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Highly-Integrated Low-Power 60 GHz Multichannel Transceiver for Radar Applications in 28 nm CMOS

2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, p.650-653

2019

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Transformer-Coupled Octa-Core 60 GHz Push-Push VCO in a 45-nm RF-SOI CMOS Technology

2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 2019, p.1-4

2019

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Experimental study on substrate coupling in bulk silicon and RF-SOI CMOS up to 110 GHz

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017, p.111-113

2017

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Indications of effects of phonon-roton states on electronic transport

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1994-05, Vol.181-182 (1-2), p.916-920

1994

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Systematic Experimental fT and fmax Comparison of 40-nm Bulk CMOS versus 45-nm SOI Technology

2019 14th European Microwave Integrated Circuits Conference (EuMIC), 2019, p.200-203

2019

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A 1.8-mW low power, PVT-resilient, high linearity, modified Gilbert-cell down-conversion mixer in 28-nm CMOS

2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2018, p.19-22

2018

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LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2019, p.1-3

2019

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Experimental Considerations on Accurate fT and fmax Extraction for MOS Transistors Measured Up to 110 GHz

2019 92nd ARFTG Microwave Measurement Conference (ARFTG), 2019, p.1-4

2019

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60 GHz Tail-Node-Coupled Multi-Core Push-Push VCOs in 22 nm FD SOI CMOS Technology

2018 48th European Microwave Conference (EuMC), 2018, p.997-1000

2018

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A Quad-Core 60 GHz Push-Push 45 nm SOI CMOS VCO with −101.7 dBc/Hz Phase Noise at 1 MHz offset, 19 % Continuous FTR and −187 dBc/Hz FoMT

ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 2018, p.138-141

2018

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Experimental Study on Crosstalk Reduction between Integrated Inductors up to Millimeter-Wave Regime

2018 91st ARFTG Microwave Measurement Conference (ARFTG), 2018, p.1-4

2018

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Experimental Comparison of Integrated Transformers in a 28 nm Bulk CMOS Technology

2018 48th European Microwave Conference (EuMC), 2018, p.1097-1100

2018

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Indications of effects of phonon-roton states on electronic transport

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1994, Vol.181-82, p.916-920

1994

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Highly-Integrated Low-Power 60 GHz Multichannel Transceiver for Radar Applications in 28 nm CMOS

Transformer-Coupled Octa-Core 60 GHz Push-Push VCO in a 45-nm RF-SOI CMOS Technology

Experimental study on substrate coupling in bulk silicon and RF-SOI CMOS up to 110 GHz

Indications of effects of phonon-roton states on electronic transport

Systematic Experimental fT and fmax Comparison of 40-nm Bulk CMOS versus 45-nm SOI Technology

A 1.8-mW low power, PVT-resilient, high linearity, modified Gilbert-cell down-conversion mixer in 28-nm CMOS

LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

Experimental Considerations on Accurate fT and fmax Extraction for MOS Transistors Measured Up to 110 GHz

60 GHz Tail-Node-Coupled Multi-Core Push-Push VCOs in 22 nm FD SOI CMOS Technology

A Quad-Core 60 GHz Push-Push 45 nm SOI CMOS VCO with −101.7 dBc/Hz Phase Noise at 1 MHz offset, 19 % Continuous FTR and −187 dBc/Hz FoMT

Experimental Study on Crosstalk Reduction between Integrated Inductors up to Millimeter-Wave Regime

Experimental Comparison of Integrated Transformers in a 28 nm Bulk CMOS Technology

Indications of effects of phonon-roton states on electronic transport

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