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A review of the theory and technology for ohmic contacts to group III–V compound semiconductors

Solid-state electronics, 1975-06, Vol.18 (6), p.541-550

Rideout, V.L.

1975

Volltextzugriff (PDF)

A review of the theory, technology and applications of metal-semiconductor rectifiers

Thin Solid Films, 1978-02, Vol.48 (3), p.261-291

Rideout, V.L.

1978

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An Improved Polishing Technique for GaAs

Journal of the Electrochemical Society, 1972-01, Vol.119 (12), p.1778

Rideout, V. L.

1972

Volltextzugriff (PDF)

Design of ion-implanted MOSFET's with very small physical dimensions

IEEE journal of solid-state circuits, 1974-10, Vol.9 (5), p.256-268

1974

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Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions

Proceedings of the IEEE, 1999-04, Vol.87 (4), p.668-678

1999

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Very small MOSFET's for low-temperature operation

IEEE transactions on electron devices, 1977-03, Vol.24 (3), p.218-229

1977

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PRESSURE SENSITIVITY OF GOLD-POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES

Applied physics letters, 1967-06, Vol.10 (11), p.329-332

1967

Volltextzugriff (PDF)

Ion implanted MOSFET's with very short channel lengths

IEEE Solid-State Circuits Society Newsletter, 2007, Vol.12 (1), p.36-37

2007

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One-device cells for dynamic random-access memories: A tutorial

IEEE transactions on electron devices, 1979-06, Vol.26 (6), p.839-852

Rideout, V.L.

1979

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Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers

Solid-state electronics, 1969-01, Vol.12 (2), p.89-105

1969

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MOSFET's with PolySilicon gates self-aligned to the field isolation and to the source and drain regions

IEEE transactions on electron devices, 1979-07, Vol.26 (7), p.1047-1052

1979

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Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contacts

Solid-state electronics, 1970-01, Vol.13 (7), p.993-1009

1970

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Al Coverage of Surface Steps at SiO2 Insulated Polycrystalline Si Boundaries: Al Evaporation in Vacuum and Low Pressure Ar

Journal of the Electrochemical Society, 1979-01, Vol.126 (8), p.1335-1338

1979

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GaAsGaAlAs heterojunction transistor for high frequency operation

Solid-state electronics, 1972-12, Vol.15 (12), p.1339-1343

1972

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Device Design Considerations for Ion Implanted n-Channel MOSFETs

IBM journal of research and development, 1975-01, Vol.19 (1), p.50-59

1975

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THERMIONIC-FIELD RESISTANCE MAXIMA IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS

Applied physics letters, 1969-01, Vol.14 (3), p.85-88

1969

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A convenient operational equivalent to the fowler photothreshold plot

Surface science, 1972-01, Vol.32 (3), p.591-594

1972

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Optical Constants of Evaporated Gold and Platinum Films on Potassium Tantalate

Journal of the Optical Society of America (1930), 1966-06, Vol.56 (6), p.749

1966

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ChemInform Abstract: VERBESSERTES POLIERVERFAHREN FUER GAAS

Chemischer Informationsdienst, 1973-03, Vol.4 (13)

RIDEOUT, V. L.

1973

Volltextzugriff (PDF)

Dependence of barrier height on energy gap in Au n-type GaAs1− xPx Schottky diodes

Solid-state electronics, 1974-01, Vol.17 (10), p.1107-1108

Rideout, V.Leo

1974

Volltextzugriff (PDF)

ChemInform Abstract: ALUMINUM COVERAGE OF SURFACE STEPS AT SILICON DIOXIDE INSULATED POLYCRYSTALLINE SILICON BOUNDARIES: ALUMINUM EVAPORATION IN VACUUM AND LOW PRESSURE ARGON

Chemischer Informationsdienst, 1979-12, Vol.10 (50)

1979

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Device design considerations for ion implanted MOSFETs

1973 International Electron Devices Meeting, 1973, p.148-151

1973

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A One-Device Memory Cell Using a Single Layer of Polysilicon and a Self-Registering Metal-to-Polysilicon Contact

IBM journal of research and development, 1980-05, Vol.24 (3), p.339-347

1980

Volltextzugriff (PDF)

Ion implanted MOSFETs with very short channel lengths

1973 International Electron Devices Meeting, 1973, p.152-155

1973

Volltextzugriff (PDF)

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A review of the theory and technology for ohmic contacts to group III–V compound semiconductors

A review of the theory, technology and applications of metal-semiconductor rectifiers

An Improved Polishing Technique for GaAs

Design of ion-implanted MOSFET's with very small physical dimensions

Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions

Very small MOSFET's for low-temperature operation

PRESSURE SENSITIVITY OF GOLD-POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES

Ion implanted MOSFET's with very short channel lengths

One-device cells for dynamic random-access memories: A tutorial

Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers

MOSFET's with PolySilicon gates self-aligned to the field isolation and to the source and drain regions

Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contacts

Al Coverage of Surface Steps at SiO2 Insulated Polycrystalline Si Boundaries: Al Evaporation in Vacuum and Low Pressure Ar

GaAsGaAlAs heterojunction transistor for high frequency operation

Device Design Considerations for Ion Implanted n-Channel MOSFETs

THERMIONIC-FIELD RESISTANCE MAXIMA IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS

A convenient operational equivalent to the fowler photothreshold plot

Optical Constants of Evaporated Gold and Platinum Films on Potassium Tantalate

ChemInform Abstract: VERBESSERTES POLIERVERFAHREN FUER GAAS

Dependence of barrier height on energy gap in Au n-type GaAs1− xPx Schottky diodes

ChemInform Abstract: ALUMINUM COVERAGE OF SURFACE STEPS AT SILICON DIOXIDE INSULATED POLYCRYSTALLINE SILICON BOUNDARIES: ALUMINUM EVAPORATION IN VACUUM AND LOW PRESSURE ARGON

Device design considerations for ion implanted MOSFETs

A One-Device Memory Cell Using a Single Layer of Polysilicon and a Self-Registering Metal-to-Polysilicon Contact

Ion implanted MOSFETs with very short channel lengths

A prime editor mouse to model a broad spectrum of somatic mutations in vivo

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