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Tuning Electrical Properties and Achieving High TCR in P-Doped a-SixC1−x:H Films

Journal of electronic materials, 2024-05, Vol.53 (7), p.3946-3955

2024

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Effect of substrate temperature on the plasma texturing process of c-Si wafers for black silicon solar cells

Physica status solidi. A, Applications and materials science, 2016-07, Vol.213 (7), p.1937-1941

2016

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A comparative study of wet and dry texturing processes of c-Si wafers for the fabrication of solar cells

Solar energy, 2014-03, Vol.101, p.182-191

2014

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Fabrication and characterization of a micro-fuel cell made of metallized PMMA

Journal of power sources, 2013-11, Vol.242, p.1-6

2013

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Black Silicon formation using dry etching for solar cells applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-09, Vol.177 (16), p.1509-1513

2012

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Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

Thin solid films, 2013-12, Vol.548, p.533-538

2013

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Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors

Journal of non-crystalline solids, 2012-09, Vol.358 (17), p.2336-2339

2012

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Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD

Journal of non-crystalline solids, 2012-09, Vol.358 (17), p.2099-2102

2012

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Study of polymorphous silicon as thermo-sensing film for infrared detectors

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-06, Vol.177 (10), p.756-761

2012

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Design of a Thermal Microsensor for Air Flow Ratewith Low Power Consumption and High Sensitivity

2022 IEEE Latin American Electron Devices Conference (LAEDC), 2022, p.1-4

2022

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Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

Applied surface science, 2010-03, Vol.256 (11), p.3386-3389

2010

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Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-07, Vol.22 (4), p.1513-1518

2004

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Study of the annealing effect in optical properties for phosphorus-doped a-Si x C 1− x :H films deposited by PECVD

Journal of physics. D, Applied physics, 2023-09, Vol.56 (39), p.395105

2023

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Design and simulation of a piezoelectric micropump for drug delivery systems

Microsystem technologies : sensors, actuators, systems integration, 2023-02, Vol.29 (2), p.253-264

2023

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Study of the annealing effect in optical properties for phosphorus-doped a-Si x C1− x :H films deposited by PECVD

Journal of physics. D, Applied physics, 2023-07, Vol.56 (39)

2023

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Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2003-03, Vol.21 (2), p.461-469

2003

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Prediction of trapping zones in an insulator-based dielectrophoretic device

Lab on a chip, 2009-01, Vol.9 (20), p.2896-2901

2009

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Proceso de grabado seco de silicio monocristalino para aplicaciones en guías de onda coplanares

Revista mexicana de física, 2010, Vol.56 (1), p.92-96

2010

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Refractive index of colored films of molybdenum trioxide

Journal of applied physics, 2000-07, Vol.88 (1), p.223-226

2000

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Optical and compositional properties of amorphous silicon-germanium films by plasma processing for integrated photonics

Optical materials express, 2012-04, Vol.2 (4), p.358-370

2012

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Stress Reduction of Amorphous Silicon Deposited by PECVD

MRS proceedings, 2016, Vol.1812 (1), p.109-116

2016

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Grabado anisotrópico de silicio para aplicación en micromaquinado usando plasmas de SF6/CH4/O2/Ar y SF6/CF4/O2/Ar

Revista mexicana de física, 2004, Vol.50 (2), p.203-207

2004

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Characterization of Residual Stress in a-SiC:H Deposited by RF-PECVD for Manufacturing of Membranes for Cell Culture

MRS proceedings, 2016, Vol.1812 (1), p.117-122

2016

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Refraction index and oscillator strength in MoO3 photocolored films

Physica. B, Condensed matter, 1999-11, Vol.271 (1-4), p.369-373

1999

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Effects of hydrogen dilution and B-doping on the density of Si-C bonds and properties of a-SixC1-x:H films

Superficies y vacío, 2016-06, Vol.29 (2), p.38-42

2016

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Tuning Electrical Properties and Achieving High TCR in P-Doped a-SixC1−x:H Films

Effect of substrate temperature on the plasma texturing process of c-Si wafers for black silicon solar cells

A comparative study of wet and dry texturing processes of c-Si wafers for the fabrication of solar cells

Fabrication and characterization of a micro-fuel cell made of metallized PMMA

Black Silicon formation using dry etching for solar cells applications

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors

Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD

Study of polymorphous silicon as thermo-sensing film for infrared detectors

Design of a Thermal Microsensor for Air Flow Ratewith Low Power Consumption and High Sensitivity

Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures

Study of the annealing effect in optical properties for phosphorus-doped a-Si x C 1− x :H films deposited by PECVD

Design and simulation of a piezoelectric micropump for drug delivery systems

Study of the annealing effect in optical properties for phosphorus-doped a-Si x C1− x :H films deposited by PECVD

Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures

Prediction of trapping zones in an insulator-based dielectrophoretic device

Proceso de grabado seco de silicio monocristalino para aplicaciones en guías de onda coplanares

Refractive index of colored films of molybdenum trioxide

Optical and compositional properties of amorphous silicon-germanium films by plasma processing for integrated photonics

Stress Reduction of Amorphous Silicon Deposited by PECVD

Grabado anisotrópico de silicio para aplicación en micromaquinado usando plasmas de SF6/CH4/O2/Ar y SF6/CF4/O2/Ar

Characterization of Residual Stress in a-SiC:H Deposited by RF-PECVD for Manufacturing of Membranes for Cell Culture

Refraction index and oscillator strength in MoO3 photocolored films

Effects of hydrogen dilution and B-doping on the density of Si-C bonds and properties of a-SixC1-x:H films

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