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Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches

Journal of applied physics, 2014-02, Vol.115 (5)

2014

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Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

Journal of applied physics, 2016-02, Vol.119 (8)

2016

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Electronic structure and electron mobility in Si1– xGex nanowires

Applied physics letters, 2017-01, Vol.110 (5)

2017

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Quenching Statistics of Silicon Single Photon Avalanche Diodes

IEEE journal of the Electron Devices Society, 2021-01, Vol.9, p.1098-1102

2021

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Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.584-592

2022

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Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in \langle \hbox\rangle-, \langle \hbox\rangle-, and \langle \hbox\rangle -Oriented Si Nanowires

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1480-1487

2012

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An Efficient Nonlocal Hot Electron Model Accounting for Electron-Electron Scattering

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.983-993

2012

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Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys

Physical review. B, Condensed matter and materials physics, 2009-06, Vol.79 (24), Article 245201

2009

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A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Journal of physics. D, Applied physics, 2022-12, Vol.55 (50), p.505102

2022

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On the convergence of the recurrence solution of McIntyre's local and non-local avalanche triggering probability equations for SPAD compact models

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.277-280

2022

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Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Solid-state electronics, 2022-08, Vol.194, p.108376, Article 108376

2022

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Experimental gm/ID Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

IEEE transactions on electron devices, 2018-01, Vol.65 (1)

2018

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Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in 〈001〉-, 〈110〉-, and 〈111〉-Oriented Si Nanowires

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1480-1487

2012

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Electronic structure and electron mobility in Si 1– x Ge x nanowires

Applied physics letters, 2017-01, Vol.110 (5)

2017

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Electronic structure and electron mobility in Si1– x Ge x nanowires

Applied physics letters, 2017-01, Vol.110 (5)

2017

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Introduction

Journal of computational electronics, 2013-12, Vol.12 (4), p.539-541

2013

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Introduction

Journal of computational electronics, 2013-12, Vol.12 (4), p.539-541

2013

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Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.369-372

2023

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Experimental /} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.11-18

2018

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Quantum Modeling of the Carrier Mobility in FDSOI Devices

IEEE transactions on electron devices, 2014-09, Vol.61 (9), p.3096-3102

2014

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Characterization and Modeling of Gate-Induced-Drain-Leakage

IEICE transactions on electronics, 2005-05, Vol.E88-C (5), p.829-837

GILIBERT, F.

2005

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Introduction

Journal of computational electronics, 2013, Vol.12 (4), p.539-541

2013

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Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, p.224-227

2018

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Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high- κ /SiO2 gate stacks

Applied physics letters, 2015-01, Vol.106 (2)

2015

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Semi-Empirical model for optical properties of \text\text alloys accounting for strain and temperature

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.267-270

2021

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Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches

Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach

Electronic structure and electron mobility in Si1– xGex nanowires

Quenching Statistics of Silicon Single Photon Avalanche Diodes

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in \langle \hbox\rangle-, \langle \hbox\rangle-, and \langle \hbox\rangle -Oriented Si Nanowires

An Efficient Nonlocal Hot Electron Model Accounting for Electron-Electron Scattering

Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys

A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

On the convergence of the recurrence solution of McIntyre's local and non-local avalanche triggering probability equations for SPAD compact models

Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Experimental gm/ID Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in 〈001〉-, 〈110〉-, and 〈111〉-Oriented Si Nanowires

Electronic structure and electron mobility in Si 1– x Ge x nanowires

Electronic structure and electron mobility in Si1– x Ge x nanowires

Introduction

Introduction

Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations

Experimental /} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

Quantum Modeling of the Carrier Mobility in FDSOI Devices

Characterization and Modeling of Gate-Induced-Drain-Leakage

Introduction

Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high- κ /SiO2 gate stacks

Semi-Empirical model for optical properties of \text\text alloys accounting for strain and temperature

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