UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 149

Sortiert nach

27 kV, 20 A 4H-SiC n-IGBTs

Materials science forum, 2015-06, Vol.821-823, p.847-850

2015

Volltextzugriff (PDF)

Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT

IEEE transactions on industry applications, 2008-05, Vol.44 (3), p.887-893

2008

Volltextzugriff (PDF)

SiC MOSFET Reliability Update

Materials science forum, 2012-05, Vol.717-720, p.1073-1076

2012

Volltextzugriff (PDF)

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1864-1870

2008

Volltextzugriff (PDF)

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

Volltextzugriff (PDF)

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Materials science forum, 2013-01, Vol.740-742, p.978-981

2013

Volltextzugriff (PDF)

20 kV 4H-SiC N-IGBTs

Materials science forum, 2014-02, Vol.778-780, p.1030-1033

2014

Volltextzugriff (PDF)

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Materials science forum, 2010-04, Vol.645-648, p.969-974

2010

Volltextzugriff (PDF)

15 kV IGBTs in 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.954-957, Article 954

2013

Volltextzugriff (PDF)

Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules

Materials science forum, 2010-04, Vol.645-648, p.1119-1122

2010

Volltextzugriff (PDF)

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

Materials science forum, 2009-01, Vol.600-603, p.931-934

2009

Volltextzugriff (PDF)

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Materials science forum, 2013-01, Vol.740-742, p.895-898

2013

Volltextzugriff (PDF)

Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Materials science forum, 2009-03, Vol.615-617, p.749-752

2009

Volltextzugriff (PDF)

Critical Technical Issues in High Voltage SiC Power Devices

Materials science forum, 2009-01, Vol.600-603, p.895-900

2009

Volltextzugriff (PDF)

Improvements to the Analytical Model to Describe UIS Events

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3848-3853

2022

Volltextzugriff (PDF)

4H-SiC DMOSFETs for High Speed Switching Applications

Materials Science Forum, 2005-05, Vol.483-485, p.797-800

2005

Volltextzugriff (PDF)

Surge current failure mechanisms in 4H-SiC JBS rectifiers

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.415-418

2018

Volltextzugriff (PDF)

15 kV n-GTOs in 4H-SiC

Materials science forum, 2019-07, Vol.963, p.651-654

2019

Volltextzugriff (PDF)

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

Materials science forum, 2018-06, Vol.924, p.559-562

2018

Volltextzugriff (PDF)

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

Materials science forum, 2020-07, Vol.1004, p.992-997, Article 992

2020

Volltextzugriff (PDF)

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

Materials science forum, 2006-10, Vol.527-529, p.1409-1412

2006

Volltextzugriff (PDF)

SiC BJT Technology for Power Switching and RF Applications

Materials science forum, 2004-06, Vol.457-460, p.1141-1144

2004

Volltextzugriff (PDF)

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

Materials Science Forum, 2005-05, Vol.483-485, p.901-904

2005

Volltextzugriff (PDF)

Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions

Materials science forum, 2019-07, Vol.963, p.805-810, Article 805

2019

Volltextzugriff (PDF)

High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers

Materials science forum, 2002-04, Vol.389-393, p.1265-1268

2002

Volltextzugriff (PDF)

1 – 25 von 149

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(124)
Mit Volltextzugriff
(137)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(72)
Life Sciences & Biomedicine
(37)
Technology
(33)
Humans
(27)
Materials Science
(22)
Silicon Carbide
(22)
Female
(20)
Male
(19)
Materials Science, Multidisciplinary
(18)
Engineering
(14)
High Voltage
(14)
Engineering, Electrical & Electronic
(13)
Infant
(13)
Infectious Diseases
(12)
Mosfet
(12)
Child
(11)
Child, Preschool
(11)
Children
(11)
Electric Potential
(11)
Immunology
(11)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

27 kV, 20 A 4H-SiC n-IGBTs

Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT

SiC MOSFET Reliability Update

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

20 kV 4H-SiC N-IGBTs

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

15 kV IGBTs in 4H-SiC

Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Critical Technical Issues in High Voltage SiC Power Devices

Improvements to the Analytical Model to Describe UIS Events

4H-SiC DMOSFETs for High Speed Switching Applications

Surge current failure mechanisms in 4H-SiC JBS rectifiers

15 kV n-GTOs in 4H-SiC

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

SiC BJT Technology for Power Switching and RF Applications

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions

High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers

Suchergebnisse filtern