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Excess Heat Capacity in Liquid Binary Alkali-Fluoride Mixtures

Inorganic chemistry, 2013-03, Vol.52 (5), p.2404-2411

2013

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CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

Applied physics letters, 1999-01, Vol.74 (4), p.498-500

1999

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Magnetic patterning of Fe ∕ Cr ∕ Fe ( 001 ) trilayers by Ga + ion irradiation

Journal of applied physics, 2005-11, Vol.98 (9), p.093503-093503-6

2005

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Epitaxy and magnetotransport properties of the diluted magnetic semiconductor p-Be(1−x)MnxTe

Applied physics letters, 2001-11, Vol.79 (19), p.3125-3127

2001

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BeCdSe as a ternary alloy for blue-green optoelectronic applications

Applied physics letters, 2001-01, Vol.78 (4), p.404-406

2001

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Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment

Applied physics letters, 1999-08, Vol.75 (9), p.1231-1233

1999

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Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes

Applied physics letters, 1999-10, Vol.75 (17), p.2626-2628

1999

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Synergistic effect of gentamicin plus ampicillin on enterococci with differing sensitivity to gentamicin:: A phenotypic assessment of NCCLS guidelines

Diagnostic microbiology and infectious disease, 1999-11, Vol.35 (3), p.219-225

1999

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CdSe monolayers, embedded in BeTe: analysis of interface vibrations by Raman spectroscopy

Applied surface science, 2001-05, Vol.175-176, p.169-174

2001

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MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells

Journal of crystal growth, 2000-06, Vol.214, p.109-114

2000

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Kinetics of Radiative Recombination in Strongly Excited ZnSe/BeTe Superlattices

physica status solidi (b), 2000-09, Vol.221 (1), p.523-527

2000

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Electronic band structure of quaternary Be-chalcogenides, studied by ultraviolet ellipsometry and photoreflectance spectroscopy

Journal of crystal growth, 2000-06, Vol.214, p.340-344

2000

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Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers

Semiconductors (Woodbury, N.Y.), 2001-11, Vol.35 (11), p.1340-1344

2001

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BeCdSe: A new material for the active region in devices operating in the blue-green region of the spectrum

Semiconductors (Woodbury, N.Y.), 2001-05, Vol.35 (5), p.520-524

2001

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BeTe–ZnSe type-II heterojunctions

Journal of crystal growth, 2000-06, Vol.214, p.316-320

2000

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Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

Journal of crystal growth, 1999-05, Vol.201, p.481-485

1999

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Optical characterization of MBE grown ZnSe-based QW laser heterostructures

Journal of crystal growth, 1999-05, Vol.201, p.946-949

1999

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Resonant inelastic soft x-ray scattering of Be chalcogenides

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (11), Article 115212

2006

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Blue-green ZnSe lasers with a new type of active region

Semiconductors (Woodbury, N.Y.), 1999-09, Vol.33 (9), p.1016-1020

1999

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BeCdSe/(Be,Zn)Se Quantum Well as a New Active Region for Blue-Green II-VI Lasers and Light-Emitting Diodes

Physica status solidi. A, Applied research, 2000-07, Vol.180 (1), p.275-280

2000

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Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

Semiconductors (Woodbury, N.Y.), 1998-10, Vol.32 (10), p.1137-1140

1998

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Degradation of NSe-free blue-green znse-based light emitting diodes with superlattice miniband hole transport

Physica status solidi. B. Basic research, 2002, Vol.229 (2), p.1019-1023

2002

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CdSe monolayers, embedded in BeTe : analysis of interface vibrations by Raman spectroscopy

Applied surface science, 2001, Vol.175-76, p.169-174

2001

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BeTe-ZnSe type-II heterojunctions

Journal of crystal growth, 2000, Vol.214-15, p.316-320

2000

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Electronic band structure of quaternary Be-chalcogenides, studied by ultraviolet ellipsometry and photoreflectance spectroscopy

Journal of crystal growth, 2000, Vol.214-15, p.340-344

2000

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Excess Heat Capacity in Liquid Binary Alkali-Fluoride Mixtures

CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

Magnetic patterning of Fe ∕ Cr ∕ Fe ( 001 ) trilayers by Ga + ion irradiation

Epitaxy and magnetotransport properties of the diluted magnetic semiconductor p-Be(1−x)MnxTe

BeCdSe as a ternary alloy for blue-green optoelectronic applications

Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment

Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes

Synergistic effect of gentamicin plus ampicillin on enterococci with differing sensitivity to gentamicin:: A phenotypic assessment of NCCLS guidelines

CdSe monolayers, embedded in BeTe: analysis of interface vibrations by Raman spectroscopy

MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells

Kinetics of Radiative Recombination in Strongly Excited ZnSe/BeTe Superlattices

Electronic band structure of quaternary Be-chalcogenides, studied by ultraviolet ellipsometry and photoreflectance spectroscopy

Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers

BeCdSe: A new material for the active region in devices operating in the blue-green region of the spectrum

BeTe–ZnSe type-II heterojunctions

Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

Optical characterization of MBE grown ZnSe-based QW laser heterostructures

Resonant inelastic soft x-ray scattering of Be chalcogenides

Blue-green ZnSe lasers with a new type of active region

BeCdSe/(Be,Zn)Se Quantum Well as a New Active Region for Blue-Green II-VI Lasers and Light-Emitting Diodes

Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

Degradation of NSe-free blue-green znse-based light emitting diodes with superlattice miniband hole transport

CdSe monolayers, embedded in BeTe : analysis of interface vibrations by Raman spectroscopy

BeTe-ZnSe type-II heterojunctions

Electronic band structure of quaternary Be-chalcogenides, studied by ultraviolet ellipsometry and photoreflectance spectroscopy

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