

Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si-doped GaN epitaxial films

Defect mapping of a synthetic diamond single crystal by cathodoluminescence spectroscopy

Cathodoluminescence spectroscopy of free and bound excitons in chemical-vapor-deposited diamond

Photoluminescence excitation by band-gap optical absorption in chemical vapor deposition diamond films

Composition and carrier-concentration dependence of the electronic structure of In y Ga 1 − y As 1 − x N x films with nitrogen mole fraction of lessthan 0.012

Composition and carrier-concentration dependence of the electronic structure of InyGa1−yAs1−xNx films with nitrogen mole fraction of less than 0.012

Composition and carrier-concentration dependence of the electronic structure of In{sub y}Ga{sub 1-y}As{sub 1-x}N{sub x} films with nitrogen mole fraction of less than 0.012

Extended x-ray absorption fine structure study of AlxGa(1−x)N films

Nitrogen-activated bowing of dilute InyGa1−yAs1−xNx based on photoreflectance studies

Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates

Low-Electron-Energy Cathodoluminescence Study Of Polishing And Etching Effects On The Optical Properties Of Bulk Single-Crystal Gallium Nitride

Cathodoluminescence, Photoluminescence, and Optical Absorbance Spectroscopy of Aluminum Gallium Nitride (AlxGa1−xN) Films

Structure of barium titanate thin films [investigated] by Raman spectroscopy

Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGaN Films Using Prism-Coupling Techniques Correlated with Spectroscopic Reflection/Transmission Analysisa

Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGaN Films Using Prism-Coupling Techniques Correlated with Spectroscopic Reflection/Transmission Analysis a

Cathodoluminescence measurement of strained alumina single crystals

Spatially and spectrally resolved cathodoluminescence of hot-filament chemical-vapor-deposited diamond particles

Studies of defects in diamond films and particles by luminescence and Raman spectroscopies

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