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Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

IEEE electron device letters, 2006-03, Vol.27 (3), p.142-144

2006

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Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1-y buffers by molecular beam epitaxy

Solid-state electronics, 2009, Vol.53 (1), p.102-106

2009

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Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Solid-state electronics, 2013-02, Vol.80, p.19-22

2013

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Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells

Solar energy materials and solar cells, 2001, Vol.69 (1), p.85-91

2001

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Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Solid-state electronics, 2013-02, Vol.80, p.19-22

2013

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0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy

IEEE electron device letters, 2003-09, Vol.24 (9), p.538-540

2003

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Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

Journal of applied physics, 2005-09, Vol.98 (5)

2005

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Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN

Microelectronics and reliability, 2016-01, Vol.56, p.45-48

2016

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Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell

Journal of crystal growth, 2011-11, Vol.335 (1), p.66-69

2011

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High-performance, metamorphic InxGa1-xAs tunnel diodes grown by molecular beam epitaxy

IEEE electron device letters, 2003-10, Vol.24 (10), p.613-615

2003

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Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN

physica status solidi (b), 2001-12, Vol.228 (3), p.937-946

2001

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Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps

Microelectronics and reliability, 2015-11, Vol.55 (11), p.2258-2262

2015

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High-performance In/sub 0.53/Ga/sub 0.47/As thermophotovoltaic devices grown by solid source molecular beam epitaxy

IEEE electron device letters, 2002-12, Vol.23 (12), p.697-699

2002

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Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs

Microelectronics and reliability, 2016-01, Vol.56, p.37-44

2016

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Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN

Microelectronics and reliability, 2016-01, Vol.56, p.45-48

2016

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Investigations of high-performance GaAs solar cells grown on Ge-Si1-xGex-Si substrates

IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1055-1060

2005

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Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

Applied physics letters, 2006-02, Vol.88 (8)

2006

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Metamorphic In 0.7Al 0.3As/In 0.69Ga 0.31As thermophotovoltaic devices grown on graded InAs y P 1− y buffers by molecular beam epitaxy

Solid-state electronics, 2009, Vol.53 (1), p.102-106

2009

Volltextzugriff (PDF)

Molecular beam epitaxy grown GaNAsSb 1eV photovoltaic cell

Journal of crystal growth, 2011-11, Vol.335 (1), p.66-69

2011

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Photonics laboratory with emphasis on technical diversity

IEEE transactions on education, 1998-08, Vol.41 (3), p.194-202

1998

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Hydrogen-interstitial Zn defect complexes and their effects on the device characteristics of heteroepitaxial p{sup +}n InP cell structures

1997

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The effects of trap-induced lifetime variations on the design and performance of high-efficiency GaAs solar cells

IEEE transactions on electron devices, 1991-11, Vol.38 (11), p.2402-2409

1991

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High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics

Solar energy materials and solar cells, 2001-02, Vol.66 (1), p.621-630

2001

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0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices grown on InAsyP1-y step-graded buffers by molecular beam epitaxy

IEEE electron device letters, 2003-09, Vol.24 (9), p.538

2003

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Capture Kinetics of Electron Traps in MBE-Grown n-GaN

Physica status solidi. B. Basic research, 2001-11, Vol.228 (1), p.309-313

2001

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Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1-y buffers by molecular beam epitaxy

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN

Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell

High-performance, metamorphic InxGa1-xAs tunnel diodes grown by molecular beam epitaxy

Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN

Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps

High-performance In/sub 0.53/Ga/sub 0.47/As thermophotovoltaic devices grown by solid source molecular beam epitaxy

Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs

Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN

Investigations of high-performance GaAs solar cells grown on Ge-Si1-xGex-Si substrates

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

Metamorphic In 0.7Al 0.3As/In 0.69Ga 0.31As thermophotovoltaic devices grown on graded InAs y P 1− y buffers by molecular beam epitaxy

Molecular beam epitaxy grown GaNAsSb 1eV photovoltaic cell

Photonics laboratory with emphasis on technical diversity

Hydrogen-interstitial Zn defect complexes and their effects on the device characteristics of heteroepitaxial p{sup +}n InP cell structures

The effects of trap-induced lifetime variations on the design and performance of high-efficiency GaAs solar cells

High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics

0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices grown on InAsyP1-y step-graded buffers by molecular beam epitaxy

Capture Kinetics of Electron Traps in MBE-Grown n-GaN

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