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Patterns of Ensemble Variation of the Optical Properties of ZnO Nanowires Grown with Copper and Gold Catalysts

Journal of physical chemistry. C, 2009-02, Vol.113 (6), p.2277-2285

2009

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Isomorphic contact resonance force microscopy and piezoresponse force microscopy of an AlN thin film: demonstration of a new contact resonance technique

Nano futures, 2020-06, Vol.4 (2), p.25003

2020

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Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Journal of applied physics, 2008-06, Vol.103 (12), p.124309-124309-6

2008

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Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

Journal of applied physics, 2007-06, Vol.101 (11), p.113506-113506-8

2007

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Experimental reconstruction of the contact resonance shape factor for quantification and amplification of bias-induced strain in atomic force microscopy

Applied physics letters, 2019-04, Vol.114 (13)

2019

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Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects

Journal of applied physics, 2007-06, Vol.101 (11), p.113505-113505-8

2007

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Investigation of the structure of barium titanate thin films by Raman spectroscopy

Journal of applied physics, 1994-12, Vol.76 (11), p.7487-7498

1994

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Line shape analysis of the Raman spectrum of diamond films grown by hot-filament and microwave-plasma chemical vapor deposition

Journal of materials research, 1990-11, Vol.5 (11), p.2456-2468

1990

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High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa1−xAs films

Journal of applied physics, 2003-04, Vol.93 (7), p.3747-3759

2003

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Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si-doped GaN epitaxial films

Physica status solidi. C, 2005-05, Vol.2 (7), p.2433-2436

2005

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Trademark licensing

The Licensing journal, 2015-04, Vol.35 (4), p.27

Robins, Lawrence R

2015

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Defect mapping of a synthetic diamond single crystal by cathodoluminescence spectroscopy

Journal of materials research, 1994-05, Vol.9 (5), p.1298-1307

1994

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Composition and carrier-concentration dependence of the electronic structure of In y Ga 1 − y As 1 − x N x films with nitrogen mole fraction of lessthan 0.012

Journal of applied physics, 2005-11, Vol.98 (9), p.093714-093714-14

2005

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Photoluminescence excitation by band-gap optical absorption in chemical vapor deposition diamond films

Journal of applied physics, 1991-03, Vol.69 (6), p.3702-3708

1991

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Composition and carrier-concentration dependence of the electronic structure of InyGa1−yAs1−xNx films with nitrogen mole fraction of less than 0.012

Journal of applied physics, 2005-11, Vol.98 (9)

2005

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Composition and carrier-concentration dependence of the electronic structure of In{sub y}Ga{sub 1-y}As{sub 1-x}N{sub x} films with nitrogen mole fraction of less than 0.012

Journal of applied physics, 2005-11, Vol.98 (9)

2005

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Extended x-ray absorption fine structure study of AlxGa(1−x)N films

Applied physics letters, 1997-04, Vol.70 (16), p.2108-2110

1997

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Cathodoluminescence spectroscopy of free and bound excitons in chemical-vapor-deposited diamond

Physical review. B, Condensed matter, 1993-11, Vol.48 (19), p.14167-14181

1993

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Nitrogen-activated bowing of dilute InyGa1−yAs1−xNx based on photoreflectance studies

Journal of applied physics, 2003-12, Vol.94 (12), p.7576-7580

2003

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Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates

MRS proceedings, 2004, Vol.831, Article E3.2

2004

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Low-Electron-Energy Cathodoluminescence Study Of Polishing And Etching Effects On The Optical Properties Of Bulk Single-Crystal Gallium Nitride

MRS proceedings, 2002, Vol.743, Article L3.38

2002

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An evaluation of the REMEDY project with an emphasis on sustainability: A Safe Schools /Healthy Students federal grant

Robins, Lawrence F

2005

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Cathodoluminescence, Photoluminescence, and Optical Absorbance Spectroscopy of Aluminum Gallium Nitride (AlxGa1−xN) Films

Journal of materials research, 1998-09, Vol.13 (9), p.2480-2497

1998

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A picture worth a thousand lawsuits

Managing Intellectual Property, 2002-03 (117), p.10

Robins, Lawrence R

2002

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Structure of barium titanate thin films [investigated] by Raman spectroscopy

Journal of applied physics, 1994-01, Vol.76 (11), p.7487-7498

1994

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Patterns of Ensemble Variation of the Optical Properties of ZnO Nanowires Grown with Copper and Gold Catalysts

Isomorphic contact resonance force microscopy and piezoresponse force microscopy of an AlN thin film: demonstration of a new contact resonance technique

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

Experimental reconstruction of the contact resonance shape factor for quantification and amplification of bias-induced strain in atomic force microscopy

Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects

Investigation of the structure of barium titanate thin films by Raman spectroscopy

Line shape analysis of the Raman spectrum of diamond films grown by hot-filament and microwave-plasma chemical vapor deposition

High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa1−xAs films

Surface photovoltage spectroscopy of minority carrier diffusion lengths in undoped and Si-doped GaN epitaxial films

Trademark licensing

Defect mapping of a synthetic diamond single crystal by cathodoluminescence spectroscopy

Composition and carrier-concentration dependence of the electronic structure of In y Ga 1 − y As 1 − x N x films with nitrogen mole fraction of lessthan 0.012

Photoluminescence excitation by band-gap optical absorption in chemical vapor deposition diamond films

Composition and carrier-concentration dependence of the electronic structure of InyGa1−yAs1−xNx films with nitrogen mole fraction of less than 0.012

Composition and carrier-concentration dependence of the electronic structure of In{sub y}Ga{sub 1-y}As{sub 1-x}N{sub x} films with nitrogen mole fraction of less than 0.012

Extended x-ray absorption fine structure study of AlxGa(1−x)N films

Cathodoluminescence spectroscopy of free and bound excitons in chemical-vapor-deposited diamond

Nitrogen-activated bowing of dilute InyGa1−yAs1−xNx based on photoreflectance studies

Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates

Low-Electron-Energy Cathodoluminescence Study Of Polishing And Etching Effects On The Optical Properties Of Bulk Single-Crystal Gallium Nitride

An evaluation of the REMEDY project with an emphasis on sustainability: A Safe Schools /Healthy Students federal grant

Cathodoluminescence, Photoluminescence, and Optical Absorbance Spectroscopy of Aluminum Gallium Nitride (AlxGa1−xN) Films

A picture worth a thousand lawsuits

Structure of barium titanate thin films [investigated] by Raman spectroscopy

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