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Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells

Progress in photovoltaics, 2015-07, Vol.23 (7), p.874-882

2015

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Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns)

Progress in photovoltaics, 2016-10, Vol.24 (10), p.1332-1345

2016

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Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

Journal of physics. D, Applied physics, 2012-02, Vol.45 (4), p.045101-1-8

2012

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Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Advanced electronic materials, 2024-09, Vol.10 (9), p.n/a

2024

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Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Applied surface science, 2016-01, Vol.360, p.477-484

2016

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Handbook of Concentrator Photovoltaic Technology

Carlos Algora, Ignacio Rey-Stolle

1, 2016

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Application of photoreflectance to advanced multilayer structures for photovoltaics

Materials science & engineering. B, Solid-state materials for advanced technology, 2013-05, Vol.178 (9), p.599-608

2013

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Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells

Solar energy materials and solar cells, 2018-01, Vol.174, p.388-396

2018

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Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties

Journal of crystal growth, 2007, Vol.298, p.794-799

2007

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Analysis of the surface state of epi-ready Ge wafers

Applied surface science, 2012-08, Vol.258 (20), p.8166-8170

2012

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A 32.6% efficient lattice-matched dual-junction solar cell working at 1000 suns

Applied physics letters, 2009-02, Vol.94 (5)

2009

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10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells

Solar energy materials and solar cells, 2017-01, Vol.159, p.576-582

2017

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Influence of GaInP ordering on the electronic quality of concentrator solar cells

Journal of crystal growth, 2008-11, Vol.310 (23), p.5209-5213

2008

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MOVPE growth of GaP on Si with As initial coverage

Journal of crystal growth, 2017-04, Vol.464, p.8-13

2017

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The effect of Sb-surfactant on GaInP CuPt B type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

Physical chemistry chemical physics : PCCP, 2017-04, Vol.19 (15), p.9806-9810

2017

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Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)

Journal of crystal growth, 2011-01, Vol.315 (1), p.22-27

2011

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The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

Physical chemistry chemical physics : PCCP, 2017-04, Vol.19 (15), p.9806-9810

2017

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Advanced Germanium TPV Cells for Latent Heat Thermal Batteries

2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), 2023, p.1-1

2023

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Enhanced quantum efficiency of Ge solar cells by a two-dimensional photonic crystal nanostructured surface

Applied physics letters, 2009-05, Vol.94 (19), p.191102-191102-3

2009

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A 3-D model for concentrator solar cells based on distributed circuit units

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2552-2558

2005

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Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Journal of physics. D, Applied physics, 2013-11, Vol.46 (44)

2013

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Extended description of tunnel junctions for distributed modeling of concentrator multi-junction solar cells

Solar energy materials and solar cells, 2011-09, Vol.95 (9), p.2693-2697

2011

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A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate

Applied physics letters, 2008-04, Vol.92 (15)

2008

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A review of the promises and challenges of micro-concentrator photovoltaics

AIP Conference Proceedings, 2017, Vol.1881 (1)

2017

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Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates

Journal of materials science. Materials in electronics, 2014-01, Vol.25 (1), p.134-139

2014

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Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells

Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns)

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Handbook of Concentrator Photovoltaic Technology

Application of photoreflectance to advanced multilayer structures for photovoltaics

Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells

Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties

Analysis of the surface state of epi-ready Ge wafers

A 32.6% efficient lattice-matched dual-junction solar cell working at 1000 suns

10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells

Influence of GaInP ordering on the electronic quality of concentrator solar cells

MOVPE growth of GaP on Si with As initial coverage

The effect of Sb-surfactant on GaInP CuPt B type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)

The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging

Advanced Germanium TPV Cells for Latent Heat Thermal Batteries

Enhanced quantum efficiency of Ge solar cells by a two-dimensional photonic crystal nanostructured surface

A 3-D model for concentrator solar cells based on distributed circuit units

Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Extended description of tunnel junctions for distributed modeling of concentrator multi-junction solar cells

A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate

A review of the promises and challenges of micro-concentrator photovoltaics

Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates

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