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A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1162-1167

2021

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The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Journal of applied physics, 2020-01, Vol.127 (2)

2020

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Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3497-3504, Article 3497

2021

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Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1924-1930

2022

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AEP unified power flow controller performance

IEEE transactions on power delivery, 1999-10, Vol.14 (4), p.1374-1381

1999

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Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Semiconductor science and technology, 2021-05, Vol.36 (5), p.55006

2021

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Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition

Materials science forum, 2020-07, Vol.1004, p.547-553

2020

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Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2022-03, Vol.1027, p.166330, Article 166330

2022

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High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition

Materials science forum, 2023-05, Vol.1090, p.147-151

2023

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Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment

Materials science forum, 2022-05, Vol.1062, p.190-194

2022

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A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium

Materials science forum, 2022-05, Vol.1062, p.523-527

2022

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Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design

Materials science forum, 2022-05, Vol.1062, p.504-508

2022

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The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO2

Materials science forum, 2022-05, Vol.1062, p.325-329

2022

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The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

Materials science in semiconductor processing, 2021-02, Vol.122, p.105527, Article 105527

2021

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Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET

Materials science forum, 2020-07, Vol.1004, p.808-813

2020

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Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

Materials science forum, 2019-07, Vol.963, p.511-515

2019

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Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars

Materials science forum, 2019-07, Vol.963, p.539-543

2019

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A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, p.251-254

2021

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Unbalanced GSU Transformer Configuration at Rockport Plant - Analysis and Operating Experience

IEEE transactions on energy conversion, 1987-12, Vol.EC-2 (4), p.577-585

1987

Volltextzugriff (PDF)

A sampling plan to test single phase in service watthour meters

IEEE transactions on power apparatus and systems, 1977-01, Vol.96 (1), p.307-311

1977

Volltextzugriff (PDF)

An Improved Technique to Measure Transmission System Switching Surge Phenomena

IEEE transactions on power apparatus and systems, 1973-11, Vol.PAS-92 (6), p.1987-1991

1973

Volltextzugriff (PDF)

An Ultrafast Fault Sensor for a Fault Current Limiting Device

IEEE transactions on power apparatus and systems, 1979-05, Vol.PAS-98 (3), p.1069-1079

1979

Volltextzugriff (PDF)

Unbalanced GSU Transformer Configuration at Rockport Plant???Analysis and Operating Experience

IEEE power engineering review, 1987-12, Vol.PER-7 (12), p.32-33

1987

Volltextzugriff (PDF)

An Ultrafast Fault Sensor for a Fault Current Limiting Device

IEEE power engineering review, 1981-07, Vol.PER-1 (7), p.14-24

1981

Volltextzugriff (PDF)

Hypothermic Machine Preservation in Human Liver Transplantation: The First Clinical Series

American journal of transplantation, 2010-02, Vol.10 (2), p.372-381

2010

Volltextzugriff (PDF)

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A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

AEP unified power flow controller performance

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition

Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy

High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition

Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment

A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium

Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design

The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO2

The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars

A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices

Unbalanced GSU Transformer Configuration at Rockport Plant - Analysis and Operating Experience

A sampling plan to test single phase in service watthour meters

An Improved Technique to Measure Transmission System Switching Surge Phenomena

An Ultrafast Fault Sensor for a Fault Current Limiting Device

Unbalanced GSU Transformer Configuration at Rockport Plant???Analysis and Operating Experience

An Ultrafast Fault Sensor for a Fault Current Limiting Device

Hypothermic Machine Preservation in Human Liver Transplantation: The First Clinical Series

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