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Anharmonicity and Disorder in the Black Phases of Cesium Lead Iodide Used for Stable Inorganic Perovskite Solar Cells

ACS nano, 2018-04, Vol.12 (4), p.3477-3486

2018

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Investigation of III-V GaP solar cell on silicon substrate

EPJ Photovoltaics, 2023, Vol.14, p.31

2023

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Atomistic simulations of the optical absorption of type-II CdSe/ZnTe superlattices

Nanoscale research letters, 2012-10, Vol.7 (1), p.543-543, Article 543

2012

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First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE

Physica status solidi. C, 2009-10, Vol.6 (10), p.2207-2211

2009

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Energy-band structure in strained silicon: A 20-band k⋅p and Bir–Pikus Hamiltonian model

Journal of applied physics, 2003-08, Vol.94 (3), p.1795-1799

2003

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Symmetry-Based Tight Binding Modeling of Halide Perovskite Semiconductors

The journal of physical chemistry letters, 2016-10, Vol.7 (19), p.3833-3840

2016

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Strained silicon on SiGe: Temperature dependence of carrier effective masses

Journal of applied physics, 2003-10, Vol.94 (8), p.5088-5094

2003

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Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature

Nature energy, 2018-03, Vol.3 (3), p.236-242

2018

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Light emitting diodes on silicon substrates: preliminary results

Physica status solidi. C, 2009-10, Vol.6 (10), p.2212-2216

2009

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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells

Solar energy materials and solar cells, 2021-03, Vol.221, p.110888, Article 110888

2021

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Unraveling Urban NOx Emission Sources in Polluted Arctic Wintertime Using NO2 Nitrogen Isotopes

Journal of geophysical research. Atmospheres, 2024-10, Vol.129 (20)

2024

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Unraveling Urban NO x Emission Sources in Polluted Arctic Wintertime Using NO 2 Nitrogen Isotopes

Journal of geophysical research. Atmospheres, 2024-10, Vol.129 (20)

2024

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Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications

2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2020, p.0747-0751

2020

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Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen

Applied physics letters, 2011-06, Vol.98 (25), p.251110-251110-3

2011

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30-band k.p method for quantum semiconductor heterostructures

Applied physics letters, 2011-06, Vol.98

2011

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Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

Applied surface science, 2012-01, Vol.258 (7), p.2808-2815

2012

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Photoelectrochemical water oxidation of GaP1−xSbx with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

Sustainable energy & fuels, 2019, Vol.3 (7), p.1720-1729

2019

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Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

Sustainable energy & fuels, 2019-07, Vol.3 (7), p.1720-1729

2019

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Photoelectrochemical water oxidation of GaPSb with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

Sustainable energy & fuels, 2019-06, Vol.3 (7), p.172-1729

2019

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Intensive chemotherapy as salvage treatment for solid tumors: focus on germ cell cancer

Brazilian journal of medical and biological research, 2015-01, Vol.48 (1), p.13-24

2015

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Quantitative optoelectronic measurements of carrier thermodynamics properties in quantum well hot carrier solar cell

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017, p.2192-2194

2017

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Raman investigation of GaP–Si interfaces grown by molecular beam epitaxy

Thin solid films, 2013-08, Vol.541, p.72-75

2013

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Energy-band structure of Ge, Si, and GaAs: A thirty-band k ∙ p method

Physical review. B, Condensed matter and materials physics, 2004-12, Vol.70 (23), Article 235204

2004

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Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD

Journal of physics. D, Applied physics, 2008-08, Vol.41 (16), p.165505-165505 (8)

2008

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InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes

Optical and quantum electronics, 2008-11, Vol.40 (14-15), p.1233-1238

2008

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Anharmonicity and Disorder in the Black Phases of Cesium Lead Iodide Used for Stable Inorganic Perovskite Solar Cells

Investigation of III-V GaP solar cell on silicon substrate

Atomistic simulations of the optical absorption of type-II CdSe/ZnTe superlattices

First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE

Energy-band structure in strained silicon: A 20-band k⋅p and Bir–Pikus Hamiltonian model

Symmetry-Based Tight Binding Modeling of Halide Perovskite Semiconductors

Strained silicon on SiGe: Temperature dependence of carrier effective masses

Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature

Light emitting diodes on silicon substrates: preliminary results

Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells

Unraveling Urban NOx Emission Sources in Polluted Arctic Wintertime Using NO2 Nitrogen Isotopes

Unraveling Urban NO x Emission Sources in Polluted Arctic Wintertime Using NO 2 Nitrogen Isotopes

Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications

Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen

30-band k.p method for quantum semiconductor heterostructures

Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

Photoelectrochemical water oxidation of GaP1−xSbx with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

Photoelectrochemical water oxidation of GaPSb with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

Intensive chemotherapy as salvage treatment for solid tumors: focus on germ cell cancer

Quantitative optoelectronic measurements of carrier thermodynamics properties in quantum well hot carrier solar cell

Raman investigation of GaP–Si interfaces grown by molecular beam epitaxy

Energy-band structure of Ge, Si, and GaAs: A thirty-band k ∙ p method

Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD

InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes

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