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Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 μm

IEEE photonics technology letters, 2000-02, Vol.12 (2), p.202-204

2000

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Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion

IEEE photonics technology letters, 1995-09, Vol.7 (9), p.1016-1018

1995

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Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP

Journal of crystal growth, 1992, Vol.116 (1), p.75-80

1992

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1.5-μm DFB lasers with new current-induced gain gratings

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.371-374

1995

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Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration

Journal of applied physics, 1995-11, Vol.78 (9), p.5638-5641

1995

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New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product

Journal of lightwave technology, 1992-12, Vol.10 (12), p.1935-1938

1992

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20 GHz bandwidth 1.5μm wavelength VUG DFB laser using a zero net strain InxGa1-xAsyP1-y well active structure grown at constant y

Electronics letters, 1993-07, Vol.29 (14), p.1290-1291

1993

Volltextzugriff (PDF)

Experimental study of the hydrogen complexes in indium phosphide

Physical review. B, Condensed matter, 1993-12, Vol.48 (24), p.17776-17790

1993

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Epitaxial overgrowth on nanometric InP wires processed by reactive ion etching

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.395-398

1991

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Application of AP MOVPE to a new butt-coupling scheme

Journal of crystal growth, 1991, Vol.107 (1), p.850-854

1991

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Iron redistribution studies in adjacent acceptor-doped InP layers: application to a new SI-BH laser structure

Journal of crystal growth, 1992-11, Vol.124 (1), p.777-781

1992

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State of the art 1.3μm lasers by atmospheric pressure MOVPE using tertiary butylphosphine

Electronics letters, 1991-05, Vol.27 (11), p.1005-1006

1991

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Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure

Journal of crystal growth, 1989-03, Vol.94 (3), p.762-766

1989

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Absorption-controlled tunable DFB amplifier-filters

Electronics letters, 1994-08, Vol.30 (16), p.1294-1296

1994

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Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE

Journal of crystal growth, 1991-02, Vol.108 (3), p.554-560

1991

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Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation

Journal of crystal growth, 1992-11, Vol.124 (1-4), p.260-264

1992

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Simple approach for monolithic integration of DFB laser and passive waveguide

Electronics letters, 1991-01, Vol.27 (18), p.1683-1685

1991

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Extremely low threshold operation of 1.5 μm GaInAsP/InP buried ridge stripe lasers

Electronics letters, 1989-10, Vol.25 (22), p.1477

1989

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High static performance GaInAs-GaInAsP SCH MQW 1.5 mu m wavelength buried ridge stripe lasers

IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1794-1797

1991

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The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

Journal of electronic materials, 1986-07, Vol.15 (4), p.205-213

1986

Volltextzugriff (PDF)

Luminescence of narrow RIE etched In1−xGaxAs/InP and GaAs/Ga1−xAlxAs quantum wires

Surface science, 1992, Vol.267 (1-3), p.253-256

1992

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Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 mum

IEEE photonics technology letters, 2000-02, Vol.12 (2), p.202-204

2000

Volltextzugriff (PDF)

Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 [mu]m

IEEE photonics technology letters, 2000-02, Vol.12 (2), p.202

2000

Volltextzugriff (PDF)

Low-threshold 1.3 μm GaInAsP/InP lasers grown by atmospheric-pressure MOVPE

Electronics letters, 1985-06, Vol.21 (12), p.521-522

1985

Volltextzugriff (PDF)

Extremely Low Threshold Butt-Jointed 1.5 µm DBR Lasers

Japanese Journal of Applied Physics, 1990-02, Vol.29 (2A), p.L312

1990

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Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 μm

Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion

Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP

1.5-μm DFB lasers with new current-induced gain gratings

Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration

New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product

20 GHz bandwidth 1.5μm wavelength VUG DFB laser using a zero net strain InxGa1-xAsyP1-y well active structure grown at constant y

Experimental study of the hydrogen complexes in indium phosphide

Epitaxial overgrowth on nanometric InP wires processed by reactive ion etching

Application of AP MOVPE to a new butt-coupling scheme

Iron redistribution studies in adjacent acceptor-doped InP layers: application to a new SI-BH laser structure

State of the art 1.3μm lasers by atmospheric pressure MOVPE using tertiary butylphosphine

Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure

Absorption-controlled tunable DFB amplifier-filters

Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE

Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation

Simple approach for monolithic integration of DFB laser and passive waveguide

Extremely low threshold operation of 1.5 μm GaInAsP/InP buried ridge stripe lasers

High static performance GaInAs-GaInAsP SCH MQW 1.5 mu m wavelength buried ridge stripe lasers

The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

Luminescence of narrow RIE etched In1−xGaxAs/InP and GaAs/Ga1−xAlxAs quantum wires

Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 mum

Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 [mu]m

Low-threshold 1.3 μm GaInAsP/InP lasers grown by atmospheric-pressure MOVPE

Extremely Low Threshold Butt-Jointed 1.5 µm DBR Lasers

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