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Organic Spin‐Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering

Advanced materials (Weinheim), 2017-01, Vol.29 (2), p.np-n/a

2017

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Controllable, Wide‐Ranging n‐Doping and p‐Doping of Monolayer Group 6 Transition‐Metal Disulfides and Diselenides

Advanced materials (Weinheim), 2018-09, Vol.30 (36), p.e1802991-n/a

2018

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Toward Clean and Crackless Transfer of Graphene

ACS nano, 2011-11, Vol.5 (11), p.9144-9153

2011

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Broadband optical properties of large-area monolayer CVD molybdenum disulfide

Physical review. B, Condensed matter and materials physics, 2014-11, Vol.90 (19), Article 195434

2014

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Molecular beam epitaxy growth and structure of self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures

New journal of physics, 2017-08, Vol.19 (8), p.085002

2017

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Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors

Applied physics letters, 2019-08, Vol.115 (7)

2019

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Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

ACS applied materials & interfaces, 2015-12, Vol.7 (49), p.27306-27313

2015

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Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function

Nanoscale, 2018-01, Vol.10 (1), p.319-327

2018

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Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface

Nano letters, 2013-01, Vol.13 (1), p.131-136

2013

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Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

Scientific reports, 2013-04, Vol.3 (1), p.1757, Article 1757

2013

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Rapid, quantitative therapeutic screening for Alzheimer's enzymes enabled by optimal signal transduction with transistors

Analyst (London), 2020-04, Vol.145 (8), p.2925-2936

2020

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Substrate-mediated hyperbolic phonon polaritons in MoO3

Nanophotonics (Berlin, Germany), 2021-02, Vol.10 (5), p.1517-1527

2021

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Polymorphism in the 1:1 Charge-Transfer Complex DBTTF-TCNQ and Its Effects on Optical and Electronic Properties

Advanced electronic materials, 2016-10, Vol.2 (10), p.n/a

2016

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Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping

AIP advances, 2022-08, Vol.12 (8), p.085222-085222-7

2022

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Controllable, Wide‐Ranging n‐Doping and p‐Doping of Monolayer Group 6 Transition‐Metal Disulfides and Diselenides

Advanced materials (Weinheim), 2018-12, Vol.30 (50), p.e1806345-n/a

2018

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Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Attachment of a Diruthenium Compound to Au and SiO2/Si Surfaces by “Click” Chemistry

Langmuir, 2014-09, Vol.30 (34), p.10280-10289

2014

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Observation of spin-polarized electron transport in Alq3 by using a low work function metal

Applied physics letters, 2012-09, Vol.101 (10)

2012

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Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors

Nano letters, 2005-12, Vol.5 (12), p.2519-2523

2005

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Demonstration of Molecular Assembly on Si (100) for CMOS-Compatible Molecule-Based Electronic Devices

Journal of the American Chemical Society, 2008-04, Vol.130 (13), p.4259-4261

2008

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Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering

Applied physics letters, 2019-08, Vol.115 (7)

2019

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Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

Nanotechnology, 2011-06, Vol.22 (25), p.254020-254020

2011

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Interface Engineering To Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer

ACS nano, 2014-07, Vol.8 (7), p.7192-7201

2014

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Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation

ACS omega, 2017-05, Vol.2 (5), p.2326-2332

2017

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Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Organic Spin‐Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering

Controllable, Wide‐Ranging n‐Doping and p‐Doping of Monolayer Group 6 Transition‐Metal Disulfides and Diselenides

Toward Clean and Crackless Transfer of Graphene

Broadband optical properties of large-area monolayer CVD molybdenum disulfide

Molecular beam epitaxy growth and structure of self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures

Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors

Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function

Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

Rapid, quantitative therapeutic screening for Alzheimer's enzymes enabled by optimal signal transduction with transistors

Substrate-mediated hyperbolic phonon polaritons in MoO3

Polymorphism in the 1:1 Charge-Transfer Complex DBTTF-TCNQ and Its Effects on Optical and Electronic Properties

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping

Controllable, Wide‐Ranging n‐Doping and p‐Doping of Monolayer Group 6 Transition‐Metal Disulfides and Diselenides

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

Attachment of a Diruthenium Compound to Au and SiO2/Si Surfaces by “Click” Chemistry

Observation of spin-polarized electron transport in Alq3 by using a low work function metal

Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors

Demonstration of Molecular Assembly on Si (100) for CMOS-Compatible Molecule-Based Electronic Devices

Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering

Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

Interface Engineering To Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer

Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation

Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

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