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Heterostructures GexSi1-x/Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation

Thin solid films, 2004-11, Vol.466 (1-2), p.69-74

2004

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Dominating nucleation of misfit dislocations from the surface in GeSi/Si(0 0 1) films with a stepwise composition grown by means of molecular-beam epitaxy

Journal of crystal growth, 2006-08, Vol.293 (2), p.247-252

2006

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Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

Journal of applied physics, 2004-12, Vol.96 (12), p.7665-7674

2004

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Heterostructures Ge x Si 1− x /Si(0 0 1) grown by low-temperature (300–400 °C) molecular beam epitaxy: Misfit dislocation propagation

Journal of crystal growth, 2005, Vol.280 (1), p.309-319

2005

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Heterostructures GexSi1-x/Si(001) grown by low-temperature (300-400°C) molecular beam epitaxy : Misfit dislocation propagation

Journal of crystal growth, 2005-06, Vol.280 (1-2), p.309-319

2005

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Heterostructures Ge xSi 1− x/Si(001) ( x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation

Thin solid films, 2004, Vol.466 (1), p.69-74

2004

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Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

Thin solid films, 2001-07, Vol.392 (1), p.98-106

2001

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InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

Journal of crystal growth, 2003, Vol.247 (1), p.23-27

2003

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Diffraction method for structure investigations of semiconductor heterosystems using synchrotron variable wavelength

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2000-06, Vol.448 (1), p.282-285

2000

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Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1)

Journal of crystal growth, 1999-05, Vol.201, p.232-235

1999

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Influence of Al adsorption on In and Ga thermal desorption from InP and GaAs surfaces heated under As 4 flux

Thin solid films, 1997-09, Vol.306 (2), p.248-252

1997

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Influence of Al adsorption on In and Ga thermal desorption from InP and GaAs surfaces heated under As4 flux

Thin solid films, 1997-09, Vol.306 (2), p.248-252

1997

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Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4–1.8 eV interval of band gaps

Journal of crystal growth, 1996, Vol.158 (3), p.217-223

1996

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Study of the growth mechanism of modulated structures in the InAsGaAs system

Thin solid films, 1988-09, Vol.163, p.497-502

1988

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Selective Inhibition of STAT6 With Antisense Nucleotides Enhances Systemic Antitumor Effect of Hypofractionated Radiotherapy and Anti-PD1 in Metastatic Non-Small Cell Lung Cancer

International journal of radiation oncology, biology, physics, 2021-11, Vol.111 (3), p.e436-e437

2021

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Feasibility analysis of critical infrastructure information sharing in Virginia

2009 Systems and Information Engineering Design Symposium, 2009, p.165-170

2009

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POINT-CONTACT SPECTRA OF THE NONSUPERCONDUCTING COPPER-OXIDE CERAMICS: OBSERVATION OF MULTIPLE RESISTANCE PEAKS

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 1991-04, Vol.5 (8), p.607-611

1991

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Molecular Beam Epitaxy
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A1. Misfit Dislocations
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B1. Germanium Silicon Alloys
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Germanium
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Low Temperature Growth
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Heterostructures GexSi1-x/Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation

Dominating nucleation of misfit dislocations from the surface in GeSi/Si(0 0 1) films with a stepwise composition grown by means of molecular-beam epitaxy

Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

Heterostructures Ge x Si 1− x /Si(0 0 1) grown by low-temperature (300–400 °C) molecular beam epitaxy: Misfit dislocation propagation

Heterostructures GexSi1-x/Si(001) grown by low-temperature (300-400°C) molecular beam epitaxy : Misfit dislocation propagation

Heterostructures Ge xSi 1− x/Si(001) ( x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation

Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

Diffraction method for structure investigations of semiconductor heterosystems using synchrotron variable wavelength

Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1)

Influence of Al adsorption on In and Ga thermal desorption from InP and GaAs surfaces heated under As 4 flux

Influence of Al adsorption on In and Ga thermal desorption from InP and GaAs surfaces heated under As4 flux

Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4–1.8 eV interval of band gaps

Study of the growth mechanism of modulated structures in the InAsGaAs system

Selective Inhibition of STAT6 With Antisense Nucleotides Enhances Systemic Antitumor Effect of Hypofractionated Radiotherapy and Anti-PD1 in Metastatic Non-Small Cell Lung Cancer

Feasibility analysis of critical infrastructure information sharing in Virginia

POINT-CONTACT SPECTRA OF THE NONSUPERCONDUCTING COPPER-OXIDE CERAMICS: OBSERVATION OF MULTIPLE RESISTANCE PEAKS

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