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Tunnel field-effect transistors as energy-efficient electronic switches

Nature (London), 2011-11, Vol.479 (7373), p.329-337

2011

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Temperature mapping of operating nanoscale devices by scanning probe thermometry

Nature communications, 2016-03, Vol.7 (1), p.10874-6, Article 10874

2016

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Quantitative Thermometry of Nanoscale Hot Spots

Nano letters, 2012-02, Vol.12 (2), p.596-601

2012

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Donor deactivation in silicon nanostructures

Nature nanotechnology, 2009-02, Vol.4 (2), p.103-107

2009

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III–V compound semiconductor transistors—from planar to nanowire structures

MRS bulletin, 2014-08, Vol.39 (8), p.668-677

2014

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Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon

ACS nano, 2018-03, Vol.12 (3), p.2169-2175

2018

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Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

Journal of applied physics, 2015-04, Vol.117 (14)

2015

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Vertical III–V Nanowire Device Integration on Si(100)

Nano letters, 2014-04, Vol.14 (4), p.1914-1920

2014

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Transport Properties of a Single-Molecule Diode

ACS nano, 2012-06, Vol.6 (6), p.4931-4939

2012

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Statistical approach to investigating transport through single molecules

Physical review letters, 2007-04, Vol.98 (17), p.176807-176807, Article 176807

2007

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Organometallic Single-Molecule Electronics: Tuning Electron Transport through X(diphosphine)2FeC4Fe(diphosphine)2X Building Blocks by Varying the Fe–X–Au Anchoring Scheme from Coordinative to Covalent

Journal of the American Chemical Society, 2014-10, Vol.136 (41), p.14560-14569

2014

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Reversible and Controllable Switching of a Single-Molecule Junction

Small (Weinheim an der Bergstrasse, Germany), 2006-08, Vol.2 (8-9), p.973-977

2006

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Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor

Small (Weinheim an der Bergstrasse, Germany), 2006-01, Vol.2 (1), p.85-88

2006

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Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

Nanotechnology, 2019-02, Vol.30 (8), p.84004

2019

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Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Capturing the embryonic stages of self-assembly - design rules for molecular computation

Scientific reports, 2015-05, Vol.5 (1), p.10116, Article 10116

2015

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Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy

Crystal growth & design, 2017-12, Vol.17 (12), p.6297-6302

2017

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InAs nanowire growth on oxide-masked 〈111〉 silicon

Journal of crystal growth, 2012-04, Vol.344 (1), p.31-37

2012

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Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

Beilstein journal of nanotechnology, 2018-01, Vol.9 (1), p.129-136

2018

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Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

Beilstein journal of nanotechnology, 2015, Vol.6 (1), p.2193-2206

2015

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Nanoelectrical analysis of single molecules and atomic-scale materials at the solid/liquid interface

Nature materials, 2014-10, Vol.13 (10), p.947-953

2014

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A robust molecular probe for Ångstrom-scale analytics in liquids

Nature communications, 2016-08, Vol.7 (1), p.12403-12403, Article 12403

2016

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Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine

Nano letters, 2009-01, Vol.9 (1), p.173-177

2009

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Quantum Computing Technology and Roadmap

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.25-30

Riel, Heike

2022

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Influence of the Anchor Group on Charge Transport through Single-Molecule Junctions

Chemphyschem, 2011-06, Vol.12 (9), p.1677-1682

2011

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Tunnel field-effect transistors as energy-efficient electronic switches

Temperature mapping of operating nanoscale devices by scanning probe thermometry

Quantitative Thermometry of Nanoscale Hot Spots

Donor deactivation in silicon nanostructures

III–V compound semiconductor transistors—from planar to nanowire structures

Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon

Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

Vertical III–V Nanowire Device Integration on Si(100)

Transport Properties of a Single-Molecule Diode

Statistical approach to investigating transport through single molecules

Organometallic Single-Molecule Electronics: Tuning Electron Transport through X(diphosphine)2FeC4Fe(diphosphine)2X Building Blocks by Varying the Fe–X–Au Anchoring Scheme from Coordinative to Covalent

Reversible and Controllable Switching of a Single-Molecule Junction

Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor

Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires

Capturing the embryonic stages of self-assembly - design rules for molecular computation

Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy

InAs nanowire growth on oxide-masked 〈111〉 silicon

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

Nanoelectrical analysis of single molecules and atomic-scale materials at the solid/liquid interface

A robust molecular probe for Ångstrom-scale analytics in liquids

Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine

Quantum Computing Technology and Roadmap

Influence of the Anchor Group on Charge Transport through Single-Molecule Junctions

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